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MJD112晶体管资料

MJD112别名：MJD112三极管、MJD112晶体管、MJD112晶体三极管
MJD112生产厂家：韩国三星公司
MJD112制作材料：Darl
MJD112性质：低频或音频放大（LF）
MJD112封装形式：贴片封装
MJD112极限工作电压：
MJD112最大电流允许值：2A
MJD112最大工作频率：<1MHZ或未知
MJD112引脚数：3
MJD112最大耗散功率：20W
MJD112放大倍数：
MJD112图片代号：G-217
MJD112vtest：0
MJD112htest：999900
MJD112atest：2
MJD112wtest：20

MJD112代换 MJD112用什么型号代替：

MJD112价格

参考价格：￥1.1038

型号：MJD112-1G 品牌：ONSemi 备注：这里有MJD112多少钱，2026年最近7天走势，今日出价，今日竞价，MJD112批发/采购报价，MJD112行情走势销售排行榜，MJD112报价。

型号	功能描述	生产厂家企业	LOGO
MJD112	Complementary Darlington Power Transistors Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Applications	ONSEMI 安森美半导体	ONSEMI
MJD112	SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. • Lead Formed for Surface Mount Applications in Plastic	Motorola 摩托罗拉	Motorola
MJD112	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Application ■ Lin	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
MJD112	EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.) MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. FEATURES • High DC Current Gain. : hFE=1000(Min.), VCE=4V, IC=1A. • Low Collector-Emitter Saturation Voltage. • Straight Lead (IPAK, L Suffix) • Complementary to MJD117/L.	KEC KEC(Korea Electronics)	KEC
MJD112	D-PAK for Surface Mount Applications Features • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications (No Suffix)	Fairchild 仙童半导体	Fairchild
MJD112	TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR Description Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and amplifiers.	DCCOM 道全	DCCOM
MJD112	TO-251/TO-252-2 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES ● Complementary darlington power transistors dpak for surface mount applications	WINNERJOIN 永而佳	WINNERJOIN
MJD112	isc Silicon NPN Darlington Power Transistor DESCRIPTION • High DC current gain • Lead formed for surface mount applications(NO suffix) • Straight lead(IPAK,“ －I” suffix) • Built-in a damper diode at E-C • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Desi	ISC 无锡固电	ISC
MJD112	Silicon NPN epitaxial planer Transistors Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant(P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • High DC Current Gain • Built-in a damper diode	MCC	MCC
MJD112	COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS Designed for General Purpose Power and Switching Applications	CDIL	CDIL
MJD112	TRANSISTOR (NPN) FEATURES • Complementary Darlington Power Transistors Dpak for Surface Mount Applications	FS	FS
MJD112	Silicon NPN transistor in a TO-252 Plastic Package. Descriptions Silicon NPN transistor in a TO-252 Plastic Package. Features High DC current gain, built-in a damper diode at E-C,electrically similar to popular TIP112. Applications Medium power switching applications.	FOSHAN 蓝箭电子	FOSHAN
MJD112	Complementary Darlington Power Transistors Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (	ONSEMI 安森美半导体	ONSEMI
MJD112	Silicon NPN Power Transistor DESCRIPTION ·High DC current gain ·Lead formed for surface mount applications ·Built-in a damper diode at E-C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.	ISC 无锡固电	ISC
MJD112	Silicon NPN Power Transistor DESCRIPTION ·High DC current gain ·Lead formed for surface mount applications ·Built-in a damper diode at E-C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.	ISC 无锡固电	ISC
MJD112	Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“−	ONSEMI 安森美半导体	ONSEMI
MJD112	中等功率双极型晶体管	MCC	MCC
MJD112	达林顿管	JSCJ 长晶科技	JSCJ
MJD112	互补硅功率达林顿晶体管	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
MJD112	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS 文件：204.34 Kbytes Page：1 Pages	TGS	TGS
MJD112	Silicon NPN epitaxial planer Transistors 文件：295.08 Kbytes Page：3 Pages	MCC	MCC
MJD112	TRANSISTOR (NPN) 文件：1.54779 Mbytes Page：3 Pages	JIANGSU 长电科技	JIANGSU
MJD112	isc Silicon NPN Darlington Power Transistor 文件：384.71 Kbytes Page：3 Pages	ISC 无锡固电	ISC
MJD112	Complementary Darlington Power Transistors 文件：153.95 Kbytes Page：10 Pages	ONSEMI 安森美半导体	ONSEMI
MJD112	Complementary power Darlington transistors 文件：388.17 Kbytes Page：10 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
MJD112	Complementary Darlington Power Transistors 文件：144.73 Kbytes Page：8 Pages	ONSEMI 安森美半导体	ONSEMI
MJD112	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS 文件：250.7 Kbytes Page：6 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
