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IRFP254N中文资料
IRFP254N数据手册规格书PDF详情
DESCRIPTION
Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that these Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.
FEATURES
• Advanced Process Technology
• Dynamic dV/dt Rating
• 175 °C Operating Temperature
• Fully Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
IRFP254N产品属性
- 类型
描述
- 型号
IRFP254N
- 功能描述
MOSFET N-Chan 250V 23 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
VISHAY/威世 |
23+/24+ |
TO-247 |
9865 |
原装MOS管(场效应管). |
|||
VISHAY/威世 |
23+ |
TO247 |
47822 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
VISHAY/威世 |
23+ |
TO-247TO-3P |
7000 |
||||
VISHAY |
25+ |
TO-247 |
20000 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
VISHAY |
2018+ |
26976 |
代理原装现货/特价热卖! |
||||
VISHAY |
25+ |
TO247-3 |
3000 |
就找我吧!--邀您体验愉快问购元件! |
|||
VISHAY/威世 |
2023+ |
TO-247 |
20000 |
全新原装正品,优势价格 |
|||
VISHAY/威世 |
24+ |
NA/ |
5828 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
IR |
23+ |
TO-247 |
65400 |
||||
IR |
24+ |
TO-247 |
4 |
只做原厂渠道 可追溯货源 |
IRFP254N 资料下载更多...
IRFP254N 芯片相关型号
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- VHD200T2KTCR2BAB
- VHD200T2KTCR2TAB
- XC6122F324EL
- XC6122F424EL
- XC6205F09AML
- XC6205H09AML
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