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位置：首页 > IC中文资料 > MJD112

MJD112晶体管资料

  • MJD112别名：MJD112三极管、MJD112晶体管、MJD112晶体三极管

  • MJD112生产厂家：韩国三星公司

  • MJD112制作材料：Darl

  • MJD112性质：低频或音频放大 （LF）

  • MJD112封装形式：贴片封装

  • MJD112极限工作电压：

  • MJD112最大电流允许值：2A

  • MJD112最大工作频率：<1MHZ或未知

  • MJD112引脚数：3

  • MJD112最大耗散功率：20W

  • MJD112放大倍数：

  • MJD112图片代号：G-217

  • MJD112vtest：0

  • MJD112htest：999900

  • MJD112atest：2

  • MJD112wtest：20

  • MJD112代换 MJD112用什么型号代替：

MJD112价格

参考价格：￥1.1038

型号：MJD112-1G 品牌：ONSemi 备注：这里有MJD112多少钱，2026年最近7天走势，今日出价，今日竞价，MJD112批发/采购报价，MJD112行情走势销售排行榜，MJD112报价。
型号 功能描述 生产厂家 企业 LOGO 操作
MJD112

SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS

Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. • Lead Formed for Surface Mount Applications in Plastic

MOTOROLA

摩托罗拉

MJD112

Complementary Darlington Power Transistors

Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Applications

ONSEMI

安森美半导体

MJD112

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Application ■ Lin

STMICROELECTRONICS

意法半导体

MJD112

EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)

MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. FEATURES • High DC Current Gain. : hFE=1000(Min.), VCE=4V, IC=1A. • Low Collector-Emitter Saturation Voltage. • Straight Lead (IPAK, L Suffix) • Complementary to MJD117/L.

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

MJD112

D-PAK for Surface Mount Applications

Features • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications (No Suffix)

FAIRCHILD

仙童半导体

MJD112

TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR

Description Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and amplifiers.

DCCOM

道全

MJD112

TO-251/TO-252-2 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Complementary darlington power transistors dpak for surface mount applications

WINNERJOIN

永而佳

MJD112

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • High DC current gain • Lead formed for surface mount applications(NO suffix) • Straight lead(IPAK,“ －I” suffix) • Built-in a damper diode at E-C • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Desi

ISC

无锡固电

MJD112

Silicon NPN epitaxial planer Transistors

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant(P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • High DC Current Gain • Built-in a damper diode

MCC

MJD112

COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS

COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS Designed for General Purpose Power and Switching Applications

CDIL

MJD112

TRANSISTOR (NPN)

FEATURES • Complementary Darlington Power Transistors Dpak for Surface Mount Applications

FS

MJD112

Silicon NPN transistor in a TO-252 Plastic Package.

Descriptions Silicon NPN transistor in a TO-252 Plastic Package. Features High DC current gain, built-in a damper diode at E-C,electrically similar to popular TIP112. Applications Medium power switching applications.

FOSHAN

蓝箭电子

MJD112

Complementary Darlington Power Transistors

Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (

ONSEMI

安森美半导体

MJD112

Silicon NPN Power Transistor

DESCRIPTION ·High DC current gain ·Lead formed for surface mount applications ·Built-in a damper diode at E-C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.

ISC

无锡固电

MJD112

Silicon NPN Power Transistor

DESCRIPTION ·High DC current gain ·Lead formed for surface mount applications ·Built-in a damper diode at E-C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.

