N-Channel Power Mosfets

High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series

FEATURES: • Fast switching times • Low RDS(on) HDMOS™ process • Rugged polysilicon gate cell structure • Excellent high voltage stability • Low input capacitance • Improved high temperature reliability APPLICATIONS: • Switching power supplies • Motor controls • Audio Amplifiers • Invert

N-Channel(Hexfet Transistors)

isc N-Channel MOSFET Transistor

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N-channel power MOSFET, 150V, 30A

PNP video transistor

DESCRIPTION PNP video transistor in a SOT54 (TO-92) plastic package. NPN complement: BFQ231. FEATURES • High breakdown voltages • Low output capacitance • High gain bandwidth • Good thermal stability • Gold metallization ensures excellent reliability. APPLICATIONS • Buffer/driver in high

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE251 (NPN) and NTE252 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general–purpose amplifier and low–frequency switching applications. Features: • High DC Current Gain @ IC = 10A: hFE = 2400 Typ (NTE251) hFE = 4000

Ultra Bright GaAIAs Lamps

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Ultra Bright GaAIAs Lamps

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Square Type

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