丝印代码：IXFN50N120SiC；SiC Power MOSFET

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丝印代码：IXFN50N120SK；Kelvin Source gate connection

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丝印代码：IXFN70N120SK；Kelvin Source gate connection

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HIPERFET Power MOSFTETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

HiPerFET Power MOSFETs with Schottky Diodes

HiPerFET™ Power MOSFETs with Schottky Diodes Parallel, Buck & Boost Configurations for SMPS, PFC & Motor Control Circuits

HiPerFET Power MOSFETs with Schottky Diodes

HiPerFET™ Power MOSFETs with Schottky Diodes Parallel, Buck & Boost Configurations for SMPS, PFC & Motor Control Circuits

Boost and Buck Configurations

·Vdss: 45V - 600V, Id(25): 21A - 150A \n·Very Low Rds(on): 3.8 mOhms\n·dv/dt ruggedness. Fast reverse diode\n·low inductive current path\n·Kelvin source terminals for easy drive\n·2500 V rms Isolation with ceramic base plate;

Boost and Buck Configurations

·Vdss: 45V - 600V, Id(25): 21A - 150A \n·Very Low Rds(on): 3.8 mOhms\n·dv/dt ruggedness. Fast reverse diode\n·low inductive current path\n·Kelvin source terminals for easy drive\n·2500 V rms Isolation with ceramic base plate;

HiPerFET Power MOSFETs with Schottky Diodes

HiPerFET™ Power MOSFETs with Schottky Diodes Parallel, Buck & Boost Configurations for SMPS, PFC & Motor Control Circuits

HiPerFET Power MOSFETs

N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features ● International standard packages ● JEDECTO-264 AA,epoxymeet UL94V-0, flammability classification ● miniBLOC with Aluminium nitride isolation ● Low RDS (on) HDMOSTM process ● Rugged polysilicon gate cell structure ● U

N通道HiPerFET

• 国际标准包装 \n• 高电流处理能力\n• 低RDS(on) HDMOS过程\n• 雪崩评级\n• 较低的封装电感\n• 快速本征二极管;

N-Channel MOSFET

DESCRIPTION · Drain Current -ID= 100A@ TC=25℃ · Drain Source Voltage -VDSS= 200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 23mΩ(Max)@VGS= 10V APPLICATIONS · DC-DC Converter · Battery Chargers · Synchronous Rectification

N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low

HiPerFET Power MOSFETs Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features • International standard package • miniBLOC, with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Swi

N-Channel MOSFET

DESCRIPTION ·Drain Current -ID= 100A@ TC=25℃ ·Drain Source Voltage -VDSS= 300V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 23mΩ(Max)@VGS= 10V APPLICATIONS ·DC-DC converters ·Battery chargers ·DC choppers ·Low voltage relays

N-Channel MOSFET

DESCRIPTION · Drain Current -ID= 90A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) =49mΩ(Max)@VGS= 10V APPLICATIONS · DC-DC converter · High speed power switch

PolarHV HiPerFET Power MOSFET

PolarHV™ HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • International standard package • Encapsulating epoxy meets UL 94 V-0, flammability classification • miniBLOC with Aluminium nitride isolation • Fast recovery diode • Unclamped Inducti

HiPerFET Power MOSFETs

N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features ● International standard packages ● JEDECTO-264 AA,epoxymeet UL94V-0, flammability classification ● miniBLOC with Aluminium nitride isolation ● Low RDS (on) HDMOSTM process ● Rugged polysilicon gate cell structure ● U

N-Channel MOSFET

DESCRIPTION · Drain Current -ID= 106A@ TC=25℃ · Drain Source Voltage -VDSS= 200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 20mΩ(Max)@VGS= 10V APPLICATIONS · DC-DC Converter · Battery Chargers · Synchronous Rectification

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 110A@ TC=25℃ · Drain Source Voltage -VDSS= 850V(Min) · Static Drain-Source On-Resistance -RDS(on) = 33mΩ(Max)@VGS= 10V APPLICATIONS · DC-DC Converters · AC and DC Motor Drives · Power Factor Correction (PFC)

N-Channel MOSFET

DESCRIPTION ·Drain Current -ID= 120A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 17mΩ(Max)@VGS= 10V APPLICATIONS ·DC-DC converters ·DC choppers ·Battery chargers ·Temperature and lighting controls ·Switched-mode and resonant-mode power su

