IRG4PH50U价格

参考价格:¥19.7300

型号:IRG4PH50UDPBF 品牌:International 备注:这里有IRG4PH50U多少钱,2025年最近7天走势,今日出价,今日竞价,IRG4PH50U批发/采购报价,IRG4PH50U行情走势销售排行榜,IRG4PH50U报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRG4PH50U

INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A)

Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations • Optimized for power conversion; SMPS, UPS and

IRF

IRG4PH50U

Ultra Fast Speed IGBT

FEATURES ·Ultrafast Optimizes for high operating frequencies ·High Current Capability ·High Input Impedance ·Fast Switching APPLICATIONS ·Highest efficiency available ·Optimaized for power conversion;UPS,SMPS and welding

ISC

无锡固电

IRG4PH50U

Fit Rate / Equivalent Device Hours

文件:98.39 Kbytes Page:35 Pages

IRF

IRG4PH50U

1200V 超快 5-40 kHz 分立 IGBT,采用 TO-247AC 封装

Infineon

英飞凌

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A)

Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ultrafast, ult

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A)

Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ultrafast, ult

IRF

IGBT

DESCRIPTION ·Low Saturation Voltage:VCE(sat)=2.56V@IC=20A ·High Current Capability ·High Input Impedance ·Fast Switching APPLICATIONS ·Induction Heating,UPS ·AC & DC motor controls and general purpose inverters

ISC

无锡固电

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than previous generation

IRF

Ultra Fast Speed IGBT

Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations • Optimized for power conversion; SMPS, UPS and

IRF

Fit Rate / Equivalent Device Hours

文件:98.39 Kbytes Page:35 Pages

IRF

1200V 超快 5-40 kHz Copack IGBT,采用 TO-247AC 封装

Infineon

英飞凌

封装/外壳:TO-247-3 包装:管件 描述:IGBT 1200V 45A 200W TO247AC 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Infineon

英飞凌

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件:687.13 Kbytes Page:11 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件:687.13 Kbytes Page:11 Pages

IRF

封装/外壳:TO-247-3 包装:卷带(TR) 描述:IGBT 1200V 45A 200W TO247AC 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Infineon

英飞凌

INSULATED GATE BIPOLAR TRANSISTOR

文件:628.16 Kbytes Page:9 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR

文件:628.16 Kbytes Page:9 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.77V, @Vge=15V, Ic=24A)

INSULATED GATE BIPOLAR TRANSISTOR Features ●High short circuit rating optimized for motor control, tsc=10µs, VCC = 720V, TJ= 125°C, VGE= 15V ●Combines low conduction losses with high switching speed ●Latest generation design provides tighter parameter distribution and higher efficien

IRF

INSULATED GATE BIPOLAR TRANSISTOR

Features ● Standard: Optimized for minimum saturation voltage and low operating frequencies (

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A)

Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ultrafast, ult

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.77V, @Vge=15V, Ic=24A)

文件:224.72 Kbytes Page:10 Pages

IRF

IRG4PH50U产品属性

  • 类型

    描述

  • 型号

    IRG4PH50U

  • 制造商

    International Rectifier

  • 功能描述

    Trans IGBT Chip N-CH 1.2KV 45A 3-Pin(3+Tab) TO-247AC

  • 制造商

    International Rectifier

  • 功能描述

    IGBT TO-247

更新时间:2025-10-5 9:40:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Infineon/英飞凌
24+
TO-247(AC)
8000
只做原装,欢迎询价,量大价优
IR
24+
TO-247
4500
只做原装正品现货 欢迎来电查询15919825718
IR
25+
TO-247
6500
十七年专营原装现货一手货源,样品免费送
IR
23+
TO-247
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
IR
TO-247
5900
一级代理 原装正品假一罚十价格优势长期供货
VISHAY
24+
TO-247
12000
VISHAY专营进口原装现货假一赔十
IR
23+
TO-247
65400
IR
24+
TO-247
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
IR
01+
TO247
216
原装现货
IR
06+
TO-247
500
自己公司全新库存绝对有货

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