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IRF9Z24STRRPBF中文资料
IRF9Z24STRRPBF数据手册规格书PDF详情
DESCRIPTION
Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
FEATURES
• Halogen-free According to IEC 61249-2-21 Definition
• Advanced Process Technology
• Surface Mount (IRF9Z24S, SiHF9Z24S)
• Low-Profile Through-Hole (IRF9Z24L, SiHF9Z24L)
• 175 °C Operating Temperature
• Fast Switching
• P-Channel
• Fully Avalanche Rated
• Compliant to RoHS Directive 2002/95/EC
IRF9Z24STRRPBF产品属性
- 类型
描述
- 型号
IRF9Z24STRRPBF
- 功能描述
MOSFET P-Chan 60V 11 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
08+ |
TO-263 |
8000 |
深圳原装进口无铅现货 |
|||
VISHAY |
25+23+ |
TO-263 |
26928 |
绝对原装正品全新进口深圳现货 |
|||
VISHAY |
25+ |
TO-263 |
1675 |
就找我吧!--邀您体验愉快问购元件! |
|||
VISHAY |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
VISHAY |
23+ |
TO-263 |
10500 |
原厂原装正品 |
|||
VISHAY/威世 |
24+ |
NA/ |
8000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
Vishay Siliconix |
22+ |
TO2633 D2Pak (2 Leads + Tab) T |
9000 |
原厂渠道,现货配单 |
|||
VISHAY/威世 |
23+ |
TO-263 |
50000 |
全新原装正品现货,支持订货 |
|||
IR |
2450+ |
TO-263 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
IR |
24+ |
TO-263 |
1600 |
只做原厂渠道 可追溯货源 |
IRF9Z24STRRPBF 价格
参考价格：￥5.2834
IRF9Z24STRRPBF 资料下载更多...
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