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IRG4PH50S价格
参考价格：￥27.1999
型号：IRG4PH50S-EPBF 品牌：INTERNATIONAL 备注：这里有IRG4PH50S多少钱，2025年最近7天走势，今日出价，今日竞价，IRG4PH50S批发/采购报价，IRG4PH50S行情走势销售排行榜，IRG4PH50S报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRG4PH50S | INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=1.47V, @Vge=15V, Ic=33A) 文件：130.71 Kbytes Page：8 Pages | IRF |   | |
IRG4PH50S | 1200V DC-1 kHz（标准）分立 IGBT，采用 TO-247AC 封装 | Infineon 英飞凌 | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A) Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ultrafast, ult | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR INSULATED GATE BIPOLAR TRANSISTOR | IRF | | ||
1200V DC-1 kHz (Standard) Discrete IGBT in a TO-247AD package | Infineon 英飞凌 | | ||
INSULATED GATE BIPOLAR TRANSISTOR 文件：225.55 Kbytes Page：8 Pages | IRF | | ||
封装/外壳：TO-247-3 包装：管件 描述：IGBT 1200V 57A TO247AD 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | Infineon 英飞凌 | | ||
INSULATED GATE BIPOLAR TRANSISTOR 文件：225.55 Kbytes Page：8 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR 文件：225.55 Kbytes Page：8 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR 文件：232.76 Kbytes Page：8 Pages | IRF | | ||
封装/外壳：TO-247-3 包装：卷带（TR） 描述：IGBT 1200V 57A 200W TO247AC 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | Infineon 英飞凌 | | ||
INSULATED GATE BIPOLAR TRANSISTOR 文件：232.76 Kbytes Page：8 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.77V, @Vge=15V, Ic=24A) INSULATED GATE BIPOLAR TRANSISTOR Features ●High short circuit rating optimized for motor control, tsc=10µs, VCC = 720V, TJ= 125°C, VGE= 15V ●Combines low conduction losses with high switching speed ●Latest generation design provides tighter parameter distribution and higher efficien | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR Features ● Standard: Optimized for minimum saturation voltage and low operating frequencies ( | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A) Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ultrafast, ult | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.77V, @Vge=15V, Ic=24A) 文件：224.72 Kbytes Page：10 Pages | IRF | |
IRG4PH50S产品属性
- 类型
描述
- 型号
IRG4PH50S
- 制造商
International Rectifier
- 功能描述
IGBT TO-247
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
22+ |
TO-247 |
100000 |
代理渠道/只做原装/可含税 |
|||
IR |
24+ |
NA/ |
600 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
IR |
24+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
|||
INFINEON/英飞凌 |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
IR |
23+ |
TO-247 |
22000 |
原装现货假一罚十 |
|||
IR原装 |
25+23+ |
TO-247 |
19102 |
绝对原装正品全新进口深圳现货 |
|||
IR/国际整流器 |
21+ |
TO-247 |
10000 |
只做原装,质量保证 |
|||
INFINEON/英飞凌 |
24+ |
TO-247 |
244 |
只做原厂渠道 可追溯货源 |
|||
IR |
24+ |
TO-247-3 |
319 |
||||
IR/国际整流器 |
23+ |
TO-247 |
12800 |
正规渠道,只有原装! |
IRG4PH50S芯片相关品牌
IRG4PH50S规格书下载地址
IRG4PH50S参数引脚图相关
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- IRFZ48Z
- IRFZ48V
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- IRFZ46Z
- IRFZ46S
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- IRFZ46
- IRFZ45
- IRFZ44Z
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- IRFZ44S
- IRFZ44R
- IRFZ44N
- IRFZ44L
- IRFZ44E
IRG4PH50S数据表相关新闻
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属性 参数值 商品目录 IGBT管 集电极电流（Ic）（最大值） 55A 集射极击穿电压（最大值） 600V 类型 - 不同 Vge，Ic 时的 Vce（on） 2.3V @ 15V，27A 栅极阈值电压-VGE(th) 6V @ 250uA
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DdatasheetPDF页码索引
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