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IRG4PH50S-EPBF价格
参考价格：￥27.1999
型号：IRG4PH50S-EPBF 品牌：INTERNATIONAL 备注：这里有IRG4PH50S-EPBF多少钱，2025年最近7天走势，今日出价，今日竞价，IRG4PH50S-EPBF批发/采购报价，IRG4PH50S-EPBF行情走势销售排行榜，IRG4PH50S-EPBF报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRG4PH50S-EPBF | INSULATED GATE BIPOLAR TRANSISTOR 文件：225.55 Kbytes Page：8 Pages | IRF |   | |
IRG4PH50S-EPBF | INSULATED GATE BIPOLAR TRANSISTOR 文件：225.55 Kbytes Page：8 Pages | IRF | | |
IRG4PH50S-EPBF | 封装/外壳：TO-247-3 包装：管件 描述：IGBT 1200V 57A TO247AD 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | Infineon 英飞凌 | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A) Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ultrafast, ult | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR 文件：225.55 Kbytes Page：8 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.77V, @Vge=15V, Ic=24A) INSULATED GATE BIPOLAR TRANSISTOR Features ●High short circuit rating optimized for motor control, tsc=10µs, VCC = 720V, TJ= 125°C, VGE= 15V ●Combines low conduction losses with high switching speed ●Latest generation design provides tighter parameter distribution and higher efficien | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR Features ● Standard: Optimized for minimum saturation voltage and low operating frequencies ( | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A) Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ultrafast, ult | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.77V, @Vge=15V, Ic=24A) 文件：224.72 Kbytes Page：10 Pages | IRF | |
IRG4PH50S-EPBF产品属性
- 类型
描述
- 型号
IRG4PH50S-EPBF
- 功能描述
IGBT 晶体管 1200V DC-1kHz w/ exetended lead
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
21+ |
TO3 |
1625 |
只做原装正品,不止网上数量,欢迎电话微信查询! |
|||
INFINEON/英飞凌 |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
IRF |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
|||
IR |
2018+ |
TO-247 |
11256 |
只做进口原装正品!假一赔十! |
|||
VISHAY |
24+ |
TO-247 |
12000 |
VISHAY专营进口原装现货假一赔十 |
|||
IR |
23+ |
TO-247 |
675675 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
IR原装 |
25+23+ |
TO-247 |
19102 |
绝对原装正品全新进口深圳现货 |
|||
INFINEON |
24+ |
TO247 |
8500 |
原厂原包原装公司现货,假一赔十,低价出售 |
|||
IR |
24+ |
TO-247-3 |
319 |
||||
IR原装 |
TO-247 |
3200 |
原装长期供货! |
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IRG4PH50S-EPBF规格书下载地址
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属性 参数值 商品目录 IGBT管 集电极电流（Ic）（最大值） 55A 集射极击穿电压（最大值） 600V 类型 - 不同 Vge，Ic 时的 Vce（on） 2.3V @ 15V，27A 栅极阈值电压-VGE(th) 6V @ 250uA
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DdatasheetPDF页码索引
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