IRG4PC30价格

参考价格:¥8.3270

型号:IRG4PC30FDPBF 品牌:International 备注:这里有IRG4PC30多少钱,2025年最近7天走势,今日出价,今日竞价,IRG4PC30批发/采购报价,IRG4PC30行情走势销售排行榜,IRG4PC30报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IRG4PC30

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.59V,@Vge=15V,Ic=17A)

FastSpeedIGBT Features •Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IndustrystandardTO-247ACpackage Benefits •Gener

IRF

International Rectifier

IRF

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.59V,@Vge=15V,Ic=17A)

FastSpeedIGBT Features •Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IndustrystandardTO-247ACpackage Benefits •Gener

IRF

International Rectifier

IRF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.59V,@Vge=15V,Ic=17A)

FastCoPackIGBT Features •Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IGBTco-packagedwithHEXFREDTMultrafast,ultra-sof

IRF

International Rectifier

IRF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODEFastCoPack1GBT

VCES=600V VCE(on)typ.=1.59V @VGE=15V,IC=17A Features •Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IGBTco-packa

IRF

International Rectifier

IRF

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.21V,@Vge=15V,Ic=16A)

ShortCircuitRatedUltraFastIGBT Features •Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,@360VVCE(start),TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •Latestgenerationdesignprovidestighterparameterdistributionandhighereffi

IRF

International Rectifier

IRF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=2.21V,@Vge=15V,Ic=16A)

ShortCircuitRatedUltraFastIGBT Features •Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,@360VVCE(start),TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •Tighterparameterdistributionandhigherefficiencythanpreviousgen

IRF

International Rectifier

IRF

INSULATEDGATEBIPOALRTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features •Highshortcircuitratingoptimizedformotorcontrol, tsc=10µs,@360VVCE(start),TJ=125°C, VGE=15V •Combineslowconductionlosseswithhigh switchingspeed •Tighterparameterdistributionandhigherefficiency thanpreviousgenerations •IGBTco-packaged

IRF

International Rectifier

IRF

INSULATEDGATEBIPOLARTRANSISTOR

Features •Highshortcircuitratingoptimizedformotorcontrol, tsc=10μs,@360VVCE(start),TJ=125°C, VGE=15V •Combineslowconductionlosseswithhigh switchingspeed •Latestgenerationdesignprovidestighterparameter distributionandhigherefficiencythanprevio

IRF

International Rectifier

IRF

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.4V,@Vge=15V,Ic=18A)

StandardSpeedIGBT Features •Standard:Optimizedforminimumsaturationvoltageandlowoperatingfrequencies(

IRF

International Rectifier

IRF

INSULATEDGATEBIPOLARTRANSISTORStandardSpeedIGBT

INSULATEDGATEBIPOLARTRANSISTORStandardSpeedIGBT

IRF

International Rectifier

IRF

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.95V,@Vge=15V,Ic=12A)

UltraFastSpeedIGBT Features •UltraFast:Optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IndustrystandardTO-247ACpackage Benefits •

IRF

International Rectifier

IRF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.95V,@Vge=15V,Ic=12A)

UltraFastCoPackIGBT Features •UltraFast:Optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IGBTco-packagedwithHEXFREDTMultrafast,ult

IRF

International Rectifier

IRF

IGBT

DESCRIPTION ·LowSaturationVoltage ·Anti-ParallelUltraFastDiode ·AvalancheCapability ·InternationalStandardPackage APPLICATIONS ·SynchronousRectificationinSMPS ·AutomotiveChargers ·UPS,PFC ·HighVoltageAuxiliaries ·WeldingMachines

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features •UltraFast:Optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode •Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 •IGBTco-packagedwithHEXFREDTMultrafast, ultra-

IRF

International Rectifier

IRF

INSULATEDGATEBIPOLARTRANSISTORUltraFastSpeedIGBT

UltraFastSpeedIGBT Features •ShortCircuitRatedUltraFast:Optimizedforhighoperatingfrequencies>5.0kHz,andShortCircuitRatedto10µs@125°C,VGE=15V •Generation4IGBTdesignprovideshigherefficiencythanGeneration3 •IndustrystandardTO-220ABpackage Benefits •Genera

IRF

International Rectifier

IRF

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)max.=2.70V,@Vge=15V,Ic=12A)

Features •DesignedexpresslyforSwitch-ModePowerSupplyandPFC(powerfactorcorrection)applications •Industry-benchmarkswitchinglossesimproveefficiencyofallpowersupplytopologies •50reductionofEoffparameter •LowIGBTconductionlosses •Latest-generationIGBTdesignandc

IRF

International Rectifier

IRF

INSULATEDGATEBIPOLARTRANSISTOR

Features •DesignedexpresslyforSwitch-ModePowerSupplyandPFC(powerfactorcorrection)applications •Industry-benchmarkswitchinglossesimproveefficiencyofallpowersupplytopologies •50reductionofEoffparameter •LowIGBTconductionlosses •Latest-generationIGBTdesignandc

