| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MJD122I | NPN Silicon Darlington Transistor FEATURES • High DC Current Gain • Electrically Similar to Popular TIP122 • Built-in a Damper Diode at E-C We declare that the material of product compliance with RoHS requirements. | FS | ||
MJD122I | 100V,8A,General Purpose NPN Bipolar Transistor | GALAXY 银河微电 | ||
SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT Designed for general purpose amplifier and low speed switching applications. • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“–1” Suffix) • Lead Formed Version Available in 16 mm Tape and Reel (“T4” Suffix) • Sur | MOTOROLA 摩托罗拉 | |||
COMPLEMENTARY SILICON POWER DARLINGTONS Complementary Power Darlingtons For Isolated Package Applications Designed for general–purpose amplifiers and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis. • Electrically Similar to the Popular TIP122 and T | MOTOROLA 摩托罗拉 | |||
POWER TRANSISTORS(5.0A,60-100V,65W) ... designed for general−purpose amplifier and low−speed switching applications. FEATURES: • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 V (Min) − TIP120, TIP125 = 80 V (Min) − TIP121, TIP126 = 100 V (Min) − TIP122, TIP127 • Low Coll | MOSPEC 统懋 | |||
Precision Timers 文件:281.35 Kbytes Page:14 Pages | NSC 国半 | |||
Precision Timers 文件:281.35 Kbytes Page:14 Pages | NSC 国半 |
MJD122I产品属性
- 类型
描述
- AEC Qualified:
NO
- Pb Free:
YES
- Halide free:
YES
- Reach:
YES
- RoHS:
YES
- Marketing Status:
Active
- Polarity:
NPN
- V(BR)CEO(V)min.:
100
- IC(A):
8
- hFEmin.:
1000
- hFEmax.:
12000
- VCE (sat)(V):
4
- IB(mA):
80
- PD(W)max.:
20
- TJ(°C)max.:
150
- TJ(°C)min.:
-55
- ECCN(US):
EAR99
- Category:
双极型晶体管
MJD122I规格书下载地址
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