IRG4PH50UDPBF价格

参考价格:¥19.7300

型号:IRG4PH50UDPBF 品牌:International 备注:这里有IRG4PH50UDPBF多少钱,2026年最近7天走势,今日出价,今日竞价,IRG4PH50UDPBF批发/采购报价,IRG4PH50UDPBF行情走势销售排行榜,IRG4PH50UDPBF报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRG4PH50UDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than previous generation

IRF

IRG4PH50UDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件:687.13 Kbytes Page:11 Pages

IRF

IRG4PH50UDPBF

封装/外壳:TO-247-3 包装:管件 描述:IGBT 1200V 45A 200W TO247AC 分立半导体产品 晶体管 - UGBT、MOSFET - 单

INFINEON

英飞凌

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A)

Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ultrafast, ult

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件:687.13 Kbytes Page:11 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.77V, @Vge=15V, Ic=24A)

INSULATED GATE BIPOLAR TRANSISTOR Features ●High short circuit rating optimized for motor control, tsc=10µs, VCC = 720V, TJ= 125°C, VGE= 15V ●Combines low conduction losses with high switching speed ●Latest generation design provides tighter parameter distribution and higher efficien

IRF

INSULATED GATE BIPOLAR TRANSISTOR

Features ● Standard: Optimized for minimum saturation voltage and low operating frequencies (

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A)

Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ultrafast, ult

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.77V, @Vge=15V, Ic=24A)

文件:224.72 Kbytes Page:10 Pages

IRF

IRG4PH50UDPBF产品属性

  • 类型

    描述

  • 型号

    IRG4PH50UDPBF

  • 功能描述

    IGBT 晶体管 1200V ULTRAFAST 5-40 KHZ COPACK IGBT

  • RoHS

  • 制造商

    Fairchild Semiconductor

  • 配置

    集电极—发射极最大电压

  • VCEO

    650 V

  • 集电极—射极饱和电压

    2.3 V

  • 栅极/发射极最大电压

    20 V 在25

  • C的连续集电极电流

    150 A

  • 栅极—射极漏泄电流

    400 nA

  • 功率耗散

    187 W

  • 封装/箱体

    TO-247

  • 封装

    Tube

更新时间:2026-3-2 10:19:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
24+
TO-247
47186
郑重承诺只做原装进口现货
INFINEON
25+
TO-247
3000
原厂原装,价格优势
IR
25+
TO247
10000
原装现货假一罚十
IR
23+
TO-247
12000
原装正品假一罚百!可开增票!
24+
N/A
76000
一级代理-主营优势-实惠价格-不悔选择
Infineon/英飞凌
21+
TO-247(AC)
6820
只做原装,质量保证
Infineon
24+
NA
3044
进口原装正品优势供应
INFINEON
25+
TO-247
326
就找我吧!--邀您体验愉快问购元件!
IR
26+
TO-247
8238
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
IR
2023+
TO-247
2000
一级代理优势现货,全新正品直营店

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