IRF

International Rectifier

IRF

FitRate/EquivalentDeviceHours

文件:98.39 Kbytes Page:35 Pages

IRF

International Rectifier

IRF

FitRate/EquivalentDeviceHours

文件:98.39 Kbytes Page:35 Pages

IRF

International Rectifier

IRF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

文件:385.52 Kbytes Page:11 Pages

IRF

International Rectifier

IRF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

文件:385.52 Kbytes Page:11 Pages

IRF

International Rectifier

IRF

INSULATEDGATEBIPOLARTRANSISTORFastSpeedIGBT

文件:273.67 Kbytes Page:9 Pages

IRF

International Rectifier

IRF

INSULATEDGATEBIPOLARTRANSISTOR

文件:274.63 Kbytes Page:9 Pages

IRF

International Rectifier

IRF

封装/外壳:TO-247-3 包装:卷带(TR) 描述:IGBT 600V 31A 100W TO247AC 分立半导体产品 晶体管 - UGBT、MOSFET - 单

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

Infineon

INSULATEDGATEBIPOLARTRANSISTOR

文件:274.63 Kbytes Page:9 Pages

IRF

International Rectifier

IRF

FitRate/EquivalentDeviceHours

文件:98.39 Kbytes Page:35 Pages

IRF

International Rectifier

IRF

封装/外壳:TO-247-3 包装:管件 描述:IGBT 600V 28A 100W TO247AC 分立半导体产品 晶体管 - UGBT、MOSFET - 单

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

Infineon

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

文件:346.22 Kbytes Page:11 Pages

IRF

International Rectifier

IRF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

文件:346.22 Kbytes Page:11 Pages

IRF

International Rectifier

IRF

INSULATEDGATEBIPOLARTRANSISTOR

文件:261.149 Kbytes Page:9 Pages

IRF

International Rectifier

IRF

INSULATEDGATEBIPOLARTRANSISTOR

文件:261.149 Kbytes Page:9 Pages

IRF

International Rectifier

IRF

FitRate/EquivalentDeviceHours

文件:98.39 Kbytes Page:35 Pages

IRF

International Rectifier

IRF

INSULATEDGATEBIPOLARTRANSISTOR

文件:250.67 Kbytes Page:9 Pages

IRF

International Rectifier

IRF

INSULATEDGATEBIPOLARTRANSISTOR

文件:250.67 Kbytes Page:9 Pages

IRF

International Rectifier

IRF

FitRate/EquivalentDeviceHours

文件:98.39 Kbytes Page:35 Pages

IRF

International Rectifier

IRF

FitRate/EquivalentDeviceHours

文件:98.39 Kbytes Page:35 Pages

IRF

International Rectifier

IRF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

文件:390.82 Kbytes Page:11 Pages

IRF

International Rectifier

IRF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

文件:390.82 Kbytes Page:11 Pages

IRF

International Rectifier

IRF

INSULATEDGATEBIPOLARTRANSISTOR

文件:274.59 Kbytes Page:9 Pages

IRF

International Rectifier

IRF

INSULATEDGATEBIPOLARTRANSISTOR

文件:274.59 Kbytes Page:9 Pages

IRF

International Rectifier

IRF

INSULATEDGATEBIPOLARTRANSISTOR

文件:255.35 Kbytes Page:9 Pages

IRF

International Rectifier

IRF

INSULATEDGATEBIPOLARTRANSISTOR

文件:255.35 Kbytes Page:9 Pages

IRF

International Rectifier

IRF

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.59V,@Vge=15V,Ic=17A)

FastSpeedIGBT Features •Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IndustrystandardTO-247ACpackage Benefits •Gener

IRF

International Rectifier

IRF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

文件:390.82 Kbytes Page:11 Pages

IRF

International Rectifier

IRF

IRG4PC30产品属性

  • 类型

    描述

  • 型号

    IRG4PC30

  • 制造商

    IRF

  • 制造商全称

    International Rectifier

  • 功能描述

    INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)

更新时间:2025-5-17 12:12:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR/国际整流器
21+
TO-247
10000
只做原装,质量保证
IR
24+
N/A
8000
全新原装正品,现货销售
IR
23+
QFP
3200
全新原装、诚信经营、公司现货销售
IR
24+
TO-247
9700
绝对原装正品现货假一罚十
IR/INFINEON
2022+
TO-247
57550
Infineon
23+
IGBT
5864
原装原标原盒 给价就出 全网最低
IR/国际整流器
24+
TO-247
6000
全新原装深圳仓库现货有单必成
IR
24+
TO-247
8000
只做自己库存,全新原装进口正品假一赔百,可开13%增
IR
TO-247
68500
一级代理 原装正品假一罚十价格优势长期供货
IR
23+
31400
原厂授权一级代理,专业海外优势订货,价格优势、品种

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