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位置：首页 > IC中文资料第624页 > IRF9Z24N

IRF9Z24N价格

参考价格：￥1.5816

型号：IRF9Z24NPBF 品牌：INTERNATIONAL 备注：这里有IRF9Z24N多少钱，2025年最近7天走势，今日出价，今日竞价，IRF9Z24N批发/采购报价，IRF9Z24N行情走势销售排行榜，IRF9Z24N报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRF9Z24N

Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

IRF9Z24N

-55V P-Channel MOSFET

Features VDS (V) =-55V ID = -12A (VGS = -10V) RDS(ON)

UMW

友台半导体

IRF9Z24N

-55V 单个 P 通道 HEXFET Power MOSFET, 采用 TO-220AB 封装

Infineon

英飞凌

IRF9Z24N

Advanced Process Technology

文件：720.61 Kbytes Page：8 Pages

KERSEMI

IRF9Z24

POWER MOSFET

Description Third Generation HEXFETs International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissi

IRF

IRF9Z24

P-CHANNEL POWER MOSFETs

FEATURES • Lower RDS(ON) • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high tmeperature reliability

Samsung

三星

IRF9Z24

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipa

VishayVishay Siliconix

威世科技

IRF9Z24

Power MOSFET

文件：277.52 Kbytes Page：9 Pages

VishayVishay Siliconix

威世科技

IRF9Z24

isc N-Channel MOSFET Transistor

文件：280.77 Kbytes Page：2 Pages

ISC

无锡固电

IRF9Z24NL

Advanced Process Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

IRF9Z24NL

Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

IRF9Z24NLPBF

HEXFET Power MOSFET

IRF

IRF9Z24NPBF

HEXFET Power MOSFET

IRF

IRF9Z24NS

Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

IRF9Z24NS

Advanced Process Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

IRF9Z24NSPBF

HEXFET Power MOSFET

IRF

IRF9Z24NSTRR

Advanced Process Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

IRF9Z24NLPBF

ADVANCED PROCESS TECHNOLOGY

文件：395.11 Kbytes Page：11 Pages

IRF

IRF9Z24NLPBF

ADVANCED PROCESS TECHNOLOGY

Infineon

英飞凌

IRF9Z24NLPBF

Advanced Process Technology

文件：395.11 Kbytes Page：11 Pages

IRF

IRF9Z24NPBF

Lead-Free

文件：511.09 Kbytes Page：9 Pages

IRF

IRF9Z24NPBF_15

Lead-Free

文件：511.09 Kbytes Page：9 Pages

IRF

IRF9Z24NS

-55V 单个 N 通道 HEXFET Power MOSFET, 采用 D2-Pak 封装

Infineon

英飞凌

IRF9Z24NS

P-Channel 60 V (D-S) MOSFET

文件：931.36 Kbytes Page：7 Pages

VBSEMI

微碧半导体

IRF9Z24NS

Advanced Process Technology

文件：1.09621 Mbytes Page：10 Pages

KERSEMI

IRF9Z24NSPBF

Advanced Process Technology

文件：395.11 Kbytes Page：11 Pages

IRF

IRF9Z24NSPBF

ADVANCED PROCESS TECHNOLOGY

文件：395.11 Kbytes Page：11 Pages

IRF

IRF9Z24NSPBF_15

ADVANCED PROCESS TECHNOLOGY

文件：395.11 Kbytes Page：11 Pages

IRF

IRF9Z24NSTRLPBF

Advanced Process Technology

文件：395.11 Kbytes Page：11 Pages

IRF

IRF9Z24N产品属性

  • 类型

    描述

  • 型号

    IRF9Z24N

  • 制造商

    International Rectifier

  • 功能描述

    MOSFET P TO-220

IRF9Z24N供应商更多...

更新时间：2025-9-26 20:52:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市羿芯诚电子有限公司
IRF9Z24NPBF
INFINEON/英飞凌
24+
TO-220
19252
SSCP认证 原装现货
询价
深圳市金芯世纪电子有限公司
IRF9Z24N
INFINEON/英飞凌
22+
TO-220
100000
代理渠道/只做原装/可含税
询价
深圳市得捷芯城科技有限公司
IRF9Z24NSTRR
IR
24+
NA/
5250
原装现货,当天可交货,原型号开票
询价
深圳市科芯源微电子有限公司
IRF9Z24NPBF
INFINEON/英飞凌
25+
TO-220
54648
百分百原装现货 实单必成 欢迎询价
询价
深圳市联世界科技有限公司
IRF9Z24N
INFINEON
24+/25+
TO-220
50000
热卖原装现货库存质量保证,下单秒发货,现货告急先到先得13714450367
询价
中天科工半导体（深圳）有限公司
IRF9Z24NPBF
IR/VISHAY
25+
TO-220
45000
IR/VISHAY全新现货IRF9Z24NPBF即刻询购立享优惠#长期有排单订
询价
深圳市威雅利发展有限公司
IRF9Z24NSTRRPBF
IR
18+
TO-263
800
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
深圳市力拓辉电子有限公司
IRF9Z24NS
IOR
22+
TO-263
5000
只做原装,假一赔十
询价
深圳市科恒伟业电子有限公司
IRF9Z24NSTRLPBF
INFINEON/英飞凌
23+
TO-263
6500
只做原装正品现货或订货假一赔十!
询价
深圳市纳立科技有限公司
IRF9Z24NPBF
IR
三年内
1983
只做原装正品
询价

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