HiPer FET Power MOSFETs

HiPerFETTM Power MOSFETs Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features • Encapsulating epoxy meets UL 94 V-0, flammability classification • International standard package • miniBLOC, with Aluminium nitride isolation • Low RDS (on) HDMOSTM process

HiPerFET Power MOSFETs Single Die MOSFET

VDSS = 300 V ID25 = 130 A RDS(on) = 22 mΩ trr N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features International standard packages miniBLOC, with Aluminium nitride isolation Low RDS (on) HDMOS™ process Rugged polysilicon gate cell structure

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=130A@ TC=25℃ ·Drain Source Voltage : VDSS= 300V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 18mΩ(TYP) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION ·motor drive, DC-DC c

HiPerFET Power MOSFETs

HiPerFET Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features ● International standard packages ● JEDECTO-264 AA,epoxymeet UL94V-0, flammability classification ● miniBLOC with Aluminium nitride isolation ● Low RDS (on) HDMOSTM process ● Rugged polysilicon

HiPerFET Power MOSFET

HiPerFET Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features ● International standard packages ● JEDECTO-264 AA,epoxymeet UL94V-0, flammability classification ● miniBLOC with Aluminium nitride isolation ● Low RDS (on) HDMOSTM process ● Rugged polysilicon

HiPerFET Power MOSFET

Single MOSFET Die Features ● International standard package ● Encapsulating epoxy meets UL94V-0, flammability classification ● miniBLOC with Aluminium nitride isolation ● Low RDS (on) HDMOSTM process ● Rugged polysilicon gate cell structure ● Unclamped Inductive Switching (UIS) rated ●

N-Channel MOSFET

DESCRIPTION · Drain Current -ID= 145A@ TC=25℃ · Drain Source Voltage -VDSS= 650V(Min) · Static Drain-Source On-Resistance -RDS(on) = 17mΩ(Max)@VGS= 10V APPLICATIONS · DC-DC Converter · PFC Circuits · Power Supplies

HIPERFET Power MOSFTETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

HiPerFET Power MOSFET

HiPerFET™ Power MOSFET Single MOSFET Die Features • International standard packages • Encapsulating epoxy meets UL94V-0, flammability classification • miniBLOC with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Swi

N-Channel MOSFET

DESCRIPTION ·Drain Current -ID= 138A@ TC=25℃ ·Drain Source Voltage -VDSS= 300V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 18Ω(Max)@VGS= 10V APPLICATIONS ·DC-DC converter ·Battery Chargers ·High speed power switch

HIPERFET Power MOSFTETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

HiPerFET Power MOSFETs

HiPerFET™ Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features • International standard packages • miniBLOC with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated

HiPerFET Power MOSFETs

HiPerFET™ Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features • International standard packages • miniBLOC with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated

HiPerFET Power MOSFET Single MOSFET Die

HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Features • International Standard Package • miniBLOC, with Aluminium Nitride Isolation • Dynamic dv/dt Rating • Avalanche Rated • Fast Intrinsic Rectifier • Low RDS(on) • Low Drain-to-Tab Capacitan

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 180A@ TC=25℃ · Drain Source Voltage -VDSS= 100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 8mΩ(Max)@VGS= 10V APPLICATIONS · DC-DC Converters · Synchronous Rectification · Low Voltage relays · Battery Chargers

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 150A@ TC=25℃ · Drain Source Voltage -VDSS= 150V(Min) · Static Drain-Source On-Resistance -RDS(on) = 11mΩ(Max)@VGS= 10V APPLICATIONS · Switching

PolarHT HiPerFET Power MOSFET

PolarHT™ HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • International standard package • Encapsulating epoxy meets UL 94 V-0, flammability classification • miniBLOC with Aluminium nitride isolation • Fast recovery diode • Unclamped Inducti

HiPerFET Power MOSFETs Single Die MOSFET

HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Features • International Standard Package • miniBLOC with Aluminum Nitride Isolation • Avalanche Rated • Low Package Inductance • Fast Intrinsic Rectifier • Low RDS(on) and QG Advantages • Easy

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 180A@ TC=25℃ · Drain Source Voltage -VDSS= 200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 12.5Ω(Max)@VGS= 10V APPLICATIONS · Battery Chargers · DC Choppers · Power Factor Correction (PFC) · DC-DC Converters · High Speed Power Switching Application

