| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
G4PC30UD | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：390.82 Kbytes Page：11 Pages | IRF |   | |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) Fast Speed IGBT Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package Benefits • Gener | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) Fast Speed IGBT Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package Benefits • Gener | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) Fast Speed IGBT Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package Benefits • Gener | IRF | | ||
Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages | IRF | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
TO-3P |
8000 |
只做原装现货 |
|||
IR |
23+ |
TO-3P |
7000 |
||||
IR |
24+ |
TO-3P |
92 |
||||
23+ |
TO-3P |
65480 |
|||||
IR |
24+ |
TO-3P |
27500 |
原装正品,价格最低! |
|||
IR |
22+ |
TO-3P |
6000 |
终端可免费供样,支持BOM配单 |
|||
IR |
24+ |
TO-247 |
60000 |
||||
IR |
23+ |
TO-247 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
IR |
23+ |
TO-247 |
50000 |
全新原装正品现货,支持订货 |
|||
IR |
TO-3P |
50000 |
一级代理 原装正品假一罚十价格优势长期供货 |
G4PC30UD规格书下载地址
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