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MJD128价格
参考价格：￥1.4626
型号：MJD128T4G 品牌：ON 备注：这里有MJD128多少钱，2025年最近7天走势，今日出价，今日竞价，MJD128批发/采购报价，MJD128行情走势销售排行榜，MJD128报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MJD128 | Complementary Darlington Power Transistor Complementary Darlington Power Transistor DPAK For Surface Mount Applications Features Designed for general purpose amplifier and low speed switching applications. • Monolithic Construction With Built−in Base−Emitter Shunt Resistors • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • | ONSEMI 安森美半导体 |   | |
MJD128 | isc Silicon PNP Darlington Power Transistor DESCRIPTION • High DC Current Gain- : hFE = 1000(Min)@ IC= -4A • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -120V(Min) • DPAK for Surface Mount Applications • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for general purpo | ISC 无锡固电 | | |
MJD128 | Silicon PNP Power Transistor DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= -4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -120V(Min) APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. | ISC 无锡固电 | | |
MJD128 | 8.0 A，120 V，PNP 达林顿双极功率晶体管 | ONSEMI 安森美半导体 | | |
Complementary Darlington Power Transistor Complementary Darlington Power Transistor DPAK For Surface Mount Applications Features Designed for general purpose amplifier and low speed switching applications. • Monolithic Construction With Built−in Base−Emitter Shunt Resistors • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • | ONSEMI 安森美半导体 | | ||
Complementary Darlington Power Transistor Complementary Darlington Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Monolithic Construction With Built−in Base−Emitter Shunt Resistors • High DC Current Gain: hFE = 2500 (Typ) @ IC = 4.0 Adc • E | ONSEMI 安森美半导体 | | ||
TRANS PNP DARL 120V 8A DPAK | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：托盘 描述：TRANS PNP DARL 120V 8A DPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：剪切带（CT）带盒（TB） 描述：TRANS PNP DARL 120V 8A DPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | ||
Complementary Darlington Power Transistor 文件：185.04 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
Complementary Darlington Power Transistor 文件：185.04 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
Customer Specification Construction Diameters (In) 1) Component 1 8 X 1 COND a) Conductor 24 (7/32) AWG Bare Copper 0.024 b) Insulation 0.010 Wall, Nom. PVC, Semi Rigid 0.044 (1) Color(s) Cond Color Cond Color Cond Color 1 WHITE 4 YELLOW 7 BLUE 2 BROWN 5 SLATE 8 RED 3 GREEN 6 PINK 2) Cable Assembly 8 Component | ALPHAWIRE | | ||
Temperature Sensors Line Guide 文件：736.09 Kbytes Page：11 Pages | Honeywell 霍尼韦尔 | | ||
Ultra High Frequency Transistor Arrays 文件：298.68 Kbytes Page：13 Pages | Intersil | | ||
Wiha Insulated 1/4 Sockets & Sets 文件：259.62 Kbytes Page：1 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Wiha Quality Tools Toll Free: (800) 494-6104 文件：256.26 Kbytes Page：1 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |
MJD128产品属性
- 类型
描述
- 型号
MJD128
- 制造商
ONSEMI
- 制造商全称
ON Semiconductor
- 功能描述
Complementary Darlington Power Transistor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
24+ |
TO-252 |
2669 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
ON/安森美 |
24+ |
NA/ |
5750 |
原装现货,当天可交货,原型号开票 |
|||
安森美 |
2108+ |
DPAK |
7500 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ON/安森美 |
22+ |
TO-252 |
100000 |
代理渠道/只做原装/可含税 |
|||
ONSEMI/安森美 |
24+ |
NA |
990000 |
明嘉莱只做原装正品现货 |
|||
ON |
24+ |
DPAK-3 |
25000 |
ON全系列可订货 |
|||
三年内 |
1983 |
只做原装正品 |
|||||
ON(安森美) |
23+ |
标准封装 |
5000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
|||
ONS |
23+ |
DPAK |
4200 |
绝对全新原装!优势供货渠道!特价!请放心订购! |
|||
安森美 |
24+ |
DPAK |
18000 |
原装正品 有挂有货 假一赔十 |
MJD128规格书下载地址
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