HiPerFET Power MOSFET Single MOSFET Die

HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Features • International Standard Package • miniBLOC, with Aluminium Nitride Isolation • Dynamic dv/dt Rating • Avalanche Rated • Fast Intrinsic Rectifier • Low RDS(on) • Low Drain-to-Tab Capacitan

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 180A@ TC=25℃ · Drain Source Voltage -VDSS= 100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 8mΩ(Max)@VGS= 10V APPLICATIONS · DC-DC Converters · Synchronous Rectification · Low Voltage relays · Battery Chargers

N通道HiPerFET

Power MOSFET

文件：144.35 Kbytes Page：6 Pages

Power MOSFET

文件：144.35 Kbytes Page：6 Pages

OptiMOSTM3 Power-Transistor

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchr

N-Channel Power MOSFET

文件：595.58 Kbytes Page：5 Pages

N-Channel Enhancement Mode Power Mosfet

文件：3.98832 Mbytes Page：7 Pages

N-Channel Enhancement Mode Power Mosfet

文件：3.65918 Mbytes Page：7 Pages

Superior Avalanche Rugged Technology

文件：989.45 Kbytes Page：9 Pages