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IRG4PC30价格
参考价格：￥8.3270
型号：IRG4PC30FDPBF 品牌：International 备注：这里有IRG4PC30多少钱，2025年最近7天走势，今日出价，今日竞价，IRG4PC30批发/采购报价，IRG4PC30行情走势销售排行榜，IRG4PC30报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRG4PC30 | INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) Fast Speed IGBT Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package Benefits • Gener | IRF |   | |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) Fast Speed IGBT Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package Benefits • Gener | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) Fast CoPack IGBT Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-sof | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack 1GBT VCES = 600V VCE(on) typ. = 1.59V @VGE = 15V, IC = 17A Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packa | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) Short Circuit Rated UltraFast IGBT Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher effi | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) Short Circuit Rated UltraFast IGBT Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Tighter parameter distribution and higher efficiency than previous gen | IRF | | ||
INSULATED GATE BIPOALR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tsc =10μs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previo | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A) Standard Speed IGBT Features • Standard: Optimized for minimum saturation voltage and low operating frequencies ( | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A) UltraFast Speed IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package Benefits • | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A) UltraFast CoPack IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ult | IRF | | ||
IGBT DESCRIPTION · Low Saturation Voltage · Anti-Parallel Ultra Fast Diode · Avalanche Capability · International Standard Package APPLICATIONS · Synchronous Rectification in SMPS · Automotive Chargers · UPS,PFC · High Voltage Auxiliaries · Welding Machines | ISC 无锡固电 | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra- | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT UltraFast Speed IGBT Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides higher efficiency than Generation 3 • Industry standard TO-220AB package Benefits • Genera | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A) Features • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50 reduction of Eoff parameter • Low IGBT conduction losses • Latest-generation IGBT design and c | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50 reduction of Eoff parameter • Low IGBT conduction losses • Latest-generation IGBT design and c | IRF | | ||
Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages | IRF | | ||
Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：385.52 Kbytes Page：11 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：385.52 Kbytes Page：11 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT 文件：273.67 Kbytes Page：9 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR 文件：274.63 Kbytes Page：9 Pages | IRF | | ||
封装/外壳：TO-247-3 包装：卷带（TR） 描述：IGBT 600V 31A 100W TO247AC 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | Infineon 英飞凌 | | ||
INSULATED GATE BIPOLAR TRANSISTOR 文件：274.63 Kbytes Page：9 Pages | IRF | | ||
Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages | IRF | | ||
