$GYDQFHG 3RZHU 026)(7

FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V ♦ Low RDS(ON): 0.108Ω (Typ.)

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 25A@ TC=25℃ • Drain Source Voltage- : VDSS= 250V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.14Ω(Max) • Fast Switching

$GYDQFHG 3RZHU 026)(7

Fuse Blocks and Clips - For NANO2 Surface Mount Fuses

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Two Axis, Micro-stick Controller With Optional Momentary Switch

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WILMAR??Protective Relays - 250 Series, Over/Undervoltage

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3M??Lapping Film Aluminum Oxide 254X

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Multi Tuner Set-Top Boxes

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