位置：首页 > IC中文资料第4867页 > IRL1104
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRL1104 | HEXFET Power MOSFET VDSS = 40V RDS(on) = 0.008Ω ID = 104A Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and rugged | IRF |   | |
IRL1104 | HEXFET Power MOSFET | Infineon 英飞凌 | | |
Logic-Level Gate Drive VDSS = 40V RDS(on) = 0.008Ω ID = 104A Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and rugged | IRF | | ||
HEXFET Power MOSFET VDSS = 40V RDS(on) = 0.008Ω ID = 104A Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and rugged | IRF | | ||
Logic-Level Gate Drive VDSS = 40V RDS(on) = 0.008Ω ID = 104A Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and rugged | IRF | | ||
Advanced Process Technology Logic-Level Gate Drive VDSS = 40V RDS(on) = 0.008Ω ID = 104A Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and rugged | IRF | | ||
Logic-Level Gate Drive VDSS = 40V RDS(on) = 0.008Ω ID = 104A Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and rugged | IRF | | ||
HEXFET Power MOSFET VDSS = 40V RDS(on) = 0.008Ω ID = 104A Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and rugged | IRF | | ||
Logic-Level Gate Drive | Infineon 英飞凌 | | ||
Advanced Process Technology Logic-Level Gate Drive | Infineon 英飞凌 | | ||
MMCX RIGHT ANGLE PLUG CRIMP ELECTRICAL: IMPEDANCE: 50 OHMS. WITHSTAND VOLTAGE: 500V FREQUENCY RANGE: 0 - 6 GHz. VSWR: ≤ 1.50 @ 0-6 GHz. DURABILITY: ≥ 500 CYCLE CABLE RETENTION: > 10 POUNDS MISCELLANEOUS: APPLICATION: LOW-LOSS 100 SERIES, RG174, RG316, RG188, & RG179. COMPONENTS SHALL BE INDIVIDUALLY PACKAGED IN ACCO | L-COM 英飞畅 | | ||
TORQUE PRODUCTS 文件：3.50277 Mbytes Page：32 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
CAROL STREAM, ILLINOIS 60188 文件：174.65 Kbytes Page：1 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Heyco짰 Original Strain Relief Bushings 文件：137.33 Kbytes Page：1 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Original Strain Relief Bushings 文件：136.21 Kbytes Page：1 Pages | Heyco | |
IRL1104产品属性
- 类型
描述
- 型号
IRL1104
- 功能描述
MOSFET N-CH 40V 104A TO-220AB
- RoHS
否
- 类别
分离式半导体产品 >> FET - 单
- 系列
HEXFET®
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR/VISHAY |
24+ |
NA/ |
18500 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
IR |
24+ |
TO-220 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
IR |
24+ |
TO 263 |
161300 |
明嘉莱只做原装正品现货 |
|||
INFINEON/英飞凌 |
25+ |
TO-220 |
20300 |
INFINEON/英飞凌原装特价IRL1104PBF即刻询购立享优惠#长期有货 |
|||
IR |
23+ |
TO-220 |
10000 |
专做原装正品,假一罚百! |
|||
VBsemi |
21+ |
TO220 |
10026 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
IR |
2450+ |
TO-263 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
IR |
24+ |
TO-220AB |
8866 |
||||
IR |
24+ |
TO-220 |
10000 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
IR |
18+ |
TO-220A |
85600 |
保证进口原装可开17%增值税发票 |
IRL1104芯片相关品牌
IRL1104规格书下载地址
IRL1104参数引脚图相关
- l101
- l100
- ku波段
- kt250
- kse13005
- ks20
- km710
- ka5q1265rf
- k9f1208
- k310
- k2698
- k233
- k2055
- k2010
- jumper
- jtag接口
- jk触发器
- j111
- j108
- isd1420
- IRL3803
- IRL3716
- IRL3715
- IRL3714
- IRL3713
- IRL3502
- IRL3402
- IRL3303
- IRL3302
- IRL3215
- IRL3202
- IRL3103
- IRL3102
- IRL2910
- IRL2703
- IRL2505
- IRL2310
- IRL2203
- IRL220
- IRL1404SPFF
- IRL1404SPBF
- IRL1404S
- IRL1404PBF
- IRL1404LPBF
- IRL1404L
- IRL1404
- IRL119P40
- IRL119P20
- IRL119P10
- IRL119F40
- IRL119F20
- IRL119F10
- IRL1104STRR
- IRL1104STRLPBF
- IRL1104STRL
- IRL1104SPBF
- IRL1104S
- IRL1104PBF
- IRL1104LPBF
- IRL1104L
- IRL1004STRRPBF
- IRL1004STRR
- IRL1004STRLPBF
- IRL1004STRL
- IRL1004SPBF
- IRL1004S
- IRL1004PBF
- IRL1004LPBF
- IRL1004L
- IRL1004HR
- IRL1004
- IRL10
- IRL03 310X220X0.5
- IRL03 310X220X0.25
- IRL02AB300X200X0.05
- IRL02AB 300X200X0.05
- IRL02A200X200X2
- IRL02A200X200X1
- IRL02A100X100X1
- IRL02A 200X200X2
- IRKV105
- IRKU71
- IRKU41
- IRKU105
- IRKTF82
- IRKTF72
- IRKT92
- IRKT71
- IRKT70
- IRKT570
- IRKT55
- IRKT500
- IRKT41
- IRKT40
- IRKT330
- IRKT26
- IRKT250
- IRKT1O6
IRL1104数据表相关新闻
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2019-5-8
DdatasheetPDF页码索引
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