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IXFN24N100价格
参考价格：￥144.9425
型号：IXFN24N100 品牌：IXYS 备注：这里有IXFN24N100多少钱，2024年最近7天走势，今日出价，今日竞价，IXFN24N100批发/采购报价，IXFN24N100行情走势销售排行榜，IXFN24N100报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IXFN24N100 | HiPerRFPowerMOSFETs Features •Internationalstandardpackage •Encapsulatingepoxymeets UL94V-0,flammabilityclassification •miniBLOCwithAluminiumnitrideisolation •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageindu | IXYS IXYS Integrated Circuits Division |  |   |
IXFN24N100 | HiPerFET-TMPowerMOSFET Features •Internationalstandardpackage •Encapsulatingepoxymeets UL94V-0,flammabilityclassification •miniBLOCwithAluminiumnitrideisolation •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageindu | IXYS IXYS Integrated Circuits Division | | |
HiPerRFPowerMOSFETs Features •Internationalstandardpackage •Encapsulatingepoxymeets UL94V-0,flammabilityclassification •miniBLOCwithAluminiumnitrideisolation •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageindu | IXYS IXYS Integrated Circuits Division | | | |
HiPerRFPowerMOSFETsF-Class:MegaHertzSwitching N-ChannelEnhancementMode AvalancheRated,LowQg,LowIntrinsicRg HighdV/dt,Lowtrr Features •RFcapableMOSFETs •Doublemetalprocessforlowgateresistance •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect | IXYS IXYS Integrated Circuits Division | | | |
HiPerFETPowerMOSFET 文件：113.92 Kbytes Page：4 Pages | IXYS IXYS Integrated Circuits Division | | | |
SingleMOSFETDie HiPerFETPowerMOSFET SingleMOSFETDie Features •ConformstoSOT-227Boutline •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance •FastintrinsicRectifier Applications •DC-DCconverters •Batte | IXYS IXYS Integrated Circuits Division | | | |
HiPerFETTMPowerMosfetinHighVoltageISOPLUSI4-PACTM Features •HiPerFETTMtechnology -lowRDSon -lowgatechargeforhighfrequencyoperation -unclampedinductiveswitching(UIS)capability -dv/dtruggedness -fastintrinsicreversediode •ISOPLUSI4-PAC™highvoltagepackage -isolatedbacksurface -enlargedcree | IXYS IXYS Integrated Circuits Division | | | |
HiPerRFPowerMOSFETs HiPerFET™PowerMOSFETs N-ChannelEnhancementMode AvalancheRated FastIntrisicDiode Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Avalancherated •Lowpackageinductance •Fastintrinsicrectifier Applications • | IXYS IXYS Integrated Circuits Division | | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=24A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.39Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
HiPerFETTMPowerMOSFETs 文件：137.63 Kbytes Page：4 Pages | IXYS IXYS Integrated Circuits Division | | |
IXFN24N100产品属性
- 类型
描述
- 型号
IXFN24N100
- 功能描述
MOSFET 1KV 24A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS |
23+ |
模块 |
3562 |
||||
IXYS |
21+ |
模块 |
12588 |
原装正品,一级品牌代理 |
|||
IXYS |
2018+ |
module |
6000 |
全新原装正品现货,假一赔佰 |
|||
IXYS场效应 |
23+ |
模块 |
2060 |
专业供应模块 热卖库存 |
|||
IXYS |
23+ |
SOT227 |
553 |
||||
IXYS |
23+ |
模块 |
362 |
全新原装正品,量大可订货!可开17%增值票!价格优势! |
|||
IXYS/艾赛斯 |
23+ |
MODULE |
1260 |
原装正品,价格优势 |
|||
IXYS |
23+ |
模块 |
402 |
价格优势/原装现货/客户至上/欢迎广大客户来电查询 |
|||
IXYS/艾赛斯场效应管 |
22+ |
MODULE |
6000 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
|||
IXYS/艾赛斯 |
18+ |
SOT227 |
12500 |
全新原装正品,本司专业配单,大单小单都配 |
IXFN24N100芯片相关品牌
IXFN24N100规格书下载地址
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DdatasheetPDF页码索引
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