位置:首页 > IC中文资料第1764页 > IRFP250
IRFP250价格
参考价格:¥16.3743
型号:IRFP250 品牌:IXYS 备注:这里有IRFP250多少钱,2025年最近7天走势,今日出价,今日竞价,IRFP250批发/采购报价,IRFP250行情走势销售排行榜,IRFP250报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
IRFP250 | N-CHANNEL200V-0.073ohm-33ATO-247PowerMeshIIMOSFET DESCRIPTION ThePowerMESH™IIistheevolutionofthefirstgenerationofMESHOVERLAY™.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gatechargeandruggedness. ■TYPICALRDS(on)=0. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | ||
IRFP250 | N-ChannelPowerMosfets
| SamsungSamsung semiconductor 三星三星半导体 | ||
IRFP250 | 200VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary, planar,DMOStechnology. Features •32A,200V,RDS(on)=0.085Ω@VGS=10V •Lowgatecharge(typical95nC) •LowCrss(typical75pF) •Fastswitching •100ava | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | ||
IRFP250 | N-Channel(HexfetTransistors)
| IRF International Rectifier | ||
IRFP250 | PowerMOSFET(Vdss=200V,Rds(on)=0.075ohm,Id=30A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | ||
IRFP250 | StandardPowerMOSFET N-ChannelEnhancementMode Features •InternationalstandardpackageJEDECTO-247AD •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Highcommutatingdv/dtrating •Fastswitchingtimes Applications •Switch-modeandresonant-modepowersupplies •Motorcontrols | IXYS IXYS Corporation | ||
IRFP250 | PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheTO-220packageisuniversiallypreferredforcommercial-industrialapplicationswherehigherpowerleve | VishayVishay Siliconix 威世科技威世科技半导体 | ||
IRFP250 | HighVoltagePowerMOSFETDieN-ChannelEnhancementModeHighRuggednessSeries FEATURES: •Fastswitchingtimes •LowRDS(on)HDMOS™process •Ruggedpolysilicongatecellstructure •Excellenthighvoltagestability •Lowinputcapacitance •Improvedhightemperaturereliability APPLICATIONS: •Switchingpowersupplies •Motorcontrols •AudioAmplifiers •Invert | IXYS IXYS Corporation | ||
IRFP250 | iscN-ChannelMOSFETTransistor DESCRIPTION ·Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES ·DrainCurrent–ID=33A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.085Ω(Max) ·FastSwitching | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ||
IRFP250 | PowerMOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Isolatedcentralmountinghole •Fastswitching •EaseofParalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinf | VishayVishay Siliconix 威世科技威世科技半导体 | ||
IRFP250 | SEMICONDUCTORS 文件:2.43533 Mbytes Page:31 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | ||
IRFP250 | PowerMOSFET 文件:1.49088 Mbytes Page:11 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | ||
IRFP250 | ThinkiSemi200V,32AN-ChannelPlanarProcessPowerMOSFETs 文件:2.29184 Mbytes Page:7 Pages | THINKISEMIThinki Semiconductor Co., Ltd. 思祁半导体思祁半导体有限公司 | ||
IRFP250 | PowerMOSFET 文件:1.46833 Mbytes Page:9 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | ||
PowerMOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Isolatedcentralmountinghole •Fastswitching •EaseofParalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinf | VishayVishay Siliconix 威世科技威世科技半导体 | |||
