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IRG4PH50KPBF价格
参考价格：￥17.2194
型号：IRG4PH50KPBF 品牌：International 备注：这里有IRG4PH50KPBF多少钱，2026年最近7天走势，今日出价，今日竞价，IRG4PH50KPBF批发/采购报价，IRG4PH50KPBF行情走势销售排行榜，IRG4PH50KPBF报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRG4PH50KPBF | INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tsc =10μs, VCC = 720V, TJ = 125°C, VGE = 15V Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previous generatio | IRF |   | |
IRG4PH50KPBF | INSULATED GATE BIPOLAR TRANSISTOR 文件：372.21 Kbytes Page：7 Pages | IRF | | |
IRG4PH50KPBF | 封装/外壳：TO-247-3 包装：卷带（TR） 描述：IGBT 1200V 45A 200W TO247AC 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | INFINEON 英飞凌 | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A) Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ultrafast, ult | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR 文件：372.21 Kbytes Page：7 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.77V, @Vge=15V, Ic=24A) INSULATED GATE BIPOLAR TRANSISTOR Features ●High short circuit rating optimized for motor control, tsc=10µs, VCC = 720V, TJ= 125°C, VGE= 15V ●Combines low conduction losses with high switching speed ●Latest generation design provides tighter parameter distribution and higher efficien | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR Features ● Standard: Optimized for minimum saturation voltage and low operating frequencies ( | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A) Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ultrafast, ult | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.77V, @Vge=15V, Ic=24A) 文件：224.72 Kbytes Page：10 Pages | IRF | |
IRG4PH50KPBF产品属性
- 类型
描述
- 型号
IRG4PH50KPBF
- 功能描述
IGBT 晶体管 1200V ULTRAFAST 4-20KHZ DSCRETE IGBT
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IOR |
12+ |
TO247 |
50 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
IR |
2025+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
IR |
24+ |
TO-247-3 |
1273 |
||||
Infineon Technologies |
22+ |
TO247AC |
9000 |
原厂渠道,现货配单 |
|||
ir |
25+ |
500000 |
行业低价,代理渠道 |
||||
INFINEON/英飞凌 |
2447 |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
IOR |
22+ |
TO247 |
20000 |
公司只做原装 品质保障 |
|||
Infineon Technologies |
23+ |
原装 |
8000 |
只做原装现货 |
|||
Infineon Technologies |
23+ |
原装 |
7000 |
||||
IR(国际整流器) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
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IRG4PH50KPBF规格书下载地址
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属性 参数值 商品目录 IGBT管 集电极电流（Ic）（最大值） 55A 集射极击穿电压（最大值） 600V 类型 - 不同 Vge，Ic 时的 Vce（on） 2.3V @ 15V，27A 栅极阈值电压-VGE(th) 6V @ 250uA
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DdatasheetPDF页码索引
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