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MJD112晶体管资料

MJD112别名：MJD112三极管、MJD112晶体管、MJD112晶体三极管
MJD112生产厂家：韩国三星公司
MJD112制作材料：Darl
MJD112性质：低频或音频放大（LF）
MJD112封装形式：贴片封装
MJD112极限工作电压：
MJD112最大电流允许值：2A
MJD112最大工作频率：<1MHZ或未知
MJD112引脚数：3
MJD112最大耗散功率：20W
MJD112放大倍数：
MJD112图片代号：G-217
MJD112vtest：0
MJD112htest：999900
MJD112atest：2
MJD112wtest：20

MJD112代换 MJD112用什么型号代替：

MJD112价格

参考价格：￥1.1038

型号：MJD112-1G 品牌：ONSemi 备注：这里有MJD112多少钱，2025年最近7天走势，今日出价，今日竞价，MJD112批发/采购报价，MJD112行情走势销售排行榜，MJD112报价。

型号	功能描述	生产厂家&企业
MJD112	ComplementaryDarlingtonPowerTransistors ComplementaryDarlingtonPowerTransistors DPAKForSurfaceMountApplications Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features •LeadFormedforSurfaceMountApplications	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MJD112	SILICONPOWERTRANSISTORS2AMPERES100VOLTS20WATTS ComplementaryDarlingtonPowerTransistors DPAKForSurfaceMountApplications Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. •LeadFormedforSurfaceMountApplicationsinPlastic	MotorolaMotorola, Inc 摩托罗拉加尔文制造公司
MJD112	COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS Description Thedevicesaremanufacturedinplanartechnologywith“baseisland”layoutandmonolithicDarlingtonconfiguration. Features ■GoodhFElinearity ■HighfTfrequency ■MonolithicDarlingtonconfigurationwith integratedantiparallelcollector-emitterdiode Application ■Lin	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
MJD112	EPITAXIALPLANARNPNTRANSISTOR(MONOLITHICCONSTRUCTIONWITHBUILTINBASE-EMITTERSHUNTRESISTORSINDUSTRIALUSE.) MONOLITHICCONSTRUCTIONWITHBUILTIN BASE-EMITTERSHUNTRESISTORSINDUSTRIALUSE. FEATURES •HighDCCurrentGain. :hFE=1000(Min.),VCE=4V,IC=1A. •LowCollector-EmitterSaturationVoltage. •StraightLead(IPAK,LSuffix) •ComplementarytoMJD117/L.	KECKEC CORPORATION KEC株式会社
MJD112	D-PAKforSurfaceMountApplications Features •HighDCCurrentGain •Built-inaDamperDiodeatE-C •LeadFormedforSurfaceMountApplications(NoSuffix)	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
MJD112	TECHNICALSPECIFICATIONSOFNPNDARLINGTONTRANSISTOR Description Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andamplifiers.	DCCOM Dc Components
MJD112	TO-251/TO-252-2Plastic-EncapsulateTransistors TRANSISTOR(NPN) FEATURES ●Complementarydarlingtonpowertransistors dpakforsurfacemountapplications	WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳实业深圳市永而佳实业有限公司
MJD112	SiliconNPNtransistorinaTO-252PlasticPackage. Descriptions SiliconNPNtransistorinaTO-252PlasticPackage. Features HighDCcurrentgain,built-inadamperdiodeatE-C,electricallysimilartopopularTIP112. Applications Mediumpowerswitchingapplications.	FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司
MJD112	iscSiliconNPNDarlingtonPowerTransistor DESCRIPTION •HighDCcurrentgain •Leadformedforsurfacemountapplications(NOsuffix) •Straightlead(IPAK,“－I”suffix) •Built-inadamperdiodeatE-C •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Desi	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
MJD112	SiliconNPNepitaxialplanerTransistors Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •HighDCCurrentGain •Built-inadamperdiode	MCCMicro Commercial Components 美微科美微科半导体股份有限公司
MJD112	COMPLEMENTARYDARLINGTONPLASTICPOWERTRANSISTORS COMPLEMENTARYDARLINGTONPLASTICPOWERTRANSISTORS DesignedforGeneralPurposePowerandSwitchingApplications	CDIL Continental Device India Limited
MJD112	TRANSISTOR(NPN) FEATURES •ComplementaryDarlingtonPowerTransistors DpakforSurfaceMountApplications	FS First Silicon Co., Ltd
MJD112	ComplementaryDarlingtonPowerTransistors Designedforgeneralpurposepowerandswitchingsuchasoutputor driverstagesinapplicationssuchasswitchingregulators,converters, andpoweramplifiers. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves (NoSuffix) •StraightLeadVersioninPlasticSleeves(	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MJD112	SiliconNPNPowerTransistor DESCRIPTION ·HighDCcurrentgain ·Leadformedforsurfacemountapplications ·Built-inadamperdiodeatE-C ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Designedforgeneralpurposeamplifier andlowspeedswitchingapplications.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
MJD112	SiliconNPNPowerTransistor DESCRIPTION ·HighDCcurrentgain ·Leadformedforsurfacemountapplications ·Built-inadamperdiodeatE-C ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Designedforgeneralpurposeamplifier andlowspeedswitchingapplications.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
MJD112	ComplementaryDarlingtonPowerTransistorsDPAKForSurfaceMountApplications Designedforgeneralpurposepowerandswitchingsuchasoutputor driverstagesinapplicationssuchasswitchingregulators,converters, andpoweramplifiers. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves (NoSuffix) •StraightLeadVersioninPlasticSleeves(“−	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MJD112	COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS 文件：204.34 Kbytes Page：1 Pages	TGS Tiger Electronic Co.,Ltd
