INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

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封装/外壳：TO-262-3，长引线，I²Pak，TO-262AA 包装：管件 描述：IGBT 600V 14A 38W TO262 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Short Circuit Rated UltraFast IGBT

Short Circuit Rated UltraFast IGBT Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides higher efficiency than Generation 3 • Industry standard TO-220AB package Bene

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.2.39V, @Vge=15V, Ic=5.0A)

Short Circuit Rated UltraFast IGBT Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Tighter parameter distribution and higher efficiency than previous generations

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Short Circuit Rated UltraFast IGBT Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Tighter parameter distribution and higher efficiency than previous generations

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged w

High short circuit rating optimized for motor control

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