HiPerFETPowerMOSFETs

HiPerFET™PowerMOSFETs N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features •Internationalstandardpackages •miniBLOCwithAluminiumnitrideisolation •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated

HiPerFETPowerMOSFETs

HiperFETPowerMOSFETs N-ChannelEnhancementMode AvalancheRated FastIntrinsicRectifier Features •InternationalStandardPackages •AvalancheRated •LowIntrinsicGateResistance •LowPackageInductance •FastIntrinsicRectifier •LowRDS(on)andQG Advantages •HighPowerDensi

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=180A@TC=25℃ ·DrainSourceVoltage :VDSS=70V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=6mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

HiPerFETPowerMOSFETsISOPLUS247

SingleMOSFETDie Features •SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation •Lowdraintotabcapacitance(

PowerMOSFETs

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