GigaMOS Power MOSFET

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features International Standard Package miniBLOC, with Aluminium Nitride Isolation Isolation voltage 2500 V~ High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Applications

HiPerFET Power MOSFETs

HiPerFET™ Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features • International standard packages • miniBLOC with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated

HiPerFET Power MOSFETs

HiPerFET™ Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features • International standard packages • miniBLOC with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated

HiPerFET Power MOSFETs

HiPerFET Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features • International standard package • miniBLOC, with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated

Polar Power MOSFET HiPerFET

Polar™ Power MOSFET HiPerFET™ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • International standard package • Encapsulating epoxy meets UL 94 V-0, flammability classification • miniBLOC with Aluminium nitride isolation • Fast recovery diode • Unclamped Inductive

Polar HiPerFET

Polar™ HiPerFET™ Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • International Standard Package • miniBLOC, with Aluminium Nitride Isolation • Low Package Inductance Avalanche Rated • Low RDS(ON) and QG • Fast Intrinsic Diode Advantages • Easy to

HiPerFET TM Power MOSFETs Q-Class

Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Features • IXYS advanced low Qg process • Low gate charge and capacitances - easier to drive - faster switching • Unclamped Inductive Switching (UIS) rated • Low RDS (on) • Fast intrinsic diode • Int

N-Channel MOSFET

DESCRIPTION ·Drain Current -ID= 21A@ TC=25℃ ·Drain Source Voltage -VDSS= 1000V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.5Ω(Max)@VGS= 10V APPLICATIONS ·Switching application ·DC-DC converters ·Battery chargers

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 230A@ TC=25℃ · Drain Source Voltage -VDSS= 100V(Min) · Static Drain-Source On-Resistance -RDS(on) =6.0mΩ(Max)@VGS= 10V APPLICATIONS · Motor Drive, DC-DC Converter, Power Switch and Solenoid Drive.

Power MOSFETs Single Die MOSFET

Power MOSFET Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features • International standard package • miniBLOC, with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Avalanche rated • Guaranteed FBSO

GigaMOS Power MOSFET

GigaMOS Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • International Standard Package • miniBLOC, with Aluminium Nitride Isolation • Isolation voltage 2500 V~ • High Current Handling Capability • Fast Intrinsic Diode • Avalanche Rated • Low RDS(o

N-Channel MOSFET

DESCRIPTION · Drain Current -ID= 220A@ TC=25℃ · Drain Source Voltage -VDSS= 200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 7.5mΩ(Max)@VGS= 10V APPLICATIONS · DC-DC Converter · Battery Chargers · DC Choppers

HiPerFET-TM Power MOSFET

Features • International standard package • Encapsulating epoxy meets UL 94 V-0, flammability classification • miniBLOC with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package indu

GigaMOS TrenchT2 HiperFET Power MOSFET

GigaMOS™ TrenchT2 HiperFET™ Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • International Standard Package • miniBLOC, with Aluminium Nitride Isolation • Isolation voltage 2500 V~ • High Current Handling Capability • Fast Intrinsic Diode • Avalanch

HiPerRF Power MOSFETs

Features • International standard package • Encapsulating epoxy meets UL 94 V-0, flammability classification • miniBLOC with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package indu

HiPerFET-TM Power MOSFET

Features • International standard package • Encapsulating epoxy meets UL 94 V-0, flammability classification • miniBLOC with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package indu

HiPerRF Power MOSFETs F-Class: MegaHertz Switching

N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr Features • RF capable MOSFETs • Double metal process for low gate resistance • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect

HiPerRF Power MOSFETs

Features • International standard package • Encapsulating epoxy meets UL 94 V-0, flammability classification • miniBLOC with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package indu

HiPerFETTM Power MOSFETs

HiPerFET™ Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features • International standard packages • JEDECTO-264 AA,epoxymeet UL 94 V-0, flammability classification • miniBLOC, with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilic

HiPerFET Power MOSFETs

HiPerFET™ Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features • International standard packages • JEDECTO-264 AA,epoxymeet UL 94 V-0, flammability classification • miniBLOC, with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilic

HiPerFET Power MOSFETs Single Die MOSFET

N-Channel Enhancement Mode Avalanche Rated,High dv/dt, Low trr Fast Intrinsic Diode Features ● International standard package ● miniBLOC, with Aluminium nitride isolation ● Low RDS(ON) HDMOSTM process ● Avalanche Rated ● Low package inductance ● Fast intrinsic diode Advantages ● Low gate