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型号 功能描述 生产厂家 企业 LOGO 操作
IRL1104

HEXFET Power MOSFET

VDSS = 40V RDS(on) = 0.008Ω ID = 104A… Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and rugged

IRF

IRL1104

HEXFET Power MOSFET

INFINEON

英飞凌

Logic-Level Gate Drive

VDSS = 40V RDS(on) = 0.008Ω ID = 104A… Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and rugged

IRF

HEXFET Power MOSFET

VDSS = 40V RDS(on) = 0.008Ω ID = 104A… Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and rugged

IRF

Logic-Level Gate Drive

VDSS = 40V RDS(on) = 0.008Ω ID = 104A… Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and rugged

IRF

Logic-Level Gate Drive

VDSS = 40V RDS(on) = 0.008Ω ID = 104A… Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and rugged

IRF

Advanced Process Technology Logic-Level Gate Drive

VDSS = 40V RDS(on) = 0.008Ω ID = 104A… Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and rugged

IRF

HEXFET Power MOSFET

VDSS = 40V RDS(on) = 0.008Ω ID = 104A… Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and rugged

IRF

Logic-Level Gate Drive

INFINEON

英飞凌

Advanced Process Technology Logic-Level Gate Drive

INFINEON

英飞凌

RECTIFIER DIODE

RECTIFIER DIODE Repetitive voltage up to 2900 V Mean forward current 1680 A Surge current 17.9 kA

POSEICO

Integrated Circuit Wide and Narrow Band Amp, FM/IF Limiter

Applications: • For FM IF Amplifier • For TV SIF Amplifier

NTE

DOLBY PRO LOGIC SURROUND DECODER

文件:84.44 Kbytes Page:6 Pages

NJRC

日本无线

Cost effective battery monitor and fast charge IC for NiCd and NiMH chargers

文件:119.95 Kbytes Page:16 Pages

PHILIPS

飞利浦

Cost effective battery monitor and fast charge IC for NiCd and NiMH chargers

文件:119.95 Kbytes Page:16 Pages

PHILIPS

飞利浦

IRL1104产品属性

  • 类型

    描述

  • 型号

    IRL1104

  • 功能描述

    MOSFET N-CH 40V 104A TO-220AB

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    HEXFET®

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • MOSFET N 通道,金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大)

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

更新时间:2026-5-24 22:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
24+
TO-263
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
IR
25+23+
TO-263
28959
绝对原装正品全新进口深圳现货
IR
2450+
TO-263
9850
只做原装正品现货或订货假一赔十!
IR
04+
TO-263
797
IR
26+
TO-262
35890
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
IR
25+
TO-220
880000
明嘉莱只做原装正品现货
IR
24+
TO-262
8866
IR
25+
TO-263
9000
只做原装正品 有挂有货 假一赔十
IR
17+
TO-220
6200
IR
18+
TO-220A
85600
保证进口原装可开17%增值税发票

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