位置：首页 > IC中文资料第4867页 > IRL110
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
HEXFET Power MOSFET VDSS = 40V RDS(on) = 0.008Ω ID = 104A Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and rugged | IRF |   | ||
Logic-Level Gate Drive VDSS = 40V RDS(on) = 0.008Ω ID = 104A Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and rugged | IRF | | ||
HEXFET Power MOSFET VDSS = 40V RDS(on) = 0.008Ω ID = 104A Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and rugged | IRF | | ||
Logic-Level Gate Drive VDSS = 40V RDS(on) = 0.008Ω ID = 104A Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and rugged | IRF | | ||
Logic-Level Gate Drive VDSS = 40V RDS(on) = 0.008Ω ID = 104A Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and rugged | IRF | | ||
Advanced Process Technology Logic-Level Gate Drive VDSS = 40V RDS(on) = 0.008Ω ID = 104A Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and rugged | IRF | | ||
HEXFET Power MOSFET VDSS = 40V RDS(on) = 0.008Ω ID = 104A Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and rugged | IRF | | ||
HEXFET Power MOSFET | Infineon 英飞凌 | | ||
Logic-Level Gate Drive | Infineon 英飞凌 | | ||
Advanced Process Technology Logic-Level Gate Drive | Infineon 英飞凌 | | ||
1.3 Watts Axial Leaded Zener Diodes VOLTAGE RANGE: 2.4 - 200V POWER: 1.3Wa t t s Features ● Complete Voltage Range 2.4 to 200 Volts ● High peak reverse power dissipation ● High reliability ● Low leakage current | SUNMATE 森美特 | | ||
Commercial 3/4inch (19mm) Diameter, 1 1/2 and 2 watt Wirewound Variable Resistor 文件：957.05 Kbytes Page：3 Pages | CTS 西迪斯 | | ||
Premier Supplier of Electronic Hardware 文件：5.0379 Mbytes Page：60 Pages | ABBATRON | | ||
PC board mounting and direct insert mounting available 文件：1.60394 Mbytes Page：3 Pages | HUAXINAN 华兴安 | | ||
3 Phase Hi-Torque DC Brushless Motor 文件：125.59 Kbytes Page：1 Pages | MOTIONKING | |
IRL110产品属性
- 类型
描述
- 型号
IRL110
- 功能描述
MOSFET N-CH 40V 104A TO-220AB
- RoHS
否
- 类别
分离式半导体产品 >> FET - 单
- 系列
HEXFET®
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
TO-263 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
IR |
24+ |
TO-263 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
IR |
23+ |
TO263 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
IR |
11+ |
TO263 |
1890 |
原装 |
|||
IR |
2450+ |
TO263 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
IR |
25+ |
TO263 |
30000 |
代理全新原装现货,价格优势 |
|||
原装正品 |
23+ |
TO-263 |
24662 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
Infineon Technologies |
23+ |
原装 |
8000 |
只做原装现货 |
|||
IR |
23+ |
TO-263 |
50000 |
全新原装正品现货,支持订货 |
|||
Infineon Technologies |
24+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
IRL110规格书下载地址
IRL110参数引脚图相关
- l101
- l100
- ku波段
- kt250
- kse13005
- ks20
- km710
- ka5q1265rf
- k9f1208
- k310
- k2698
- k233
- k2055
- k2010
- jumper
- jtag接口
- jk触发器
- j111
- j108
- isd1420
- IRL3716
- IRL3715
- IRL3714
- IRL3713
- IRL3502
- IRL3402
- IRL3303
- IRL3302
- IRL3215
- IRL3202
- IRL3103
- IRL3102
- IRL2910
- IRL2703
- IRL2505
- IRL2310
- IRL2203
- IRL220
- IRL1404SPBF
- IRL1404S
- IRL1404PBF
- IRL1404LPBF
- IRL1404L
- IRL1404
- IRL119P40
- IRL119P20
- IRL119P10
- IRL119F40
- IRL119F20
- IRL119F10
- IRL1104STRR
- IRL1104STRLPBF
- IRL1104STRL
- IRL1104SPBF
- IRL1104S
- IRL1104PBF
- IRL1104LPBF
- IRL1104L
- IRL1104
- IRL1004STRRPBF
- IRL1004STRR
- IRL1004STRLPBF
- IRL1004STRL
- IRL1004SPBF
- IRL1004S
- IRL1004PBF
- IRL1004LPBF
- IRL1004L
- IRL1004HR
- IRL1004
- IRL10
- IRL03 310X220X0.5
- IRL03 310X220X0.25
- IRL02AB300X200X0.05
- IRL02AB 300X200X0.05
- IRL02A200X200X2
- IRL02A200X200X1
- IRL02A100X100X1
- IRL02A 200X200X2
- IRKV105
- IRKU71
- IRKU41
- IRKU105
- IRKTF82
- IRKTF72
- IRKT92
- IRKT71
- IRKT70
- IRKT570
- IRKT55
- IRKT500
- IRKT41
- IRKT40
- IRKT330
- IRKT26
- IRKT250
- IRKT1O6
IRL110数据表相关新闻
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2020-1-12IRL2203NPBF 原装现货热卖！！！！
IRL2203NPBF 厂家：IR 封装：TO-220 现货热卖 原厂原包装，只做原装，假一赔万 !!! 欢迎致电 上海意淼张小姐 18301798078 021-61316368 QQ:2719102545
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2019-5-8
DdatasheetPDF页码索引
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