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IRL1104LPBF中文资料
IRL1104LPBF数据手册规格书PDF详情
VDSS = 40V
RDS(on) = 0.008Ω
ID = 104A
Description
Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
● Advanced Process Technology
● Surface Mount (IRL1104S)
● Low-profile through-hole (IRL1104L)
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
● Logic-Level Gate Drive
IRL1104LPBF产品属性
- 类型
描述
- 型号
IRL1104LPBF
- 功能描述
MOSFET 40V 1 N-CH HEXFET 8mOhms 45.3nC
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
25+ |
TO-262 |
32360 |
INFINEON/英飞凌全新特价IRL1104LPBF即刻询购立享优惠#长期有货 |
|||
IR |
24+ |
TO-262-3 |
480 |
||||
IR |
23+ |
TO-262-3 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
International Rectifier |
2022+ |
1 |
全新原装 货期两周 |
||||
INFINEON/英飞凌 |
2447 |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
INFINEON |
25+ |
TO-262 |
3000 |
就找我吧!--邀您体验愉快问购元件! |
|||
IR |
23+ |
TO-262 |
50000 |
全新原装正品现货,支持订货 |
|||
Infineon Technologies |
22+ |
TO2623 Long Leads I2Pak TO262A |
9000 |
原厂渠道,现货配单 |
|||
IR |
0810+ |
TO-262 |
4034 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
Infineon Technologies |
24+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
IRL1104LPBF 资料下载更多...
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