Complementary Darlington Power Transistor

Complementary Darlington Power Transistor DPAK For Surface Mount Applications Features Designed for general purpose amplifier and low speed switching applications. • Monolithic Construction With Built−in Base−Emitter Shunt Resistors • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc •

isc Silicon PNP Darlington Power Transistor

DESCRIPTION • High DC Current Gain- : hFE = 1000(Min)@ IC= -4A • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -120V(Min) • DPAK for Surface Mount Applications • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for general purpo

Silicon PNP Power Transistor

DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= -4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -120V(Min) APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.

8.0 A，120 V，PNP 达林顿双极功率晶体管

The PNP Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. • NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable\n• These are PbFree Devices;

Complementary Darlington Power Transistor

Complementary Darlington Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Monolithic Construction With Built−in Base−Emitter Shunt Resistors • High DC Current Gain: hFE = 2500 (Typ) @ IC = 4.0 Adc • E

Complementary Darlington Power Transistor

Complementary Darlington Power Transistor DPAK For Surface Mount Applications Features Designed for general purpose amplifier and low speed switching applications. • Monolithic Construction With Built−in Base−Emitter Shunt Resistors • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc •

TRANS PNP DARL 120V 8A DPAK

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：托盘 描述：TRANS PNP DARL 120V 8A DPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Complementary Darlington Power Transistor

文件：185.04 Kbytes Page：6 Pages

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：剪切带（CT）带盒（TB） 描述：TRANS PNP DARL 120V 8A DPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Complementary Darlington Power Transistor

文件：185.04 Kbytes Page：6 Pages

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope, intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi

Silicon Complementary Transistors Audio Output, Video, Driver

Description: The NTE128 (NPN) and NTE129 (PNP) are silicon complementary transistors in a TO39 type package designed primarily for amplifier and switching applications. These devices features high breakdown voltages, low leakage currents, low capacity, and a beta useful over an extremely wide c

Silicon Complementary Transistors General Purpose Amp

Description: The NTE128P (NPN) and NTE129P (PNP) are silicon complemedntary transistors designed for use in general purpose power amplifier and switching applications. Features: • High VCE Ratings • Exceptional Power Dissipation Capability

Silicon epitaxial planar type

文件：49.24 Kbytes Page：2 Pages