ISC

无锡固电

MJD112

Complementary Darlington Power Transistors DPAK For Surface Mount Applications

Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“−

ONSEMI

安森美半导体

MJD112

互补硅功率达林顿晶体管

The devices are manufactured in planar technology with \\\"base island\\\" layout and monolithic Darlington configuration. • Good hFE linearity \n• Monolithic Darlington configuration with integrated antiparallel collector-emitter diode \n• High fT frequency;

STMICROELECTRONICS

意法半导体

MJD112

中等功率双极型晶体管

MCC

MJD112

达林顿管

JSCJ

长晶科技

MJD112

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

文件：204.34 Kbytes Page：1 Pages

TGS

MJD112

Silicon NPN epitaxial planer Transistors

文件：295.08 Kbytes Page：3 Pages

MCC

MJD112

TRANSISTOR (NPN)

文件：1.54779 Mbytes Page：3 Pages

JIANGSU

长电科技

MJD112

isc Silicon NPN Darlington Power Transistor

文件：384.71 Kbytes Page：3 Pages

ISC

无锡固电

MJD112

Complementary Darlington Power Transistors

文件：153.95 Kbytes Page：10 Pages

ONSEMI

安森美半导体

MJD112

Complementary Darlington Power Transistors

文件：144.73 Kbytes Page：8 Pages

ONSEMI

安森美半导体

MJD112

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

文件：250.7 Kbytes Page：6 Pages

STMICROELECTRONICS

意法半导体

MJD112

Complementary power Darlington transistors

文件：388.17 Kbytes Page：10 Pages

STMICROELECTRONICS

意法半导体

MJD112

NPN Silicon Darlington Transistor

文件：153.45 Kbytes Page：5 Pages

FAIRCHILD

仙童半导体

MJD112

Complementary Darlington Power Transistors

文件：101.63 Kbytes Page：8 Pages

ONSEMI

安森美半导体

MJD112_V01

Complementary Darlington Power Transistors

Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (

ONSEMI

安森美半导体

MJD112_V02

Complementary Darlington Power Transistors DPAK For Surface Mount Applications

Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“−

ONSEMI

安森美半导体

MJD112-001

Complementary Darlington Power Transistors

Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Applications

ONSEMI

安森美半导体

MJD1121

SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS

Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. • Lead Formed for Surface Mount Applications in Plastic

MOTOROLA

摩托罗拉

MJD112-1G

Complementary Darlington Power Transistors DPAK For Surface Mount Applications

Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“−

ONSEMI

安森美半导体

MJD112-1G

Complementary Darlington Power Transistors

Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (

ONSEMI

安森美半导体

MJD112-251

Silicon NPN Power Transistor

DESCRIPTION ·High DC current gain ·Lead formed for surface mount applications ·Built-in a damper diode at E-C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.

ISC

无锡固电

MJD112-252

Silicon NPN Power Transistor

DESCRIPTION ·High DC current gain ·Lead formed for surface mount applications ·Built-in a damper diode at E-C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.

ISC

无锡固电

MJD112G

Complementary Darlington Power Transistors DPAK For Surface Mount Applications

Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“−

ONSEMI

安森美半导体

MJD112G

Complementary Darlington Power Transistors

Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (

ONSEMI

安森美半导体

MJD112L

EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)

MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. FEATURES • High DC Current Gain. : hFE=1000(Min.), VCE=4V, IC=1A. • Low Collector-Emitter Saturation Voltage. • Straight Lead (IPAK, L Suffix) • Complementary to MJD117/L.

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

MJD112NPN

COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS

COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS Designed for General Purpose Power and Switching Applications

CDIL

MJD112RL

Complementary Darlington Power Transistors

Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Applications

ONSEMI

安森美半导体

MJD112RLG

Complementary Darlington Power Transistors

Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (

ONSEMI

安森美半导体

MJD112RLG

Complementary Darlington Power Transistors DPAK For Surface Mount Applications

Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“−

ONSEMI

安森美半导体

MJD112T4

Complementary Darlington Power Transistors

Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Applications

ONSEMI

安森美半导体

MJD112T4

SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS

Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. • Lead Formed for Surface Mount Applications in Plastic

