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IRG4PC30SPBF价格
参考价格：￥13.6071
型号：IRG4PC30SPBF 品牌：IR 备注：这里有IRG4PC30SPBF多少钱，2026年最近7天走势，今日出价，今日竞价，IRG4PC30SPBF批发/采购报价，IRG4PC30SPBF行情走势销售排行榜，IRG4PC30SPBF报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRG4PC30SPBF | INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT | IRF |   | |
IRG4PC30SPBF | INSULATED GATE BIPOLAR TRANSISTOR 文件：250.67 Kbytes Page：9 Pages | IRF | | |
IRG4PC30SPBF | 封装/外壳：TO-247-3 包装：卷带（TR） 描述：IGBT 600V 34A 100W TO247AC 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | INFINEON 英飞凌 | | |
INSULATED GATE BIPOLAR TRANSISTOR 文件：250.67 Kbytes Page：9 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) Fast Speed IGBT Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package Benefits • Gener | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) Fast CoPack IGBT Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-sof | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) Short Circuit Rated UltraFast IGBT Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Tighter parameter distribution and higher efficiency than previous gen | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A) UltraFast Speed IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package Benefits • | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A) UltraFast CoPack IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ult | IRF | |
IRG4PC30SPBF产品属性
- 类型
描述
- 型号
IRG4PC30SPBF
- 功能描述
IGBT 晶体管 600V DC-1kHz
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INTERNATIONALRECTIFIER |
21+ |
NA |
12820 |
只做原装,质量保证 |
|||
IR |
24+ |
TO-3P |
1070 |
||||
IR |
2016+ |
TO220 |
6000 |
公司只做原装,假一罚十,可开17%增值税发票! |
|||
IR |
26+ |
SOD123W |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
Infineon Technologies |
23+ |
原装 |
7000 |
||||
原装 |
最新 |
TO220 |
8900 |
公司原装现货特价长期供货欢迎来电咨询 |
|||
INTERNATIONALRECTIFIER |
2450+ |
NA |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
IR |
25+ |
TO220 |
18600 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
IR |
23+ |
TO-247 |
18800 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
26+ |
N/A |
52000 |
一级代理-主营优势-实惠价格-不悔选择 |
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属性 参数值 商品目录 IGBT管 集电极电流（Ic）（最大值） 55A 集射极击穿电压（最大值） 600V 类型 - 不同 Vge，Ic 时的 Vce（on） 2.3V @ 15V，27A 栅极阈值电压-VGE(th) 6V @ 250uA
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DdatasheetPDF页码索引
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