位置：首页 > IC中文资料第1118页 > IRG4BC10SD-L
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRG4BC10SD-L | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：217.89 Kbytes Page：12 Pages | IRF |   | |
IRG4BC10SD-L | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A) 文件：217.3 Kbytes Page：12 Pages | IRF | | |
IRG4BC10SD-L | 封装/外壳：TO-262-3，长引线，I²Pak，TO-262AA 包装：管件 描述：IGBT 600V 14A 38W TO262 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | Infineon 英飞凌 | | |
IRG4BC10SD-L | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | Infineon 英飞凌 | | |
封装/外壳：TO-262-3，长引线，I²Pak，TO-262AA 包装：管件 描述：IGBT 600V 14A 38W TO262 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | Infineon 英飞凌 | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：313.31 Kbytes Page：12 Pages | IRF | | ||
Short Circuit Rated UltraFast IGBT Short Circuit Rated UltraFast IGBT Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides higher efficiency than Generation 3 • Industry standard TO-220AB package Bene | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.2.39V, @Vge=15V, Ic=5.0A) Short Circuit Rated UltraFast IGBT Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Tighter parameter distribution and higher efficiency than previous generations | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged w | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast IGBT Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Tighter parameter distribution and higher efficiency than previous generations | IRF | | ||
High short circuit rating optimized for motor control 文件：274.8 Kbytes Page：11 Pages | IRF | |
IRG4BC10SD-L产品属性
- 类型
描述
- 型号
IRG4BC10SD-L
- 功能描述
DIODE IGBT 600V 14.0A TO-262
- RoHS
否
- 类别
分离式半导体产品 >> IGBT - 单路
- 系列
-
- 标准包装
30
- 系列
GenX3™ IGBT
- 类型
PT 电压 -
- 集电极发射极击穿（最大）
1200V Vge,
- Ic时的最大Vce（开）
3V @ 15V，100A 电流 -
- 集电极(Ic)（最大）
200A 功率 -
- 最大
830W
- 输入类型
标准
- 安装类型
通孔
- 封装/外壳
TO-247-3
- 供应商设备封装
PLUS247?-3
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
TO-262 |
7300 |
专注配单,只做原装进口现货 |
|||
Infineon Technologies |
23+ |
原装 |
7000 |
||||
IR |
24+ |
TO-262 |
8866 |
||||
IR |
20+ |
TO-220 |
38560 |
原装优势主营型号-可开原型号增税票 |
|||
IR |
10+ |
TO-262 |
300 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
IR |
22+ |
TO-262 |
6000 |
终端可免费供样,支持BOM配单 |
|||
INFINEON/英飞凌 |
24+ |
TO-262 |
60000 |
全新原装现货 |
|||
IR |
24+ |
原厂封装 |
100 |
原装现货假一罚十 |
|||
Infineon Technologies |
24+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
|||
IR |
2015+ |
TO-262 |
12500 |
全新原装,现货库存长期供应 |
IRG4BC10SD-L芯片相关品牌
IRG4BC10SD-L规格书下载地址
IRG4BC10SD-L参数引脚图相关
- l101
- l100
- ku波段
- kt250
- kse13005
- ks20
- km710
- ka5q1265rf
- k9f1208
- k310
- k2698
- k233
- k2055
- k2010
- jumper
- jtag接口
- jk触发器
- j111
- j108
- isd1420
- IRH7130
- IRH7054
- IRH60
- IRH4230
- IRH4150
- IRH4054
- IRH3230
- IRH3150
- IRH3054
- IRGPH50
- IRGPH40
- IRGPH20
- IRGPC40
- IRGBF30
- IRGBF20
- IRGBC40
- IRGBC30
- IRGBC20
- IRGB430
- IRGB420
- IRG4BC20FDPBF
- IRG4BC20FD
- IRG4BC20F
- IRG4BC15UDSTRLP
- IRG4BC15UD-STRL
- IRG4BC15UD-SPBF
- IRG4BC15UD-S
- IRG4BC15UDPBF
- IRG4BC15UD-LPBF
- IRG4BC15UD-L
- IRG4BC15UD
- IRG4BC15MDPBF
- IRG4BC10UPBF
- IRG4BC10UDPBF
- IRG4BC10UD
- IRG4BC10SPBF
- IRG4BC10SD-SPBF
- IRG4BC10SD-S
- IRG4BC10SDPBF
- IRG4BC10SD-LPBF
- IRG4BC10SD
- IRG4BC10S
- IRG4BC10KPBF
- IRG4BC10KDPBF
- IRG4BC10KD
- IRG4BC10K
- IRG4BAC50W-SPBF
- IRG4BAC50W-S
- IRG4BAC50W
- IRG4BAC50U
- IRG4BAC50S
- IRG41BC30UD
- IRG 4PH50UDPBF
- IRG 4PC50FDPBF
- IRG 4PC40WPBF
- IRG 4PC40UDPBF
- IRG 4BC15UDPBF
- IRFZ48ZSPBF
- IRFZ48ZSHR
- IRFZ48ZS
- IRFZ48Z
- IRFZ48V
- IRFZ48S
- IRFZ48R
- IRFZ48N
- IRFZ48L
- IRFZ48
- IRFZ46Z
- IRFZ46S
- IRFZ46N
- IRFZ46L
- IRFZ46
- IRFZ45
- IRFZ44Z
- IRFZ44V
- IRFZ44S
- IRFZ44R
- IRFZ44N
- IRFZ44L
- IRFZ44E
IRG4BC10SD-L数据表相关新闻
IRFZ44NSTRLPBF 原装正品.仓库现货
华富芯深圳智能科技 有限公司
2021-11-24IRG4PC40KPBF 原装正品.仓库现货
华富芯深圳智能 科技有限公司
2021-11-23IRFZ44NPBF原装现货
IRFZ44NPBF原装正品
2021-8-10IRG4PC50WPBF
属性 参数值 商品目录 IGBT管 集电极电流（Ic）（最大值） 55A 集射极击穿电压（最大值） 600V 类型 - 不同 Vge，Ic 时的 Vce（on） 2.3V @ 15V，27A 栅极阈值电压-VGE(th) 6V @ 250uA
2020-10-27IRGB15B60KDPBF IR全新正品现货
原装正品现货热卖中，焕盛达-专注原装 用芯服务；
2020-7-17IRFZ44NPBF选拓亿芯电子，国际电子元器件供应商
元器件优质供应
2019-11-1
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107
