HiPer FET Power MOSFETs

HiPerFETTM Power MOSFETs Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features • Encapsulating epoxy meets UL 94 V-0, flammability classification • International standard package • miniBLOC, with Aluminium nitride isolation • Low RDS (on) HDMOSTM process

N-Channel MOSFET

DESCRIPTION ·Drain Current -ID= 120A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 17mΩ(Max)@VGS= 10V APPLICATIONS ·DC-DC converters ·DC choppers ·Battery chargers ·Temperature and lighting controls ·Switched-mode and resonant-mode power su

N通道HiPerFET

PolarHT HiPerFET Power MOSFET

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • International Standard Packages • Avalanche Rated • Fast Intrinsic Diode • Low QG • Low RDS(on) • Low Drain-to-Tab Capacitance • Low Package Inductance Advantages • Easy to Mount • Space Savings

HiPerFET Power MOSFETs

Single MOSFET Die Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic rectifier Applicatio

N-Channel MOSFET Transistor

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N-Channel MOSFET Transistor

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Metal Oxide Semiconductor Field Effect Transistor

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