MJD112	NPN Silicon Darlington Transistor 文件：153.45 Kbytes Page：5 Pages	Fairchild 仙童半导体	Fairchild
MJD112	Complementary Darlington Power Transistors 文件：101.63 Kbytes Page：8 Pages	ONSEMI 安森美半导体	ONSEMI
MJD112_V01	Complementary Darlington Power Transistors Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (	ONSEMI 安森美半导体	ONSEMI
MJD112_V02	Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“−	ONSEMI 安森美半导体	ONSEMI
MJD112-001	Complementary Darlington Power Transistors Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Applications	ONSEMI 安森美半导体	ONSEMI
MJD1121	SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. • Lead Formed for Surface Mount Applications in Plastic	Motorola 摩托罗拉	Motorola
MJD112-1G	Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“−	ONSEMI 安森美半导体	ONSEMI
MJD112-1G	Complementary Darlington Power Transistors Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (	ONSEMI 安森美半导体	ONSEMI
MJD112-251	Silicon NPN Power Transistor DESCRIPTION ·High DC current gain ·Lead formed for surface mount applications ·Built-in a damper diode at E-C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.	ISC 无锡固电	ISC
MJD112-252	Silicon NPN Power Transistor DESCRIPTION ·High DC current gain ·Lead formed for surface mount applications ·Built-in a damper diode at E-C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.	ISC 无锡固电	ISC
MJD112G	Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“−	ONSEMI 安森美半导体	ONSEMI
MJD112G	Complementary Darlington Power Transistors Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (	ONSEMI 安森美半导体	ONSEMI
MJD112L	EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.) MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. FEATURES • High DC Current Gain. : hFE=1000(Min.), VCE=4V, IC=1A. • Low Collector-Emitter Saturation Voltage. • Straight Lead (IPAK, L Suffix) • Complementary to MJD117/L.	KEC KEC(Korea Electronics)	KEC
MJD112NPN	COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS Designed for General Purpose Power and Switching Applications	CDIL	CDIL
MJD112RL	Complementary Darlington Power Transistors Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Applications	ONSEMI 安森美半导体	ONSEMI
MJD112RLG	Complementary Darlington Power Transistors Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (	ONSEMI 安森美半导体	ONSEMI
MJD112RLG	Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“−	ONSEMI 安森美半导体	ONSEMI
MJD112T4	Complementary Darlington Power Transistors Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Applications	ONSEMI 安森美半导体	ONSEMI
MJD112T4	SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. • Lead Formed for Surface Mount Applications in Plastic	Motorola 摩托罗拉	Motorola
MJD112T4G	Complementary Darlington Power Transistors Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Applications	ONSEMI 安森美半导体	ONSEMI
MJD112T4G	Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“−	ONSEMI 安森美半导体	ONSEMI
MJD112T4G	Complementary Darlington Power Transistors Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (	ONSEMI 安森美半导体	ONSEMI
MJD112_03	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS 文件：250.7 Kbytes Page：6 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
MJD112_06	NPN Silicon Darlington Transistor 文件：153.45 Kbytes Page：5 Pages	Fairchild 仙童半导体	Fairchild
MJD112_06	Complementary Darlington Power Transistors 文件：101.63 Kbytes Page：8 Pages	ONSEMI 安森美半导体	ONSEMI
MJD112_10	Complementary power Darlington transistors 文件：388.17 Kbytes Page：10 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
MJD112_11	Complementary Darlington Power Transistors 文件：144.73 Kbytes Page：8 Pages	ONSEMI 安森美半导体	ONSEMI
MJD112_16	Silicon NPN epitaxial planer Transistors 文件：295.08 Kbytes Page：3 Pages	MCC	MCC
MJD112_17	isc Silicon NPN Darlington Power Transistor 文件：384.71 Kbytes Page：3 Pages	ISC 无锡固电	ISC
MJD112-001	Complementary Darlington Power Transistors 文件：101.63 Kbytes Page：8 Pages	ONSEMI 安森美半导体	ONSEMI
MJD112-1G	Complementary Darlington Power Transistors 文件：101.63 Kbytes Page：8 Pages	ONSEMI 安森美半导体	ONSEMI
MJD112-1G	封装/外壳：TO-251-3 短引线，IPak，TO-251AA 包装：管件描述：TRANS NPN DARL 100V 2A IPAK 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	ONSEMI 安森美半导体	ONSEMI
MJD112G	封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带描述：TRANS NPN DARL 100V 2A DPAK 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	ONSEMI 安森美半导体	ONSEMI