iscN-ChannelMOSFETTransistor DESCRIPTION ·Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES ·DrainCurrent–ID=32A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.085Ω(Max) ·FastSwitching | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
AdvancedPowerMOSFET FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10μA(Max.)@VDS=200V ■LowRDS(ON):0.071Ω(Typ.) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
200VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary, planar,DMOStechnology. Features •32A,200V,RDS(on)=0.085Ω@VGS=10V •Lowgatecharge(typical95nC) •LowCrss(typical75pF) •Fastswitching •100ava | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
IRMOSFET? Features AdvancedProcessTechnology Dynamicdv/dtRating 175°COperatingTemperature FastSwitching FullyAvalancheRated EaseofParalleling SimpleDriveRequirements Lead-Free Description IRMOSFET™technologyfromInfineonutilizes advancedprocessingtechniquesto | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | |||
PowerMOSFET(Vdss=200V,Rds(on)=0.075ohm,Id=30A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | |||
HEXFET짰PowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | |||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheTO-220packageisuniversiallypreferredforcommercial-industrialapplicationswherehigherpowerleve | VishayVishay Siliconix 威世科技威世科技半导体 | |||
PowerMOSFET 文件:1.46833 Mbytes Page:9 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
PowerMOSFET 文件:1.49088 Mbytes Page:11 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
ThinkiSemi200V,32AN-ChannelPlanarProcessPowerMOSFETs 文件:2.43012 Mbytes Page:7 Pages | THINKISEMIThinki Semiconductor Co., Ltd. 思祁半导体思祁半导体有限公司 | |||
ThinkiSemi200V,32AN-ChannelPlanarProcessPowerMOSFETs 文件:2.4987 Mbytes Page:7 Pages | THINKISEMIThinki Semiconductor Co., Ltd. 思祁半导体思祁半导体有限公司 | |||
200VN-ChannelMOSFET 文件:451.54 Kbytes Page:7 Pages | ARTSCHIP ARTSCHIP ELECTRONICS CO.,LMITED. | |||
ThinkiSemi200V,30AN-ChannelPlanarProcessPowerMOSFETs 文件:2.88166 Mbytes Page:8 Pages | THINKISEMIThinki Semiconductor Co., Ltd. 思祁半导体思祁半导体有限公司 | |||
N-ChannelMOSFETTransistor 文件:333.5 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
HEXFET짰PowerMOSFET 文件:262.82 Kbytes Page:9 Pages | IRF International Rectifier | |||
ThinkiSemi200V,30AN-ChannelPlanarProcessPowerMOSFETs 文件:4.84983 Mbytes Page:8 Pages | THINKISEMIThinki Semiconductor Co., Ltd. 思祁半导体思祁半导体有限公司 | |||
AdvancedProcessTechnology 文件:642.71 Kbytes Page:8 Pages | IRF International Rectifier | |||
AdvancedProcessTechnology 文件:642.71 Kbytes Page:8 Pages | IRF International Rectifier | |||
iscN-ChannelMOSFETTransistor 文件:169.52 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
ThinkiSemi200V,30AN-ChannelPlanarProcessPowerMOSFETs 文件:2.82449 Mbytes Page:8 Pages | THINKISEMIThinki Semiconductor Co., Ltd. 思祁半导体思祁半导体有限公司 | |||
N-ChannelMOSFETTransistor 文件:333.48 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
ThinkiSemi200V,30AN-ChannelPlanarProcessPowerMOSFETs 文件:2.8601 Mbytes Page:8 Pages | THINKISEMIThinki Semiconductor Co., Ltd. 思祁半导体思祁半导体有限公司 | |||
AdvancedProcessTechnology 文件:186.2 Kbytes Page:8 Pages | IRF International Rectifier | |||
