型号 功能描述 生产厂家&企业 LOGO 操作
IRG4PH50UPBF

UltraFastSpeedIGBT

Features •UltraFast:Optimizedforhighoperating frequenciesupto40kHzinhardswitching, >200kHzinresonantmode •NewIGBTdesignprovidestighter parameterdistributionandhigherefficiencythan previousgenerations •Optimizedforpowerconversion;SMPS,UPS and

IRF

International Rectifier

IRF
IRG4PH50UPBF

封装/外壳:TO-247-3 包装:卷带(TR) 描述:IGBT 1200V 45A 200W TO247AC 分立半导体产品 晶体管 - UGBT、MOSFET - 单

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

Infineon
IRG4PH50UPBF

INSULATEDGATEBIPOLARTRANSISTOR

文件:628.16 Kbytes Page:9 Pages

IRF

International Rectifier

IRF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=1200V,Vce(on)typ.=2.78V,@Vge=15V,Ic=24A)

Features •UltraFast:Optimizedforhighoperating frequenciesupto40kHzinhardswitching, >200kHzinresonantmode •NewIGBTdesignprovidestighter parameterdistributionandhigherefficiencythan previousgenerations •IGBTco-packagedwithHEXFREDTMultrafast, ult

IRF

International Rectifier

IRF

INSULATEDGATEBIPOLARTRANSISTOR

文件:628.16 Kbytes Page:9 Pages

IRF

International Rectifier

IRF

INSULATEDGATEBIPOLARTRANSISTOR(Vces=1200V,Vce(on)typ.=2.77V,@Vge=15V,Ic=24A)

INSULATEDGATEBIPOLARTRANSISTOR Features ●Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,VCC=720V,TJ=125°C,VGE=15V ●Combineslowconductionlosseswithhighswitchingspeed ●Latestgenerationdesignprovidestighterparameterdistributionandhigherefficien

IRF

International Rectifier

IRF

INSULATEDGATEBIPOLARTRANSISTOR

Features ●Standard:Optimizedforminimumsaturation voltageandlowoperatingfrequencies(

IRF

International Rectifier

IRF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=1200V,Vce(on)typ.=2.78V,@Vge=15V,Ic=24A)

Features •UltraFast:Optimizedforhighoperating frequenciesupto40kHzinhardswitching, >200kHzinresonantmode •NewIGBTdesignprovidestighter parameterdistributionandhigherefficiencythan previousgenerations •IGBTco-packagedwithHEXFREDTMultrafast, ult

IRF

International Rectifier

IRF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=1200V,Vce(on)typ.=2.77V,@Vge=15V,Ic=24A)

文件:224.72 Kbytes Page:10 Pages

IRF

International Rectifier

IRF

IRG4PH50UPBF产品属性

  • 类型

    描述

  • 型号

    IRG4PH50UPBF

  • 功能描述

    IGBT 晶体管 1200V ULTRAFAST 5-40KHZ DSCRETE IGBT

  • RoHS

  • 制造商

    Fairchild Semiconductor

  • 配置

    集电极—发射极最大电压

  • VCEO

    650 V

  • 集电极—射极饱和电压

    2.3 V

  • 栅极/发射极最大电压

    20 V 在25

  • C的连续集电极电流

    150 A

  • 栅极—射极漏泄电流

    400 nA

  • 功率耗散

    187 W

  • 封装/箱体

    TO-247

  • 封装

    Tube

更新时间:2025-5-18 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR(国际整流器)
24+
NA/
8735
原厂直销,现货供应,账期支持!
Infineon/英飞凌
21+
TO-247AC
6820
只做原装,质量保证
IR
24+
TO-247-3
109
INFINEON
24+
TO-247
9000
只做原装正品 有挂有货 假一赔十
IR
17+
TO-247
6200
100%原装正品现货
Infineon/英飞凌
24+
TO-247AC
25000
原装正品,假一赔十!
INFINEON/英飞凌
24+
NA
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
IR
1923+
TO-247
5000
正品原装品质假一赔十
Infineon
24+
NA
3000
进口原装正品优势供应
IR
13+
TO-247
2
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