MJD112产品属性

类型
描述
型号
MJD112
功能描述
达林顿晶体管 2A 100V Bipolar
RoHS
否
制造商
Texas Instruments
配置
Octal
晶体管极性
NPN 集电极—发射极最大电压
VCEO
50 V 发射极 - 基极电压
VEBO
集电极—基极电压
最大直流电集电极电流
0.5 A
最大工作温度
+ 150 C
安装风格
SMD/SMT
封装/箱体
SOIC-18
封装
Reel

MJD112供应商更多...

更新时间：2026-1-1 16:02:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市东来宝电子科技有限公司	MJD112T4G	ON	24+	TO252	97500	郑重承诺只做原装进口现货	询价
深圳市得捷芯城科技有限公司	MJD112T4G	ON(安森美)	24+	TO-252-2(DPAK)	10048	原厂可订货,技术支持,直接渠道。可签保供合同	询价
海芯未来半导体电子（深圳）有限公司	MJD112T4G	ON	24+	DPAK	14950		询价
深圳市中联芯电子有限公司	MJD112T4	ST	24+	TO-252	15000	只做原装有挂有货假一赔十	询价
中天科工半导体（深圳）有限公司	MJD112TF	FAIRCHILD/仙童	25+	TO-252	32000	FAIRCHILD/仙童全新特价MJD112TF即刻询购立享优惠#长期有货	询价
深圳市赛尔通科技有限公司	MJD112G	ON	23+	DPAK	56000		询价
深圳市金芯阳科技有限公司	MJD112T4G	ON	15+	原厂原装	40000	进口原装现货假一赔十	询价
深圳市讯顺达科技有限公司	MJD112T4G	ON	21+	TO252	1472	全新原装公司现货	询价
深圳市南科功率半导体有限公司	MJD112T4G	NK/南科功率	2025	TO-252	3200	国产南科	询价
深圳市河锋鑫科技有限公司	MJD112T4	ST/意法	17+	TO252DPAK	31518	原装正品可含税交易	询价

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MJD32CT4G，全新.当天发货或门市自取，如需了解更多产品信息联系我们.零七五五.八二七三二二九一企鹅:一一七四零五二三五三，V:八七六八零五五八.
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MJD112晶体管资料

MJD112价格

MJD112产品属性

MJD112供应商更多...

MJD112芯片相关品牌

MJD112规格书下载地址

MJD112参数引脚图相关

MJD112数据表相关新闻

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MIXA30W1200TED IGBT 模块

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MJD127T4 ON原厂授权经销商

MJ11016

mjd31ct4g亚太地区代理商，绝对优势！！

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