MJD112	TRANSISTOR(NPN) 文件：1.54779 Mbytes Page：3 Pages	JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司
MJD112	SiliconNPNepitaxialplanerTransistors 文件：295.08 Kbytes Page：3 Pages	MCCMicro Commercial Components 美微科美微科半导体股份有限公司
MJD112	ComplementaryDarlingtonPowerTransistors 文件：153.95 Kbytes Page：10 Pages	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MJD112	iscSiliconNPNDarlingtonPowerTransistor 文件：384.71 Kbytes Page：3 Pages	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
MJD112	ComplementaryDarlingtonPowerTransistors 文件：144.73 Kbytes Page：8 Pages	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MJD112	COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS 文件：250.7 Kbytes Page：6 Pages	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
MJD112	NPNSiliconDarlingtonTransistor 文件：153.45 Kbytes Page：5 Pages	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
MJD112	ComplementaryDarlingtonPowerTransistors 文件：101.63 Kbytes Page：8 Pages	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MJD112	ComplementarypowerDarlingtontransistors 文件：388.17 Kbytes Page：10 Pages	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
MJD112_V01	ComplementaryDarlingtonPowerTransistors Designedforgeneralpurposepowerandswitchingsuchasoutputor driverstagesinapplicationssuchasswitchingregulators,converters, andpoweramplifiers. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves (NoSuffix) •StraightLeadVersioninPlasticSleeves(	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MJD112_V02	ComplementaryDarlingtonPowerTransistorsDPAKForSurfaceMountApplications Designedforgeneralpurposepowerandswitchingsuchasoutputor driverstagesinapplicationssuchasswitchingregulators,converters, andpoweramplifiers. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves (NoSuffix) •StraightLeadVersioninPlasticSleeves(“−	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MJD112-001	ComplementaryDarlingtonPowerTransistors ComplementaryDarlingtonPowerTransistors DPAKForSurfaceMountApplications Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features •LeadFormedforSurfaceMountApplications	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MJD1121	SILICONPOWERTRANSISTORS2AMPERES100VOLTS20WATTS ComplementaryDarlingtonPowerTransistors DPAKForSurfaceMountApplications Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. •LeadFormedforSurfaceMountApplicationsinPlastic	MotorolaMotorola, Inc 摩托罗拉加尔文制造公司
MJD112-1G	ComplementaryDarlingtonPowerTransistorsDPAKForSurfaceMountApplications Designedforgeneralpurposepowerandswitchingsuchasoutputor driverstagesinapplicationssuchasswitchingregulators,converters, andpoweramplifiers. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves (NoSuffix) •StraightLeadVersioninPlasticSleeves(“−	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MJD112-1G	ComplementaryDarlingtonPowerTransistors Designedforgeneralpurposepowerandswitchingsuchasoutputor driverstagesinapplicationssuchasswitchingregulators,converters, andpoweramplifiers. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves (NoSuffix) •StraightLeadVersioninPlasticSleeves(	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MJD112-251	SiliconNPNPowerTransistor DESCRIPTION ·HighDCcurrentgain ·Leadformedforsurfacemountapplications ·Built-inadamperdiodeatE-C ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Designedforgeneralpurposeamplifier andlowspeedswitchingapplications.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
MJD112-252	SiliconNPNPowerTransistor DESCRIPTION ·HighDCcurrentgain ·Leadformedforsurfacemountapplications ·Built-inadamperdiodeatE-C ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Designedforgeneralpurposeamplifier andlowspeedswitchingapplications.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
MJD112G	ComplementaryDarlingtonPowerTransistorsDPAKForSurfaceMountApplications Designedforgeneralpurposepowerandswitchingsuchasoutputor driverstagesinapplicationssuchasswitchingregulators,converters, andpoweramplifiers. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves (NoSuffix) •StraightLeadVersioninPlasticSleeves(“−	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MJD112G	ComplementaryDarlingtonPowerTransistors Designedforgeneralpurposepowerandswitchingsuchasoutputor driverstagesinapplicationssuchasswitchingregulators,converters, andpoweramplifiers. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves (NoSuffix) •StraightLeadVersioninPlasticSleeves(	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MJD112L	EPITAXIALPLANARNPNTRANSISTOR(MONOLITHICCONSTRUCTIONWITHBUILTINBASE-EMITTERSHUNTRESISTORSINDUSTRIALUSE.) MONOLITHICCONSTRUCTIONWITHBUILTIN BASE-EMITTERSHUNTRESISTORSINDUSTRIALUSE. FEATURES •HighDCCurrentGain. :hFE=1000(Min.),VCE=4V,IC=1A. •LowCollector-EmitterSaturationVoltage. •StraightLead(IPAK,LSuffix) •ComplementarytoMJD117/L.	KECKEC CORPORATION KEC株式会社
