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IRF9Z24SPBF中文资料
IRF9Z24SPBF数据手册规格书PDF详情
DESCRIPTION
Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
FEATURES
• Halogen-free According to IEC 61249-2-21 Definition
• Advanced Process Technology
• Surface Mount (IRF9Z24S, SiHF9Z24S)
• Low-Profile Through-Hole (IRF9Z24L, SiHF9Z24L)
• 175 °C Operating Temperature
• Fast Switching
• P-Channel
• Fully Avalanche Rated
• Compliant to RoHS Directive 2002/95/EC
IRF9Z24SPBF产品属性
- 类型
描述
- 型号
IRF9Z24SPBF
- 功能描述
MOSFET P-Chan 60V 11 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
25+ |
原装 |
32360 |
VISHAY/威世全新特价IRF9Z24SPBF即刻询购立享优惠#长期有货 |
|||
VISHAY(威世) |
24+ |
TO-263-3 |
7828 |
支持大陆交货,美金交易。原装现货库存。 |
|||
VISHAY |
25+ |
TO-263 |
3675 |
就找我吧!--邀您体验愉快问购元件! |
|||
Vishay |
23+ |
IGBT |
5864 |
原装原标原盒 给价就出 全网最低 |
|||
VISHAY |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
Vishay Siliconix |
2025+ |
D2PAK(TO-263) |
56303 |
||||
VISHAY/威世 |
2450+ |
NA |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
VISHAY/威世 |
2447 |
TO263 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
Vishay(威世) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
Vishay Siliconix |
22+ |
TO2633 D2Pak (2 Leads + Tab) T |
9000 |
原厂渠道,现货配单 |
IRF9Z24SPBF 价格
参考价格：￥3.4325
IRF9Z24SPBF 资料下载更多...
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- MAL202139108E3
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- RNCH10R0BPRSL
- RNCH2152BPRSL
- RNCK10R0DPRSL
- SDR9510NUBTXV
- SIHF9Z14STL-E3
- XC6122F736ML
- XC6205F30APR
- XO27CTEH604M
Datasheet数据表PDF页码索引
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