INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Standard Speed CoPack IGBT Features • Extremely low voltage drop 1.1Vtyp. @ 2A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives. • Very Tight Vce(on) distribution • IGBT co-packaged with HEXFREDTM ultrafast, ultra-so

封装/外壳：TO-220-3 包装：管件 描述：IGBT 600V 14A 38W TO220AB 分立半导体产品 晶体管 - UGBT、MOSFET - 单

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Standard Speed CoPack IGBT Features • Extremely low voltage drop 1.1Vtyp. @ 2A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives. • Very Tight Vce(on) distribution • IGBT co-packaged with HEXFREDTM ultrafast, ultra-so

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件：217.89 Kbytes Page：12 Pages

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A)

文件：217.3 Kbytes Page：12 Pages

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件：313.31 Kbytes Page：12 Pages

封装/外壳：TO-262-3，长引线，I²Pak，TO-262AA 包装：管件 描述：IGBT 600V 14A 38W TO262 分立半导体产品 晶体管 - UGBT、MOSFET - 单

600V DC-1 kHz (Standard) Copack IGBT in a D2-Pak package

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件：217.89 Kbytes Page：12 Pages

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A)

文件：217.3 Kbytes Page：12 Pages

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件：313.31 Kbytes Page：12 Pages

Short Circuit Rated UltraFast IGBT

Short Circuit Rated UltraFast IGBT Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides higher efficiency than Generation 3 • Industry standard TO-220AB package Bene

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.2.39V, @Vge=15V, Ic=5.0A)

Short Circuit Rated UltraFast IGBT Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Tighter parameter distribution and higher efficiency than previous generations

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Short Circuit Rated UltraFast IGBT Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Tighter parameter distribution and higher efficiency than previous generations

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged w

High short circuit rating optimized for motor control

文件：274.8 Kbytes Page：11 Pages