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IRL1104中文资料
IRL1104数据手册规格书PDF详情
VDSS = 40V
RDS(on) = 0.008Ω
ID = 104A
Description
Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
● Logic-Level Gate Drive
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
IRL1104产品属性
- 类型
描述
- 型号
IRL1104
- 功能描述
MOSFET N-CH 40V 104A TO-220AB
- RoHS
否
- 类别
分离式半导体产品 >> FET - 单
- 系列
HEXFET®
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
25+ |
TO-220 |
20300 |
INFINEON/英飞凌原装特价IRL1104PBF即刻询购立享优惠#长期有货 |
|||
IR |
24+ |
TO 263 |
161300 |
明嘉莱只做原装正品现货 |
|||
IR |
2450+ |
TO-263 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
IR |
24+ |
TO-220AB |
8866 |
||||
IR |
2015+ |
TO-220AB |
12500 |
全新原装,现货库存长期供应 |
|||
IR |
17+ |
TO-220 |
6200 |
||||
ir |
06+ |
TO-220 |
15000 |
原装库存 |
|||
IR |
16+ |
TO-220 |
10000 |
全新原装现货 |
|||
IR |
24+ |
TO220 |
5000 |
只做原装公司现货 |
|||
IR |
23+ |
TO-220-3 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
IRL1104 资料下载更多...
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