MJD112NPN	COMPLEMENTARYDARLINGTONPLASTICPOWERTRANSISTORS COMPLEMENTARYDARLINGTONPLASTICPOWERTRANSISTORS DesignedforGeneralPurposePowerandSwitchingApplications	CDIL Continental Device India Limited
MJD112RL	ComplementaryDarlingtonPowerTransistors ComplementaryDarlingtonPowerTransistors DPAKForSurfaceMountApplications Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features •LeadFormedforSurfaceMountApplications	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MJD112RLG	ComplementaryDarlingtonPowerTransistors Designedforgeneralpurposepowerandswitchingsuchasoutputor driverstagesinapplicationssuchasswitchingregulators,converters, andpoweramplifiers. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves (NoSuffix) •StraightLeadVersioninPlasticSleeves(	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MJD112RLG	ComplementaryDarlingtonPowerTransistorsDPAKForSurfaceMountApplications Designedforgeneralpurposepowerandswitchingsuchasoutputor driverstagesinapplicationssuchasswitchingregulators,converters, andpoweramplifiers. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves (NoSuffix) •StraightLeadVersioninPlasticSleeves(“−	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MJD112T4	ComplementaryDarlingtonPowerTransistors ComplementaryDarlingtonPowerTransistors DPAKForSurfaceMountApplications Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features •LeadFormedforSurfaceMountApplications	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MJD112T4	SILICONPOWERTRANSISTORS2AMPERES100VOLTS20WATTS ComplementaryDarlingtonPowerTransistors DPAKForSurfaceMountApplications Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. •LeadFormedforSurfaceMountApplicationsinPlastic	MotorolaMotorola, Inc 摩托罗拉加尔文制造公司
MJD112T4G	ComplementaryDarlingtonPowerTransistors ComplementaryDarlingtonPowerTransistors DPAKForSurfaceMountApplications Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features •LeadFormedforSurfaceMountApplications	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MJD112T4G	ComplementaryDarlingtonPowerTransistorsDPAKForSurfaceMountApplications Designedforgeneralpurposepowerandswitchingsuchasoutputor driverstagesinapplicationssuchasswitchingregulators,converters, andpoweramplifiers. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves (NoSuffix) •StraightLeadVersioninPlasticSleeves(“−	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MJD112T4G	ComplementaryDarlingtonPowerTransistors Designedforgeneralpurposepowerandswitchingsuchasoutputor driverstagesinapplicationssuchasswitchingregulators,converters, andpoweramplifiers. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves (NoSuffix) •StraightLeadVersioninPlasticSleeves(	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MJD112_03	COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS 文件：250.7 Kbytes Page：6 Pages	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
MJD112_06	NPNSiliconDarlingtonTransistor 文件：153.45 Kbytes Page：5 Pages	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
MJD112_06	ComplementaryDarlingtonPowerTransistors 文件：101.63 Kbytes Page：8 Pages	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MJD112_10	ComplementarypowerDarlingtontransistors 文件：388.17 Kbytes Page：10 Pages	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
MJD112_11	ComplementaryDarlingtonPowerTransistors 文件：144.73 Kbytes Page：8 Pages	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MJD112_16	SiliconNPNepitaxialplanerTransistors 文件：295.08 Kbytes Page：3 Pages	MCCMicro Commercial Components 美微科美微科半导体股份有限公司
MJD112_17	iscSiliconNPNDarlingtonPowerTransistor 文件：384.71 Kbytes Page：3 Pages	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
MJD112-001	ComplementaryDarlingtonPowerTransistors 文件：101.63 Kbytes Page：8 Pages	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MJD112-1G	ComplementaryDarlingtonPowerTransistors 文件：101.63 Kbytes Page：8 Pages	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MJD112-1G	封装/外壳：TO-251-3 短引线，IPak，TO-251AA 包装：管件描述：TRANS NPN DARL 100V 2A IPAK 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MJD112G	封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带描述：TRANS NPN DARL 100V 2A DPAK 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MJD112G	ComplementaryDarlingtonPowerTransistors 文件：101.63 Kbytes Page：8 Pages	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MJD112G	ComplementaryDarlingtonPowerTransistors 文件：144.73 Kbytes Page：8 Pages	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MJD112RL	ComplementaryDarlingtonPowerTransistors 文件：144.73 Kbytes Page：8 Pages	ONSEMION Semiconductor 安森美半导体安森美半导体公司

