N-CHANNEL 200V - 0.073ohm - 33A TO-247 PowerMesh II MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 0.

N-Channel Power Mosfets

200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. Features • 32A, 200V, RDS(on)= 0.085Ω@VGS= 10 V • Low gate charge ( typical 95 nC) • Low Crss ( typical 75 pF) • Fast switching • 100 ava

N-Channel(Hexfet Transistors)

Power MOSFET(Vdss = 200 V, Rds(on)=0.075ohm, Id=30A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

Standard Power MOSFET

N-Channel Enhancement Mode Features • International standard package JEDEC TO-247 AD • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • High commutating dv/dt rating • Fast switching times Applications • Switch-mode and resonant-mode power supplies • Motor controls

High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series

FEATURES: • Fast switching times • Low RDS(on) HDMOS™ process • Rugged polysilicon gate cell structure • Excellent high voltage stability • Low input capacitance • Improved high temperature reliability APPLICATIONS: • Switching power supplies • Motor controls • Audio Amplifiers • Invert

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The TO-220 package is universially preferred for commercial-industrial applications where higher power leve

iscN-Channel MOSFET Transistor

DESCRIPTION · Designed for use in switch mode power supplies and general purpose applications. FEATURES · Drain Current –ID= 33A@ TC=25℃ · Drain Source Voltage- : VDSS= 200V(Min) · Static Drain-Source On-Resistance : RDS(on) = 0.085Ω(Max) · Fast Switching

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Isolated central mounting hole • Fast switching • Ease of Paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides inf

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Isolated central mounting hole • Fast switching • Ease of Paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides inf

Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10μA (Max.) @ VDS = 200V ■ Low RDS(ON) : 0.071Ω (Typ.)

isc N-Channel MOSFET Transistor

DESCRIPTION · Designed for use in switch mode power supplies and general purpose applications. FEATURES · Drain Current –ID= 32A@ TC=25℃ · Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.085Ω(Max) · Fast Switching

200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. Features • 32A, 200V, RDS(on)= 0.085Ω@VGS= 10 V • Low gate charge ( typical 95 nC) • Low Crss ( typical 75 pF) • Fast switching • 100 ava

IR MOSFET?

Features  Advanced Process Technology  Dynamic dv/dt Rating  175°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Ease of Paralleling  Simple Drive Requirements  Lead-Free Description IR MOSFET™ technology from Infineon utilizes advanced processing techniques to

Power MOSFET(Vdss = 200 V, Rds(on)=0.075ohm, Id=30A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

HEXFET짰 Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The TO-220 package is universially preferred for commercial-industrial applications where higher power leve

N-Channel Power Mosfets

N-Channel(Hexfet Transistors)

High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series

FEATURES: • Fast switching times • Low RDS(on) HDMOS™ process • Rugged polysilicon gate cell structure • Excellent high voltage stability • Low input capacitance • Improved high temperature reliability APPLICATIONS: • Switching power supplies • Motor controls • Audio Amplifiers • Invert

N-Channel Power Mosfets

N-Channel(Hexfet Transistors)

High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series

FEATURES: • Fast switching times • Low RDS(on) HDMOS™ process • Rugged polysilicon gate cell structure • Excellent high voltage stability • Low input capacitance • Improved high temperature reliability APPLICATIONS: • Switching power supplies • Motor controls • Audio Amplifiers • Invert

N-Channel Power Mosfets

N-Channel(Hexfet Transistors)

High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series

FEATURES: • Fast switching times • Low RDS(on) HDMOS™ process • Rugged polysilicon gate cell structure • Excellent high voltage stability • Low input capacitance • Improved high temperature reliability APPLICATIONS: • Switching power supplies • Motor controls • Audio Amplifiers • Invert

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 23A@ TC=25℃ • Drain Source Voltage- : VDSS= 250V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.14Ω(Max) • Fast Switching

HEXFET짰 Power MOSFET

The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mouting hole. It also provides greater creepage distance between pins to mee

Power MOSFET(Vdss = 250 V, Rds(on)=0.14ohm, Id=23A)

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast S

Standard Power MOSFET - N-Channel Enhancement Mode

Standard Power MOSFET N-Channel Enhancement Mode Features • International standard package JEDEC TO-247 AD • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • High commutating dv/dt rating • Fast switching times Applications • Switch-mode and resonant-mode po

High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series

FEATURES: • Fast switching times • Low RDS(on) HDMOS™ process • Rugged polysilicon gate cell structure • Excellent high voltage stability • Low input capacitance • Improved high temperature reliability APPLICATIONS: • Switching power supplies • Motor controls • Audio Amplifiers • Invert

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Isolated central mounting hole • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides inf

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Isolated central mounting hole • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides inf

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FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V ♦ Low RDS(ON): 0.108Ω (Typ.)

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 25A@ TC=25℃ • Drain Source Voltage- : VDSS= 250V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.14Ω(Max) • Fast Switching

250V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

Power MOSFET(Vdss=250V, Rds(on)=125mohm, Id=23A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

Power MOSFET

DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that these Power MOSFETs are well known for, provides the design

HEXFET짰 Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

Power MOSFET

DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that these Power MOSFETs are well known for, provides the design

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude

N-Channel: Standard Power MOSFETs

Power MOSFET

200V N-Channel MOSFET

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