iscN-ChannelMOSFETTransistor 文件:272.64 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
AdvancedProcessTechnology 文件:186.2 Kbytes Page:8 Pages | IRF International Rectifier | |||
ThinkiSemi200V,32AN-ChannelPlanarProcessPowerMOSFETs 文件:2.40596 Mbytes Page:7 Pages | THINKISEMIThinki Semiconductor Co., Ltd. 思祁半导体思祁半导体有限公司 | |||
HEXFET짰PowerMOSFET 文件:3.34495 Mbytes Page:7 Pages | IRF International Rectifier | |||
PowerMOSFET 文件:1.49088 Mbytes Page:11 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Highpeakcurrentcarryingcapabilityupto6000A 文件:299.59 Kbytes Page:3 Pages | TECTE Connectivity Ltd 泰科电子泰科电子有限公司 | |||
DCaxialfans 文件:375.69 Kbytes Page:3 Pages | EBMPAPSTebm-papst 依必安派特依必安派特公司 | |||
DCaxialfans 文件:345.75 Kbytes Page:3 Pages | EBMPAPSTebm-papst 依必安派特依必安派特公司 | |||
DCaxialfans 文件:505.68 Kbytes Page:3 Pages | EBMPAPSTebm-papst 依必安派特依必安派特公司 | |||
CommercialComposition9mmDiameterVariableResistors 文件:1.41052 Mbytes Page:4 Pages | CTSCTS Electronic Components 西迪斯西迪斯公司 |
IRFP250产品属性
- 类型
描述
- 型号
IRFP250
- 功能描述
MOSFET N-Chan 200V 30 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IRE |
23+ |
TO-247 |
19526 |
原装正品价格优惠,长期优势供应 |
|||
IR |
2013+ |
TO-247 |
450 |
公司原装现货,热卖中! |
|||
IR |
22+ |
TO-247 |
26279 |
原装正品现货,可开13个点税 |
|||
IR |
22+ |
TO-247 |
9000 |
原装正品 |
|||
IR |
2013+ |
TO-247 |
450 |
公司原装现货,热卖中! |
|||
INFINEON |
20+ |
TO-247 |
26000 |
实单请给接受价 |
|||
HARRIS |
23+ |
TO-3P |
5000 |
原装正品,假一罚十 |
|||
IR |
24+ |
TO-247 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
IR |
24+ |
TO-247 |
10000 |
进口原装现货 |
|||
IR |
24+ |
SMD |
9600 |
原装现货,优势供应,支持实单! |
IRFP250规格书下载地址
IRFP250参数引脚图相关
- l101
- l100
- ku波段
- kt250
- kse13005
- ks20
- km710
- ka5q1265rf
- k9f1208
- k310
- k2698
- k233
- k2055
- k2010
- jumper
- jtag接口
- jk触发器
- j111
- j108
- isd1420
- IRFP448
- IRFP440
- IRFP362
- IRFP360
- IRFP354
- IRFP353
- IRFP352
- IRFP351
- IRFP350
- IRFP344
- IRFP340
- IRFP32N50KPBF
- IRFP3206PBF
- IRFP31N50LPBF
- IRFP3077PBF
- IRFP3006PBF
- IRFP2907ZPBF
- IRFP2907PBF
- IRFP27N60KPBF
- IRFP26N60LPBF
- IRFP264PBF
- IRFP264
- IRFP260PBF
- IRFP260NPBF
- IRFP260NHR
- IRFP260MPBF
- IRFP260
- IRFP257
- IRFP256
- IRFP255
- IRFP254PBF
- IRFP254
- IRFP253
- IRFP252
- IRFP251
- IRFP250PBF
- IRFP250NPBF
- IRFP250MPBF
- IRFP247
- IRFP246
- IRFP245
- IRFP244PBF
- IRFP244
- IRFP240PBF
- IRFP240
- IRFP23N50LPBF
- IRFP22N60KPBF
- IRFP22N50APBF
- IRFP21N60LPBF
- IRFP17N50LPBF
- IRFP153
- IRFP152
- IRFP151
- IRFP150PBF
- IRFP150NPBF
- IRFP150MPBF
- IRFP150A
- IRFP150
- IRFP140PBF
- IRFP140NPBF
- IRFP1405PBF
- IRFP140
- IRFP133
- IRFP132
- IRFP131
- IRFP130
- IRFP064PBF
- IRFP064NPBF
- IRFP064
- IRFP054PBF
- IRFP054
- IRFP048
- IRFP044
- IRFNG50
- IRFNG40
IRFP250数据表相关新闻
IRFP23N50LPBF
进口代理
2025-4-2IRFP260NPBF 丝印IRFP260N 封装TO-247 场效应管MOS 三极管
IRFP260NPBF丝印IRFP260N封装TO-247场效应管MOS三极管
2024-8-5IRFP064NPBF
IRFP064NPBF
2023-6-3IRFP140是一款性能优异的MOSFET晶体管,具有低导通电阻、高开关速度、高电压承受能力等特点,广泛应用于工业、消费电子、通信、电源等领域。
IRFP140是一款性能优异的MOSFET晶体管,具有低导通电阻、高开关速度、高电压承受能力等特点,广泛应用于工业、消费电子、通信、电源等领域。
2023-5-27IRFP260MPBF 原装正品现货 可追溯原厂 可含税出
IRFP260MPBF原装正品现货可追溯原厂可含税出
2020-11-20IRFP260MPBF公司原装现货/随时可以发货
瀚佳科技(深圳)有限公司专业为工厂一站式BOM配单服务
2019-4-26
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97