MJD112产品属性

类型
描述
型号
MJD112
功能描述
达林顿晶体管 2A 100V Bipolar
RoHS
否
制造商
Texas Instruments
配置
Octal
晶体管极性
NPN 集电极—发射极最大电压
VCEO
50 V 发射极 - 基极电压
VEBO
集电极—基极电压
最大直流电集电极电流
0.5 A
最大工作温度
+ 150 C
安装风格
SMD/SMT
封装/箱体
SOIC-18
封装
Reel

MJD112供应商更多...

更新时间：2025-7-2 9:04:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市永贝尔科技有限公司	MJD112T4G	ON(安森美)	2023+	TO-252-2(DPAK)	4550	全新原装正品	询价
深圳兆威电子有限公司	MJD112	CJ/长电	22+	TO-252	50906	原装正品现货,可开13点税	询价
深圳市百域芯科技有限公司	MJD112	CJ/长电	21+	TO-252	30000	百域芯优势实单必成可开13点增值税发票	询价
深圳市安富世纪电子有限公司	MJD112	CJ	23+	TO-252	50000	全新原装正品现货,支持订货	询价
深圳市昌和盛利电子有限公司	MJD112	ON	23+	TO252	12335		询价
柒号芯城电子商务(深圳)有限公司	MJD112G	ON	2024+	N/A	70000	柒号只做原装现货价秒杀全网	询价
深圳市金芯阳科技有限公司	MJD112T4G	ON	15+	原厂原装	40000	进口原装现货假一赔十	询价
深圳市天芯威科技有限公司	MJD112T4G	ON/安森美	24+		25900	新到现货,只有原装	询价
瀚佳科技(深圳)有限公司	MJD112	ON	24+	TO-252-2	85600	全新原装现货/假一罚百!	询价
深圳市特瑞斯科技有限公司	MJD112	长电	23+	TO-252	750000	一级分销商	询价

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MJD112晶体管资料

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MJD112供应商更多...

MJD112芯片相关品牌

MJD112规格书下载地址

MJD112参数引脚图相关

MJD112数据表相关新闻

MIXA60W1200TED IGBT 模块

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