HiPerFET Power MOSFETs

HiPerFET Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features • International standard package • miniBLOC, with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated

N-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

Polar Power MOSFET HiPerFET

Polar™ Power MOSFET HiPerFET™ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • International standard package • Encapsulating epoxy meets UL 94 V-0, flammability classification • miniBLOC with Aluminium nitride isolation • Fast recovery diode • Unclamped Inductive

N通道HiPerFET MOSFET

63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N120CND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has

General purpose inverters

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Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package

文件：769.26 Kbytes Page：6 Pages

1200V, 20A Trench IGBT

文件：721.12 Kbytes Page：9 Pages

1200V, 20A Trench IGBT

文件：721.12 Kbytes Page：9 Pages