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位置：首页 > IC中文资料第3183页 > IRF9Z24

IRF9Z24价格

参考价格：￥1.5816

型号：IRF9Z24NPBF 品牌：INTERNATIONAL 备注：这里有IRF9Z24多少钱，2025年最近7天走势，今日出价，今日竞价，IRF9Z24批发/采购报价，IRF9Z24行情走势销售排行榜，IRF9Z24报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRF9Z24

POWER MOSFET

Description Third Generation HEXFETs International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissi

IRF

IRF9Z24

P-CHANNEL POWER MOSFETs

FEATURES • Lower RDS(ON) • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high tmeperature reliability

Samsung

三星

IRF9Z24

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipa

VishayVishay Siliconix

威世科技

IRF9Z24

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -11A@ TC=25℃ · Drain Source Voltage -VDSS= -60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.28Ω(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

IRF9Z24

Power MOSFET

文件：277.52 Kbytes Page：9 Pages

VishayVishay Siliconix

威世科技

IRF9Z24

isc N-Channel MOSFET Transistor

文件：280.77 Kbytes Page：2 Pages

ISC

无锡固电

IRF9Z24

Power MOSFET

文件：158.74 Kbytes Page：8 Pages

VishayVishay Siliconix

威世科技

IRF9Z24

Power MOSFET

VishayVishay Siliconix

威世科技

IRF9Z24

POWER MOSFET

Infineon

英飞凌

IRF9Z24L

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

VishayVishay Siliconix

威世科技

IRF9Z24L

Power MOSFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-11A)

Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

IRF9Z24L

Advanced Process Technology

Description The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. ● Advanced Process Te

KERSEMI

IRF9Z24LPBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

VishayVishay Siliconix

威世科技

IRF9Z24N

Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

IRF9Z24N

-55V P-Channel MOSFET

Features VDS (V) =-55V ID = -12A (VGS = -10V) RDS(ON)

UMW

友台半导体

IRF9Z24NL

Advanced Process Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

IRF9Z24NL

Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

IRF9Z24NLPBF

HEXFET Power MOSFET

IRF

IRF9Z24NPBF

HEXFET Power MOSFET

IRF

IRF9Z24NS

Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

IRF9Z24NS

Advanced Process Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

IRF9Z24NSPBF

HEXFET Power MOSFET

IRF

IRF9Z24NSTRR

Advanced Process Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

IRF9Z24PBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipa

VishayVishay Siliconix

威世科技

IRF9Z24S

Power MOSFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-11A)

Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

IRF9Z24S

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

VishayVishay Siliconix

威世科技

IRF9Z24S

Power MOSFET

FEATURES • Advanced process technology • Surface mount (IRF9Z24S, SiHF9Z24S) • 175 °C operating temperature • Fast switching • P-channel • Fully avalanche rated • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides in

VishayVishay Siliconix

威世科技

IRF9Z24S_V01

Power MOSFET

FEATURES • Advanced process technology • Surface mount (IRF9Z24S, SiHF9Z24S) • 175 °C operating temperature • Fast switching • P-channel • Fully avalanche rated • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides in

