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型号 功能描述 生产厂家 企业 LOGO 操作
IRFP254B

250V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

FAIRCHILD

仙童半导体

IRFP254B

250V N-Channel MOSFET

ONSEMI

安森美半导体

N-channel enhancement mode vertical D-MOS transistors

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT54 (TO-92) variant package. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown • Low RDSon. APPLICATIONS • Line current interruptor in telephone sets • Relay, high-speed a

PHILIPS

飞利浦

P-channel enhancement mode vertical D-MOS transistor

DESCRIPTION P-channel vertical D-MOS transistor in a TO-92 variant envelope and intended for use as a line current interruptor in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown.

PHILIPS

飞利浦

P-channel enhancement mode vertical D-MOS transistor

DESCRIPTION P-channel vertical D-MOS transistor in a TO-92 variant envelope and intended for use as a line current interruptor in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown.

PHILIPS

飞利浦

MEDIUM CURRENT PLASTIC RECTIFIER(VOLTAGE - 200 to 1300 Volts CURRENT - 3.0 Amperes)

FEATURES ● Exce High surge current capability ● Plastic package has Underwriters Laboratory Flammability Classification 94V-O ● Low leakage ● Void-free molded in DO-201AD plastic package ● High current operation of 3 Amperes at TA=95 ¢J with no thermal runaway ● eds environmental standards o

PANJIT

強茂

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE253 (NPN) and NTE254 (PNP) are silicon complementary Darlington transistors in a TO126 type case designed for general–purpose amplifier and low–speed switching applications. Features: • High DC Current Gain: hFE = 2000 (Typ) @ IC = 2A • Monolithic Construction wit

NTE

IRFP254B产品属性

  • 类型

    描述

  • 型号

    IRFP254B

  • 功能描述

    MOSFET 250V N-Channel B-FET

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-5-15 15:11:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
onsemi(安森美)
25+
TO-3P
22360
样件支持,可原厂排单订货!
onsemi(安森美)
25+
TO-3P
22412
正规渠道,免费送样。支持账期,BOM一站式配齐
FAIRCHILD
23+
TO-3P
7000
仙童
06+
TO-247
3000
原装
IR
24+
TO-247AC
8866
IR
最新
TO-247
7823
原装进口现货库存专业工厂研究所配单供货
VISHAY
2018+
26976
代理原装现货/特价热卖!
FAIRCHILD
26+
TO-3P
9526
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
IR
22+
6000
终端可免费供样,支持BOM配单
VISHAY
25+
TO-247
20000
百分百原装正品 真实公司现货库存 本公司只做原装 可

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