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MJD112G价格
参考价格：￥1.0903
型号：MJD112G 品牌：ONSemi 备注：这里有MJD112G多少钱，2026年最近7天走势，今日出价，今日竞价，MJD112G批发/采购报价，MJD112G行情走势销售排行榜，MJD112G报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MJD112G | Complementary Darlington Power Transistors Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves ( | ONSEMI 安森美半导体 |   | |
MJD112G | Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“− | ONSEMI 安森美半导体 | | |
MJD112G | 封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN DARL 100V 2A DPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | |
MJD112G | Complementary Darlington Power Transistors 文件：101.63 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | |
MJD112G | Complementary Darlington Power Transistors 文件：144.73 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | |
SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. • Lead Formed for Surface Mount Applications in Plastic | MOTOROLA 摩托罗拉 | | ||
JFET Chopper Transistor (N-Channel- Depletion) JFET Chopper Transistor N–Channel — Depletion | MOTOROLA 摩托罗拉 | | ||
POWER TRANSISTORS(2.0A,60-100V,50W)
| MOSPEC 统懋 | | ||
DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS
| MOTOROLA 摩托罗拉 | | ||
Operational Amplifiers 文件：200.55 Kbytes Page：6 Pages | NSC 国半 | |
MJD112G产品属性
- 类型
描述
- 型号
MJD112G
- 功能描述
达林顿晶体管 2A 100V Bipolar Power NPN
- RoHS
否
- 制造商
Texas Instruments
- 配置
Octal
- 晶体管极性
NPN 集电极—发射极最大电压
- VCEO
50 V 发射极 - 基极电压
- VEBO
集电极—基极电压
- 最大直流电集电极电流
0.5 A
- 最大工作温度
+ 150 C
- 安装风格
SMD/SMT
- 封装/箱体
SOIC-18
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
24+ |
TO-252 |
959 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
ONSEMI |
25+ |
N/A |
22412 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
ONSEMI/安森美 |
25+ |
TO-252 |
20300 |
ONSEMI/安森美原装特价MJD112G即刻询购立享优惠#长期有货 |
|||
ON |
10+ |
TO-252 |
90 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ON |
2018+ |
D-PAK |
26976 |
代理原装现货/特价热卖! |
|||
ON-SEMI |
25+ |
302 |
公司优势库存 热卖中! |
||||
ON |
2025+ |
TO252 |
3625 |
全新原厂原装产品、公司现货销售 |
|||
ON(安森美) |
25+ |
标准封装 |
20000 |
原装，请咨询 |
|||
ON |
TO-252 |
50000 |
|||||
ON(安森美) |
23+ |
标准封装 |
5000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
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MJD112G规格书下载地址
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