Features

 Advanced Process Technology

 Dynamic dv/dt Rating

 175°C Operating Temperature

 Fast Switching

 Fully Avalanche Rated

 Ease of Paralleling

 Simple Drive Requirements

 Lead-Free

Description

IR MOSFET™ technology from Infineon utilizes

advanced processing techniques to achieve extremely

low on-resistance per silicon area. This benefit,

combined with the fast switching speed and rugged

device design that IR MOSFET™ devices are well

known for, provides the designer with an extremely

efficient and reliable device for use in a wide variety of

applications.

The TO-247 package is preferred for commercialindustrial

applications where higher power levels

preclude the use of TO-220 devices. The TO-247 is

similar but superior to the earlier TO-218 package

because of its isolated mounting hole.