Advanced Process Technology Logic-Level Gate Drive

VDSS = 40V RDS(on) = 0.008Ω ID = 104A… Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and rugged

Logic-Level Gate Drive

VDSS = 40V RDS(on) = 0.008Ω ID = 104A… Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and rugged

Advanced Process Technology Logic-Level Gate Drive

HEXFET Power MOSFET

VDSS = 40V RDS(on) = 0.008Ω ID = 104A… Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and rugged

MMCX RIGHT ANGLE PLUG CRIMP

ELECTRICAL: IMPEDANCE: 50 OHMS. WITHSTAND VOLTAGE: 500V FREQUENCY RANGE: 0 - 6 GHz. VSWR: ≤ 1.50 @ 0-6 GHz. DURABILITY: ≥ 500 CYCLE CABLE RETENTION: > 10 POUNDS MISCELLANEOUS: APPLICATION: LOW-LOSS 100 SERIES, RG174, RG316, RG188, & RG179. COMPONENTS SHALL BE INDIVIDUALLY PACKAGED IN ACCO

TORQUE PRODUCTS

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CAROL STREAM, ILLINOIS 60188

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Heyco짰 Original Strain Relief Bushings

文件：137.33 Kbytes Page：1 Pages

Original Strain Relief Bushings

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