IRG4PH50KPBF价格

参考价格:¥17.2194

型号:IRG4PH50KPBF 品牌:International 备注:这里有IRG4PH50KPBF多少钱,2025年最近7天走势,今日出价,今日竞价,IRG4PH50KPBF批发/采购报价,IRG4PH50KPBF行情走势销售排行榜,IRG4PH50KPBF报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRG4PH50KPBF

INSULATED GATE BIPOLAR TRANSISTOR

Features • High short circuit rating optimized for motor control, tsc =10μs, VCC = 720V, TJ = 125°C, VGE = 15V Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previous generatio

IRF

IRG4PH50KPBF

INSULATED GATE BIPOLAR TRANSISTOR

文件:372.21 Kbytes Page:7 Pages

IRF

IRG4PH50KPBF

封装/外壳:TO-247-3 包装:卷带(TR) 描述:IGBT 1200V 45A 200W TO247AC 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Infineon

英飞凌

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A)

Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ultrafast, ult

IRF

INSULATED GATE BIPOLAR TRANSISTOR

文件:372.21 Kbytes Page:7 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.77V, @Vge=15V, Ic=24A)

INSULATED GATE BIPOLAR TRANSISTOR Features ●High short circuit rating optimized for motor control, tsc=10µs, VCC = 720V, TJ= 125°C, VGE= 15V ●Combines low conduction losses with high switching speed ●Latest generation design provides tighter parameter distribution and higher efficien

IRF

INSULATED GATE BIPOLAR TRANSISTOR

Features ● Standard: Optimized for minimum saturation voltage and low operating frequencies (

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A)

Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ultrafast, ult

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.77V, @Vge=15V, Ic=24A)

文件:224.72 Kbytes Page:10 Pages

IRF

IRG4PH50KPBF产品属性

  • 类型

    描述

  • 型号

    IRG4PH50KPBF

  • 功能描述

    IGBT 晶体管 1200V ULTRAFAST 4-20KHZ DSCRETE IGBT

  • RoHS

  • 制造商

    Fairchild Semiconductor

  • 配置

    集电极—发射极最大电压

  • VCEO

    650 V

  • 集电极—射极饱和电压

    2.3 V

  • 栅极/发射极最大电压

    20 V 在25

  • C的连续集电极电流

    150 A

  • 栅极—射极漏泄电流

    400 nA

  • 功率耗散

    187 W

  • 封装/箱体

    TO-247

  • 封装

    Tube

更新时间:2025-10-4 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR(国际整流器)
24+
NA/
8735
原厂直销,现货供应,账期支持!
IR
24+
TO-247-3
1273
IR
25+
TO-3P
18000
原厂直接发货进口原装
IR
23+
TO-3P
5000
原装正品,假一罚十
IR
23+
TO247AC
6000
原装正品,支持实单
Infineon Technologies
23+
原装
8000
只做原装现货
Infineon Technologies
23+
原装
7000
INFINEON/英飞凌
2447
SMD
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
IR(国际整流器)
25+
封装
500000
源自原厂成本,高价回收工厂呆滞
IR
24+/25+
63
原装正品现货库存价优

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