MOTOROLA

摩托罗拉

MJD112T4G

Complementary Darlington Power Transistors

Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Applications

ONSEMI

安森美半导体

MJD112T4G

Complementary Darlington Power Transistors DPAK For Surface Mount Applications

Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“−

ONSEMI

安森美半导体

MJD112T4G

Complementary Darlington Power Transistors

Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (

ONSEMI

安森美半导体

MJD112_03

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

文件：250.7 Kbytes Page：6 Pages

STMICROELECTRONICS

意法半导体

MJD112_06

NPN Silicon Darlington Transistor

文件：153.45 Kbytes Page：5 Pages

FAIRCHILD

仙童半导体

MJD112_06

Complementary Darlington Power Transistors

文件：101.63 Kbytes Page：8 Pages

ONSEMI

安森美半导体

MJD112_10

Complementary power Darlington transistors

文件：388.17 Kbytes Page：10 Pages

STMICROELECTRONICS

意法半导体

MJD112_11

Complementary Darlington Power Transistors

文件：144.73 Kbytes Page：8 Pages

ONSEMI

安森美半导体

MJD112_16

Silicon NPN epitaxial planer Transistors

文件：295.08 Kbytes Page：3 Pages

MCC

MJD112_17

isc Silicon NPN Darlington Power Transistor

文件：384.71 Kbytes Page：3 Pages

ISC

无锡固电

MJD112-001

Complementary Darlington Power Transistors

文件：101.63 Kbytes Page：8 Pages

ONSEMI

安森美半导体

MJD112-1G

Complementary Darlington Power Transistors

文件：101.63 Kbytes Page：8 Pages

ONSEMI

安森美半导体

MJD112-1G

封装/外壳：TO-251-3 短引线，IPak，TO-251AA 包装：管件 描述：TRANS NPN DARL 100V 2A IPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

ONSEMI

安森美半导体

MJD112G

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN DARL 100V 2A DPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

ONSEMI

安森美半导体

MJD112产品属性

  • 类型

    描述

  • Pb-free：

    Pb

  • AEC Qualified：

    A

  • Halide free：

    H

  • PPAP Capablee：

    P

  • Status：

    Active

  • Polarity：

    NPN

  • IC Continuous (A)：

    2

  • V(BR)CEO Min (V)：

    100

  • VCE(sat) Max (V)：

    2

  • hFE Min (k)：

    1

  • hFE Max (k)：

    12

  • fT Min (MHz)：

    25

  • Package Type：

    DPAK INSERTION MOUNT

MJD112供应商更多...

更新时间：2026-5-13 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市高捷芯城科技有限公司
MJD112G
onsemi(安森美)
24+
TO-252
959
原厂订货渠道,支持BOM配单一站式服务
询价
中天科工半导体（深圳）有限公司
MJD112TF
FAIRCHILD/仙童
25+
TO-252
32000
FAIRCHILD/仙童全新特价MJD112TF即刻询购立享优惠#长期有货
询价
深圳市科恒伟业电子有限公司
MJD112T4
ST/意法
2450+
TO-252
9850
只做原装正品现货或订货假一赔十!
询价
标准国际(香港)有限公司
MJD112-1G
ONSEMI
25+
NA
12050
全新原装!优势库存热卖中!
询价
深圳市星宇佳科技有限公司
MJD112-1G
ONSEMI/安森美
07+
TO-251
13
原装进口无铅现货
询价
瀚佳科技(深圳)有限公司
MJD112
ON
24+
TO-252-2
85600
全新原装现货/假一罚百!
询价
深圳市佳鑫美电子科技有限公司
MJD112T4
ST/意法半导体
25+
TO-252
4650
绝对原装公司现货
询价
深圳市天芯威科技有限公司
MJD112T4G
ON/安森美
24+
25900
新到现货,只有原装
询价
深圳市得捷芯城科技有限公司
MJD112T4
ST(意法)
25+
N/A
22412
原装正品现货,原厂订货,可支持含税原型号开票。
询价
深圳市芯皇电子有限公司
MJD112T4G
ON(安森美)
TO-252
21+
10000
原装现货支持实单
询价

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MJD112规格书下载地址

MJD112参数引脚图相关

MJD112数据表相关新闻

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