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MJD122I

NPN Silicon Darlington Transistor

FEATURES • High DC Current Gain • Electrically Similar to Popular TIP122 • Built-in a Damper Diode at E-C We declare that the material of product compliance with RoHS requirements.

FS

MJD122I

100V,8A,General Purpose NPN Bipolar Transistor

GALAXY

银河微电

SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT

Designed for general purpose amplifier and low speed switching applications. • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“–1” Suffix) • Lead Formed Version Available in 16 mm Tape and Reel (“T4” Suffix) • Sur

MOTOROLA

摩托罗拉

COMPLEMENTARY SILICON POWER DARLINGTONS

Complementary Power Darlingtons For Isolated Package Applications Designed for general–purpose amplifiers and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis. • Electrically Similar to the Popular TIP122 and T

MOTOROLA

摩托罗拉

POWER TRANSISTORS(5.0A,60-100V,65W)

... designed for general−purpose amplifier and low−speed switching applications. FEATURES: • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 V (Min) − TIP120, TIP125 = 80 V (Min) − TIP121, TIP126 = 100 V (Min) − TIP122, TIP127 • Low Coll

MOSPEC

统懋

Precision Timers

文件:281.35 Kbytes Page:14 Pages

NSC

国半

Precision Timers

文件:281.35 Kbytes Page:14 Pages

NSC

国半

MJD122I产品属性

  • 类型

    描述

  • AEC Qualified:

    NO

  • Pb Free:

    YES

  • Halide free:

    YES

  • Reach:

    YES

  • RoHS:

    YES

  • Marketing Status:

    Active

  • Polarity:

    NPN

  • V(BR)CEO(V)min.:

    100

  • IC(A):

    8

  • hFEmin.:

    1000

  • hFEmax.:

    12000

  • VCE (sat)(V):

    4

  • IB(mA):

    80

  • PD(W)max.:

    20

  • TJ(°C)max.:

    150

  • TJ(°C)min.:

    -55

  • ECCN(US):

    EAR99

  • Category:

    双极型晶体管

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