封装/外壳：TO-247-3 包装：管件 描述：IGBT 600V 28A 100W TO247AC 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | Infineon 英飞凌 | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：346.22 Kbytes Page：11 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：346.22 Kbytes Page：11 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR 文件：261.149 Kbytes Page：9 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR 文件：261.149 Kbytes Page：9 Pages | IRF | | ||
Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR 文件：250.67 Kbytes Page：9 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR 文件：250.67 Kbytes Page：9 Pages | IRF | | ||
Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages | IRF | | ||
Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：390.82 Kbytes Page：11 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：390.82 Kbytes Page：11 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR 文件：274.59 Kbytes Page：9 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR 文件：274.59 Kbytes Page：9 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR 文件：255.35 Kbytes Page：9 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR 文件：255.35 Kbytes Page：9 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) Fast Speed IGBT Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package Benefits • Gener | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：390.82 Kbytes Page：11 Pages | IRF | |
IRG4PC30产品属性
- 类型
描述
- 型号
IRG4PC30
- 制造商
IRF
- 制造商全称
International Rectifier
- 功能描述
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR/国际整流器 |
21+ |
TO-247 |
10000 |
只做原装,质量保证 |
|||
IR |
23+ |
TO-247 |
65400 |
||||
IR |
23+ |
TO-247 |
35890 |
||||
IR |
24+ |
TO-247 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
IR |
18+ |
TO-247 |
85600 |
保证进口原装可开17%增值税发票 |
|||
ir |
2023+ |
原厂封装 |
50000 |
原装现货 |
|||
IR |
1822+ |
TO-247AC |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
Infineon(英飞凌) |
2447 |
TO-247(AC) |
105000 |
25片/管一级代理专营品牌!原装正品,优势现货,长期 |
|||
IR |
23+ |
TO-247AC |
7300 |
专注配单,只做原装进口现货 |
|||
Infineon Technologies |
23+ |
原装 |
7000 |
IRG4PC30规格书下载地址
IRG4PC30参数引脚图相关
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- k2055
- k2010
- jumper
- jtag接口
- jk触发器
- j111
- j108
- isd1420
- IRH7130
- IRH7054
- IRH60
- IRH4230
- IRH4150
- IRH4054
- IRH3230
- IRH3150
- IRH3054
- IRGPH50
- IRGPH40
- IRGPH20
- IRGPC40
- IRGBF30
- IRGBF20
- IRGBC40
- IRGBC30
- IRGBC20
- IRGB430
- IRGB420
- IRG4PC50KDPBF
- IRG4PC50FPBF
- IRG4PC50F-EPBF
- IRG4PC50FDPBF
- IRG4PC50FD-EPBF
- IRG4PC40WPBF
- IRG4PC40UPBF
- IRG4PC40UDPBF
- IRG4PC40UD-EPBF
- IRG4PC40SPBF
- IRG4PC40KPBF
- IRG4PC40FPBF
- IRG4PC40FDPBF
- IRG4PC30WPBF
- IRG4PC30UDPBF
- IRG4PC30SPBF
- IRG4PC30KPBF
- IRG4PC30KDPBF
- IRG4PC30FPBF
- IRG4PC30FDPBF
- IRG4IBC30WPBF
- IRG4IBC30UDPBF
- IRG4IBC30SPBF
- IRG4IBC30KDPBF
- IRG4IBC20WPBF
- IRG4IBC20UDPBF
- IRG4IBC20KDPBF
- IRG4IBC20FDPBF
- IRG4BH20K-STRLP
- IRG4BH20K-SPBF
- IRG4BH20K-LPBF
- IRG4BC40W-STRRP
- IRG4BC40W-SPBF
- IRG4BC40WPBF
- IRG4BC40W-LPBF
- IRG4BC40UPBF
- IRG4BC40SPBF
- IRG4BC40KPBF
- IRG4BC30W-STRLP
- IRG4BC30W-SPBF
- IRFZ48Z
- IRFZ48V
- IRFZ48S
- IRFZ48R
- IRFZ48N
- IRFZ48L
- IRFZ48
- IRFZ46Z
- IRFZ46S
- IRFZ46N
- IRFZ46L
- IRFZ46
- IRFZ45
- IRFZ44Z
- IRFZ44V
- IRFZ44S
- IRFZ44R
- IRFZ44N
- IRFZ44L
- IRFZ44E
IRG4PC30数据表相关新闻
IRFZ44NSTRLPBF 原装正品.仓库现货
华富芯深圳智能科技 有限公司
2021-11-24IRG4PC40KPBF 原装正品.仓库现货
华富芯深圳智能 科技有限公司
2021-11-23IRFZ44NPBF原装现货
IRFZ44NPBF原装正品
2021-8-10IRG4PC50WPBF
属性 参数值 商品目录 IGBT管 集电极电流（Ic）（最大值） 55A 集射极击穿电压（最大值） 600V 类型 - 不同 Vge，Ic 时的 Vce（on） 2.3V @ 15V，27A 栅极阈值电压-VGE(th) 6V @ 250uA
2020-10-27IRGB15B60KDPBF IR全新正品现货
原装正品现货热卖中，焕盛达-专注原装 用芯服务；
2020-7-17IRFZ44NPBF选拓亿芯电子，国际电子元器件供应商
元器件优质供应
2019-11-1
DdatasheetPDF页码索引
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