VishayVishay Siliconix

威世科技

IRF9Z24SPBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

VishayVishay Siliconix

威世科技

IRF9Z24STRL

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

VishayVishay Siliconix

威世科技

IRF9Z24STRLPBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

VishayVishay Siliconix

威世科技

IRF9Z24STRR

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

VishayVishay Siliconix

威世科技

IRF9Z24STRRPBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

VishayVishay Siliconix

威世科技

IRF9Z24_17

Power MOSFET

文件：277.52 Kbytes Page：9 Pages

VishayVishay Siliconix

威世科技

IRF9Z24_V01

Power MOSFET

文件：158.74 Kbytes Page：8 Pages

VishayVishay Siliconix

威世科技

IRF9Z24N

Advanced Process Technology

文件：720.61 Kbytes Page：8 Pages

KERSEMI

IRF9Z24N

-55V 单个 P 通道 HEXFET Power MOSFET, 采用 TO-220AB 封装

Infineon

英飞凌

IRF9Z24NLPBF

Advanced Process Technology

文件：395.11 Kbytes Page：11 Pages

IRF

IRF9Z24NLPBF

ADVANCED PROCESS TECHNOLOGY

文件：395.11 Kbytes Page：11 Pages

IRF

IRF9Z24NPBF

Lead-Free

文件：511.09 Kbytes Page：9 Pages

IRF

IRF9Z24NPBF_15

Lead-Free

文件：511.09 Kbytes Page：9 Pages

IRF

IRF9Z24NS

Advanced Process Technology

文件：1.09621 Mbytes Page：10 Pages

KERSEMI

IRF9Z24NS

P-Channel 60 V (D-S) MOSFET

文件：931.36 Kbytes Page：7 Pages

VBSEMI

微碧半导体

IRF9Z24NSPBF

Advanced Process Technology

文件：395.11 Kbytes Page：11 Pages

IRF

IRF9Z24NSPBF

ADVANCED PROCESS TECHNOLOGY

文件：395.11 Kbytes Page：11 Pages

IRF

IRF9Z24NSPBF_15

ADVANCED PROCESS TECHNOLOGY

文件：395.11 Kbytes Page：11 Pages

IRF

IRF9Z24NSTRLPBF

Advanced Process Technology

文件：395.11 Kbytes Page：11 Pages

IRF

IRF9Z24PBF

power mosfet

文件：1.50137 Mbytes Page：8 Pages

IRF

IRF9Z24PBF

Power MOSFET

文件：158.74 Kbytes Page：8 Pages

VishayVishay Siliconix

威世科技

IRF9Z24PBF-BE3

Power MOSFET

文件：158.74 Kbytes Page：8 Pages

VishayVishay Siliconix

威世科技

IRF9Z24SPBF

Power MOSFET

文件：207.54 Kbytes Page：9 Pages

VishayVishay Siliconix

威世科技

IRF9Z24STRLPBFA

Power MOSFET

文件：207.54 Kbytes Page：9 Pages

VishayVishay Siliconix

威世科技

IRF9Z24STRRPBFA

Power MOSFET

文件：207.54 Kbytes Page：9 Pages

VishayVishay Siliconix

威世科技

IRF9Z24产品属性

  • 类型

    描述

  • 型号

    IRF9Z24

  • 功能描述

    MOSFET P-Chan 60V 11 Amp

  • RoHS

    否

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS（导通）

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

IRF9Z24供应商更多...

更新时间：2025-9-26 22:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市得捷芯城科技有限公司
IRF9Z24SPBF
Vishay(威世)
24+
NA/
8735
原厂直销,现货供应,账期支持!
询价
深圳市高捷芯城科技有限公司
IRF9Z24SPBF
VISHAY(威世)
24+
TO2633
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
询价
深圳市凌旭科技有限公司
IRF9Z24N
IR
2016+
TO220
3000
只做原装,假一罚十,公司可开17%增值税发票!
询价
上海意淼电子科技有限公司
IRF9Z24NPBF
INFINEON
23+
K-B
123000
只有原装,请来电咨询
询价
深圳市纳艾斯科技有限公司
IRF9Z24N
IR
24+
TO-220
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
询价
深圳市羿芯诚电子有限公司
IRF9Z24NPBF
INFINEON/英飞凌
24+
TO-220
19252
SSCP认证 原装现货
询价
深圳市科芯源微电子有限公司
IRF9Z24NPBF
INFINEON/英飞凌
25+
TO-220
54648
百分百原装现货 实单必成 欢迎询价
询价
深圳市金芯世纪电子有限公司
IRF9Z24N
INFINEON/英飞凌
22+
TO-220
100000
代理渠道/只做原装/可含税
询价
深圳市联世界科技有限公司
IRF9Z24N
INFINEON
24+/25+
TO-220
50000
热卖原装现货库存质量保证,下单秒发货,现货告急先到先得13714450367
询价
中天科工半导体（深圳）有限公司
IRF9Z24NPBF
IR/VISHAY
25+
TO-220
45000
IR/VISHAY全新现货IRF9Z24NPBF即刻询购立享优惠#长期有排单订
询价

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  • IRFB3607PBF

    深圳市科恒伟业电子有限公司 深圳市福田区华强北振兴路101号华匀大厦2栋5楼516 网站 http://www.kehengweiyedz.cn 网站http://www.kehengweiye.com 邮箱：yulin522@126.com 0755-83200050 15817287769 柯先生

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