N-CHANNEL 200V - 0.073ohm - 33A TO-247 PowerMesh II MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 0.

N-Channel Power Mosfets

200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. Features • 32A, 200V, RDS(on)= 0.085Ω@VGS= 10 V • Low gate charge ( typical 95 nC) • Low Crss ( typical 75 pF) • Fast switching • 100 ava

N-Channel(Hexfet Transistors)

Power MOSFET(Vdss = 200 V, Rds(on)=0.075ohm, Id=30A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

Standard Power MOSFET

N-Channel Enhancement Mode Features • International standard package JEDEC TO-247 AD • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • High commutating dv/dt rating • Fast switching times Applications • Switch-mode and resonant-mode power supplies • Motor controls

High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series

FEATURES: • Fast switching times • Low RDS(on) HDMOS™ process • Rugged polysilicon gate cell structure • Excellent high voltage stability • Low input capacitance • Improved high temperature reliability APPLICATIONS: • Switching power supplies • Motor controls • Audio Amplifiers • Invert

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The TO-220 package is universially preferred for commercial-industrial applications where higher power leve

iscN-Channel MOSFET Transistor

DESCRIPTION · Designed for use in switch mode power supplies and general purpose applications. FEATURES · Drain Current –ID= 33A@ TC=25℃ · Drain Source Voltage- : VDSS= 200V(Min) · Static Drain-Source On-Resistance : RDS(on) = 0.085Ω(Max) · Fast Switching

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Isolated central mounting hole • Fast switching • Ease of Paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides inf

SEMICONDUCTORS

文件：2.43533 Mbytes Page：31 Pages

Power MOSFET

文件：1.49088 Mbytes Page：11 Pages

N-Channel: Standard Power MOSFETs

Power MOSFET

200V N-Channel MOSFET

Power MOSFET

文件：1.46833 Mbytes Page：9 Pages

ThinkiSemi 200V,32A N-Channel Planar Process Power MOSFETs

文件：2.29184 Mbytes Page：7 Pages

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Isolated central mounting hole • Fast switching • Ease of Paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides inf

isc N-Channel MOSFET Transistor

DESCRIPTION · Designed for use in switch mode power supplies and general purpose applications. FEATURES · Drain Current –ID= 32A@ TC=25℃ · Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.085Ω(Max) · Fast Switching

Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10μA (Max.) @ VDS = 200V ■ Low RDS(ON) : 0.071Ω (Typ.)

200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. Features • 32A, 200V, RDS(on)= 0.085Ω@VGS= 10 V • Low gate charge ( typical 95 nC) • Low Crss ( typical 75 pF) • Fast switching • 100 ava

IR MOSFET?

Features  Advanced Process Technology  Dynamic dv/dt Rating  175°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Ease of Paralleling  Simple Drive Requirements  Lead-Free Description IR MOSFET™ technology from Infineon utilizes advanced processing techniques to

Power MOSFET(Vdss = 200 V, Rds(on)=0.075ohm, Id=30A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

HEXFET짰 Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The TO-220 package is universially preferred for commercial-industrial applications where higher power leve

Power MOSFET

文件：1.46833 Mbytes Page：9 Pages

Power MOSFET

文件：1.49088 Mbytes Page：11 Pages

ThinkiSemi 200V,32A N-Channel Planar Process Power MOSFETs

文件：2.43012 Mbytes Page：7 Pages

ThinkiSemi 200V,32A N-Channel Planar Process Power MOSFETs

文件：2.4987 Mbytes Page：7 Pages

200V N-Channel MOSFET

文件：451.54 Kbytes Page：7 Pages

ThinkiSemi 200V,30A N-Channel Planar Process Power MOSFETs

文件：2.88166 Mbytes Page：8 Pages

N-Channel MOSFET Transistor

文件：333.5 Kbytes Page：2 Pages

ThinkiSemi 200V,30A N-Channel Planar Process Power MOSFETs

文件：4.84983 Mbytes Page：8 Pages

HEXFET짰 Power MOSFET

文件：262.82 Kbytes Page：9 Pages

Advanced Process Technology

文件：642.71 Kbytes Page：8 Pages

Advanced Process Technology

文件：642.71 Kbytes Page：8 Pages

isc N-Channel MOSFET Transistor

文件：169.52 Kbytes Page：2 Pages

ThinkiSemi 200V,30A N-Channel Planar Process Power MOSFETs

文件：2.82449 Mbytes Page：8 Pages

N-Channel MOSFET Transistor

文件：333.48 Kbytes Page：2 Pages

Advanced Process Technology

文件：186.2 Kbytes Page：8 Pages

ThinkiSemi 200V,30A N-Channel Planar Process Power MOSFETs

文件：2.8601 Mbytes Page：8 Pages

isc N-Channel MOSFET Transistor

文件：272.64 Kbytes Page：2 Pages

Advanced Process Technology

文件：186.2 Kbytes Page：8 Pages

ThinkiSemi 200V,32A N-Channel Planar Process Power MOSFETs

文件：2.40596 Mbytes Page：7 Pages

HEXFET짰 Power MOSFET

文件：3.34495 Mbytes Page：7 Pages

Power MOSFET

文件：1.49088 Mbytes Page：11 Pages

POWER TRANSISTORS(25A,125W)

COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS

HIGH POWER GENERAL USE INSULATED TYPE

• IF(AV) Average forward current .......... 250A • VRRM Repetitive peak reverse voltage .............. 400/800/1200/1600V • DOUBLE ARMS • Insulated Type • UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC motor controllers, DC motor c

HIGH POWER GENERAL USE INSULATED TYPE

• IF(AV) Average forward current .......... 250A • VRRM Repetitive peak reverse voltage .............. 400/800/1200/1600V • DOUBLE ARMS • Insulated Type • UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC motor controllers, DC motor c

HIGH POWER GENERAL USE INSULATED TYPE

• IF(AV) Average forward current .......... 250A • VRRM Repetitive peak reverse voltage .............. 400/800/1200/1600V • DOUBLE ARMS • Insulated Type • UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC motor controllers, DC motor c

HIGH POWER GENERAL USE INSULATED TYPE

• IF(AV) Average forward current .......... 250A • VRRM Repetitive peak reverse voltage .............. 400/800/1200/1600V • DOUBLE ARMS • Insulated Type • UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC motor controllers, DC motor c