IRG4PC30SPBF价格

参考价格:¥13.6071

型号:IRG4PC30SPBF 品牌:IR 备注:这里有IRG4PC30SPBF多少钱,2025年最近7天走势,今日出价,今日竞价,IRG4PC30SPBF批发/采购报价,IRG4PC30SPBF行情走势销售排行榜,IRG4PC30SPBF报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IRG4PC30SPBF

INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT

INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT

IRF

IRG4PC30SPBF

INSULATED GATE BIPOLAR TRANSISTOR

文件:250.67 Kbytes Page:9 Pages

IRF

IRG4PC30SPBF

封装/外壳:TO-247-3 包装:卷带(TR) 描述:IGBT 600V 34A 100W TO247AC 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Infineon

英飞凌

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)

Fast Speed IGBT Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package Benefits • Gener

IRF

INSULATED GATE BIPOLAR TRANSISTOR

文件:250.67 Kbytes Page:9 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)

Fast Speed IGBT Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package Benefits • Gener

IRF

Fit Rate / Equivalent Device Hours

文件:98.39 Kbytes Page:35 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)

Fast Speed IGBT Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package Benefits • Gener

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件:390.82 Kbytes Page:11 Pages

IRF

IRG4PC30SPBF产品属性

  • 类型

    描述

  • 型号

    IRG4PC30SPBF

  • 功能描述

    IGBT 晶体管 600V DC-1kHz

  • RoHS

  • 制造商

    Fairchild Semiconductor

  • 配置

    集电极—发射极最大电压

  • VCEO

    650 V

  • 集电极—射极饱和电压

    2.3 V

  • 栅极/发射极最大电压

    20 V 在25

  • C的连续集电极电流

    150 A

  • 栅极—射极漏泄电流

    400 nA

  • 功率耗散

    187 W

  • 封装/箱体

    TO-247

  • 封装

    Tube

更新时间:2025-8-23 16:46:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
23+
TO-247
19526
INTERNATIONALRECTIFIER
21+
NA
12820
只做原装,质量保证
IR
23+
TO-247
18800
原厂授权一级代理,专业海外优势订货,价格优势、品种
IR
24+
TO3P
85900
IR
TO-247
68500
一级代理 原装正品假一罚十价格优势长期供货
INTERNATIONALRECTIFIER
24+
NA
43250
郑重承诺只做原装进口现货
IR
2016+
TO-247
6528
房间原装进口现货假一赔十
Infineon Technologies
23+
原装
8000
只做原装现货
Infineon Technologies
23+
原装
7000
Infineon Technologies
22+
TO247AC
9000
原厂渠道,现货配单

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