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IRF9Z24STRL中文资料
IRF9Z24STRL数据手册规格书PDF详情
DESCRIPTION
Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
FEATURES
• Halogen-free According to IEC 61249-2-21 Definition
• Advanced Process Technology
• Surface Mount (IRF9Z24S, SiHF9Z24S)
• Low-Profile Through-Hole (IRF9Z24L, SiHF9Z24L)
• 175 °C Operating Temperature
• Fast Switching
• P-Channel
• Fully Avalanche Rated
• Compliant to RoHS Directive 2002/95/EC
IRF9Z24STRL产品属性
- 类型
描述
- 型号
IRF9Z24STRL
- 功能描述
MOSFET P-CH 60V 11A D2PAK
- RoHS
否
- 类别
分离式半导体产品 >> FET - 单
- 系列
-
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY |
25+ |
TO-263 |
3000 |
就找我吧!--邀您体验愉快问购元件! |
|||
Vishay Siliconix |
22+ |
TO2633 D2Pak (2 Leads + Tab) T |
9000 |
原厂渠道,现货配单 |
|||
Vishay Siliconix |
23+ |
TO2633 D2Pak (2 Leads + Tab) T |
9000 |
原装正品，支持实单 |
|||
VISHAY |
25+23+ |
TO263 |
72179 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
VishayIR |
24+ |
TO-263 |
4800 |
||||
IR |
SOT-263 |
30216 |
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S |
||||
INTERNATIONA |
05+ |
原厂原装 |
4300 |
只做全新原装真实现货供应 |
|||
NK/南科功率 |
2025+ |
TO263 |
986966 |
国产 |
|||
I |
24+ |
D2PAK |
5000 |
全现原装公司现货 |
|||
IR |
23+ |
TO-263 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
IRF9Z24STRL 资料下载更多...
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