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IRG4PC30FD价格
参考价格：￥8.3270
型号：IRG4PC30FDPBF 品牌：International 备注：这里有IRG4PC30FD多少钱，2025年最近7天走势，今日出价，今日竞价，IRG4PC30FD批发/采购报价，IRG4PC30FD行情走势销售排行榜，IRG4PC30FD报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRG4PC30FD | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) Fast CoPack IGBT Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-sof | IRF |   | |
IRG4PC30FD | Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages | IRF | | |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) Fast Speed IGBT Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package Benefits • Gener | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack 1GBT VCES = 600V VCE(on) typ. = 1.59V @VGE = 15V, IC = 17A Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packa | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：385.52 Kbytes Page：11 Pages | IRF | | ||
封装/外壳：TO-247-3 包装：卷带（TR） 描述：IGBT 600V 31A 100W TO247AC 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | Infineon 英飞凌 | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：385.52 Kbytes Page：11 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) Fast Speed IGBT Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package Benefits • Gener | IRF | | ||
Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) Fast Speed IGBT Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package Benefits • Gener | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：390.82 Kbytes Page：11 Pages | IRF | |
IRG4PC30FD产品属性
- 类型
描述
- 型号
IRG4PC30FD
- 制造商
International Rectifier
- 功能描述
SINGLE IGBT, 600V, 31A, Transistor
- Type
IGBT, DC Collector
- Current
31A, Collecto
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
TO-247 |
65400 |
||||
IR |
23+ |
TO-247 |
19526 |
||||
IR |
24+ |
TO-247 |
9700 |
绝对原装正品现货假一罚十 |
|||
IR |
23+ |
TO-247 |
19800 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
IR |
24+ |
TO-247-3 |
9 |
||||
IR |
TO-247 |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
IR |
17+ |
TO-247 |
6200 |
100%原装正品现货 |
|||
IR |
23+ |
TO-3P |
5000 |
原装正品,假一罚十 |
|||
IR |
23+ |
TO-247AC |
7300 |
专注配单,只做原装进口现货 |
|||
IR |
23+ |
TO-247 |
7000 |
IRG4PC30FD规格书下载地址
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DdatasheetPDF页码索引
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