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IXFN120N20价格
参考价格：￥122.1695
型号：IXFN120N20 品牌：IXYS 备注：这里有IXFN120N20多少钱，2024年最近7天走势，今日出价，今日竞价，IXFN120N20批发/采购报价，IXFN120N20行情走势销售排行榜，IXFN120N20报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IXFN120N20 | HiPerFETPowerMOSFETs HiPerFETTMPowerMOSFETsSingleMOSFETDie N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features •EncapsulatingepoxymeetsUL94V-0,flammabilityclassification •Internationalstandardpackage •miniBLOC,withAluminiumnitrideisolation •LowRDS(on)HDMOSTMprocess | IXYS IXYS Integrated Circuits Division |  |   |
IXFN120N20 | N-ChannelMOSFET DESCRIPTION ·DrainCurrent-ID=120A@TC=25℃ ·DrainSourceVoltage -VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=17mΩ(Max)@VGS=10V APPLICATIONS ·DC-DCconverters ·DCchoppers ·Batterychargers ·Temperatureandlightingcontrols ·Switched-modeandresonant-modepowersu | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
PolarHTHiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features •InternationalStandardPackages •AvalancheRated •FastIntrinsicDiode •LowQG •LowRDS(on) •LowDrain-to-TabCapacitance •LowPackageInductance Advantages •EasytoMount •SpaceSavings | IXYS IXYS Integrated Circuits Division | | | |
HiPerFETPowerMOSFETs SingleMOSFETDie Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS) rated •Lowpackageinductance -easytodriveandtoprotect •Fastintrinsicrectifier Applicatio | IXYS IXYS Integrated Circuits Division | | | |
N-ChannelMOSFETTransistor 文件：338.17 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-ChannelMOSFETTransistor 文件：338.17 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
MetalOxideSemiconductorFieldEffectTransistor 文件：1.30327 Mbytes Page：12 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  | |
IXFN120N20产品属性
- 类型
描述
- 型号
IXFN120N20
- 功能描述
MOSFET 200V 120A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS/艾赛斯 |
22+ |
NA |
1120 |
中国航天工业部战略合作伙伴行业领导者 |
|||
IXYS |
2022 |
SOT-227B |
58 |
原厂原装正品,价格超越代理 |
|||
IXYS |
2023+ |
MODULE |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
|||
23+ |
59 |
专业模块销售,欢迎咨询 |
|||||
IXYS |
23+ |
MODULE |
1000 |
全新原装现货 |
|||
IXYS |
23+ |
SOT-227 |
8650 |
受权代理!全新原装现货特价热卖! |
|||
IXYS |
2306+ |
MODULE |
518 |
优势代理渠道,原装现货,可全系列订货 |
|||
IXYS |
23+ |
模块 |
595 |
全新原装正品,量大可订货!可开17%增值票!价格优势! |
|||
IXYS/艾赛斯 |
21+ROHS |
MODULE |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
IXYS模块 |
22+23+ |
SOT-227 |
18753 |
绝对原装正品全新进口深圳现货 |
IXFN120N20芯片相关品牌
IXFN120N20规格书下载地址
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DdatasheetPDF页码索引
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