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IRL1104PBF中文资料
IRL1104PBF数据手册规格书PDF详情
VDSS = 40V
RDS(on) = 0.008Ω
ID = 104A
Description
Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
● Logic-Level Gate Drive
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
● Lead-Free
IRL1104PBF产品属性
- 类型
描述
- 型号
IRL1104PBF
- 功能描述
MOSFET 40V 1 N-CH HEXFET 8mOhms 45.3nC
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
25+ |
TO-220 |
20300 |
INFINEON/英飞凌原装特价IRL1104PBF即刻询购立享优惠#长期有货 |
|||
IR |
24+ |
TO-220-3 |
384 |
||||
IR |
23+ |
TO-220-3 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
International Rectifier |
2022+ |
1 |
全新原装 货期两周 |
||||
IR |
25+ |
TO-220 |
30000 |
代理全新原装现货,价格优势 |
|||
INFINEON |
25+ |
TO-220 |
3000 |
就找我吧!--邀您体验愉快问购元件! |
|||
IR |
21+ |
TO-220 |
10000 |
原装现货假一罚十 |
|||
Infineon Technologies |
22+ |
TO2203 |
9000 |
原厂渠道,现货配单 |
|||
IR |
11+ |
TO-220 |
3754 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
Infineon Technologies |
24+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
IRL1104PBF 资料下载更多...
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