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IRG4PH50价格
参考价格：￥19.5862
型号：IRG4PH50KDPBF 品牌：International 备注：这里有IRG4PH50多少钱，2025年最近7天走势，今日出价，今日竞价，IRG4PH50批发/采购报价，IRG4PH50行情走势销售排行榜，IRG4PH50报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRG4PH50 | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A) Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ultrafast, ult | IRF International Rectifier |  |   |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.77V, @Vge=15V, Ic=24A) INSULATED GATE BIPOLAR TRANSISTOR Features ●High short circuit rating optimized for motor control, tsc=10µs, VCC = 720V, TJ= 125°C, VGE= 15V ●Combines low conduction losses with high switching speed ●Latest generation design provides tighter parameter distribution and higher efficien | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tsc =10μs, VCC = 720V, TJ = 125°C, VGE = 15V Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previous generatio | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR INSULATED GATE BIPOLAR TRANSISTOR | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A) Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations • Optimized for power conversion; SMPS, UPS and | IRF International Rectifier | | | |
Ultra Fast Speed IGBT FEATURES ·Ultrafast Optimizes for high operating frequencies ·High Current Capability ·High Input Impedance ·Fast Switching APPLICATIONS ·Highest efficiency available ·Optimaized for power conversion;UPS,SMPS and welding | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
IGBT DESCRIPTION ·Low Saturation Voltage:VCE(sat)=2.56V@IC=20A ·High Current Capability ·High Input Impedance ·Fast Switching APPLICATIONS ·Induction Heating,UPS ·AC & DC motor controls and general purpose inverters | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A) Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ultrafast, ult | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than previous generation | IRF International Rectifier | | | |
Ultra Fast Speed IGBT Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations • Optimized for power conversion; SMPS, UPS and | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.77V, @Vge=15V, Ic=24A) 文件：224.72 Kbytes Page：10 Pages | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：681.01 Kbytes Page：11 Pages | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：681.97 Kbytes Page：11 Pages | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：681.97 Kbytes Page：11 Pages | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR 文件：372.21 Kbytes Page：7 Pages | IRF International Rectifier | | | |
封装/外壳：TO-247-3 包装：卷带（TR） 描述：IGBT 1200V 45A 200W TO247AC 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 |  | | |
INSULATED GATE BIPOLAR TRANSISTOR 文件：372.21 Kbytes Page：7 Pages | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=1.47V, @Vge=15V, Ic=33A) 文件：130.71 Kbytes Page：8 Pages | IRF International Rectifier | | | |
封装/外壳：TO-247-3 包装：管件 描述：IGBT 1200V 57A TO247AD 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | | |
INSULATED GATE BIPOLAR TRANSISTOR 文件：225.55 Kbytes Page：8 Pages | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR 文件：225.55 Kbytes Page：8 Pages | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR 文件：225.55 Kbytes Page：8 Pages | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR 文件：232.76 Kbytes Page：8 Pages | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR 文件：232.76 Kbytes Page：8 Pages | IRF International Rectifier | | | |
Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages | IRF International Rectifier | | | |
Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：687.13 Kbytes Page：11 Pages | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：687.13 Kbytes Page：11 Pages | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR 文件：628.16 Kbytes Page：9 Pages | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR 文件：628.16 Kbytes Page：9 Pages | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR Features ● Standard: Optimized for minimum saturation voltage and low operating frequencies ( | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A) Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ultrafast, ult | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.77V, @Vge=15V, Ic=24A) 文件：224.72 Kbytes Page：10 Pages | IRF International Rectifier | | |
IRG4PH50产品属性
- 类型
描述
- 型号
IRG4PH50
- 制造商
IRF
- 制造商全称
International Rectifier
- 功能描述
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A)
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
24+ |
TO-247 |
924 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
INFINEON/英飞凌 |
25+ |
TO-247 |
32360 |
INFINEON/英飞凌全新特价IRG4PH50SPBF即刻询购立享优惠#长期有货 |
|||
IR |
24+ |
TO 247 |
161520 |
明嘉莱只做原装正品现货 |
|||
IR |
01+ |
TO-247 |
1950 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
IR |
2430+ |
TO247 |
8540 |
只做原装正品假一赔十为客户做到零风险!! |
|||
IR |
01+ |
TO-247 |
763 |
||||
IR |
23+ |
TO-247 |
22000 |
原装现货假一罚十 |
|||
IR |
2023+ |
TO-247 |
5800 |
进口原装,现货热卖 |
|||
IR |
23+ |
TO-247 |
65400 |
||||
INTERNATIONA |
05+ |
原厂原装 |
4366 |
只做全新原装真实现货供应 |
IRG4PH50芯片相关品牌
IRG4PH50规格书下载地址
IRG4PH50参数引脚图相关
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- ku波段
- kt250
- kse13005
- ks20
- km710
- ka5q1265rf
- k9f1208
- k310
- k2698
- k233
- k2055
- k2010
- jumper
- jtag接口
- jk触发器
- j111
- j108
- isd1420
- IRH7130
- IRH7054
- IRH60
- IRH4230
- IRH4150
- IRH4054
- IRH3230
- IRH3150
- IRH3054
- IRGPH50
- IRGPH40
- IRGPH20
- IRGPC40
- IRGBF30
- IRGBF20
- IRGBC40
- IRGBC30
- IRGBC20
- IRGB430
- IRGB420
- IRG4RC20FTRPBF
- IRG4RC20FPBF
- IRG4RC10UTRPBF
- IRG4RC10UDTRLP
- IRG4RC10UDPBF
- IRG4RC10SDTRPBF
- IRG4RC10SDPBF
- IRG4RC10KDTRPBF
- IRG4PSH71UDPBF
- IRG4PSH71KPBF
- IRG4PSH71KDPBF
- IRG4PSC71UPBF
- IRG4PSC71UDPBF
- IRG4PSC71KPBF
- IRG4PSC71KDPBF
- IRG4PH50UDPBF
- IRG4PH50SPBF
- IRG4PH50S-EPBF
- IRG4PH50KPBF
- IRG4PH50KDPBF
- IRG4PH40UPBF
- IRG4PH40UDPBF
- IRG4PH40UD-EPBF
- IRG4PH40UD2-EP
- IRG4PH40KDPBF
- IRG4PH30KPBF
- IRG4PH30KDPBF
- IRG4PH20KPBF
- IRG4PH20KDPBF
- IRG4PF50WPBF
- IRG4PF50WDPBF
- IRG4PC60UPBF
- IRG4PC60FPBF
- IRG4PC50WPBF
- IRG4PC50UPBF
- IRG4PC50UDPBF
- IRG4PC50UD-EPBF
- IRG4PC50SPBF
- IRG4PC50SDPBF
- IRG4PC50KPBF
- IRFZ48Z
- IRFZ48V
- IRFZ48S
- IRFZ48R
- IRFZ48N
- IRFZ48L
- IRFZ48
- IRFZ46Z
- IRFZ46S
- IRFZ46N
- IRFZ46L
- IRFZ46
- IRFZ45
- IRFZ44Z
- IRFZ44V
- IRFZ44S
- IRFZ44R
- IRFZ44N
- IRFZ44L
- IRFZ44E
IRG4PH50数据表相关新闻
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IRGP4266D-EPBF
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属性 参数值 商品目录 IGBT管 集电极电流（Ic）（最大值） 55A 集射极击穿电压（最大值） 600V 类型 - 不同 Vge，Ic 时的 Vce（on） 2.3V @ 15V，27A 栅极阈值电压-VGE(th) 6V @ 250uA
2020-10-27IRGB15B60KDPBF IR全新正品现货
原装正品现货热卖中，焕盛达-专注原装 用芯服务；
2020-7-17IRKD7104，IRKD71-04，IRKD71-06，IRKD71-08，IRKD71-16，IRKD91-04
IRKD7104，IRKD71-04，IRKD71-06，IRKD71-08，IRKD71-16，IRKD91-04
2020-1-12
DdatasheetPDF页码索引
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