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IRF9Z24S价格
参考价格：￥3.4325
型号：IRF9Z24SPBF 品牌：VISHAY 备注：这里有IRF9Z24S多少钱，2025年最近7天走势，今日出价，今日竞价，IRF9Z24S批发/采购报价，IRF9Z24S行情走势销售排行榜，IRF9Z24S报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRF9Z24S | Power MOSFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-11A) Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF |   | |
IRF9Z24S | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit | VishayVishay Siliconix 威世科技 | | |
IRF9Z24S | Power MOSFET FEATURES • Advanced process technology • Surface mount (IRF9Z24S, SiHF9Z24S) • 175 °C operating temperature • Fast switching • P-channel • Fully avalanche rated • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides in | VishayVishay Siliconix 威世科技 | | |
IRF9Z24S | Power MOSFET | VishayVishay Siliconix 威世科技 | | |
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipa | VishayVishay Siliconix 威世科技 | | ||
POWER MOSFET Description Third Generation HEXFETs International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissi | IRF | | ||
P-CHANNEL POWER MOSFETs FEATURES • Lower RDS(ON) • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high tmeperature reliability | Samsung 三星 | | ||
Power MOSFET 文件：277.52 Kbytes Page：9 Pages | VishayVishay Siliconix 威世科技 | | ||
isc N-Channel MOSFET Transistor 文件：280.77 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Power MOSFET FEATURES • Advanced process technology • Surface mount (IRF9Z24S, SiHF9Z24S) • 175 °C operating temperature • Fast switching • P-channel • Fully avalanche rated • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides in | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET 文件：207.54 Kbytes Page：9 Pages | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET 文件：207.54 Kbytes Page：9 Pages | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET 文件：207.54 Kbytes Page：9 Pages | VishayVishay Siliconix 威世科技 | |
IRF9Z24S产品属性
- 类型
描述
- 型号
IRF9Z24S
- 功能描述
MOSFET P-Chan 60V 11 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
25+ |
原装 |
32360 |
VISHAY/威世全新特价IRF9Z24SPBF即刻询购立享优惠#长期有货 |
|||
Vishay Siliconix |
22+ |
TO2633 D2Pak (2 Leads + Tab) T |
9000 |
原厂渠道,现货配单 |
|||
IR |
24+ |
D2-Pak |
27500 |
原装正品,价格最低! |
|||
IR |
SOT-263 |
30216 |
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S |
||||
IR |
23+ |
D2-Pak |
19526 |
||||
NK/南科功率 |
2025+ |
TO-263 |
986966 |
国产 |
|||
IR |
2025+ |
TO-263-2 |
5425 |
全新原厂原装产品、公司现货销售 |
|||
IR |
24+ |
NA/ |
6961 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
VISHAY(威世) |
24+ |
TO-263-3 |
7828 |
支持大陆交货,美金交易。原装现货库存。 |
|||
IR |
24+ |
TO-263 |
1600 |
只做原厂渠道 可追溯货源 |
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IRF9Z24S规格书下载地址
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深圳市科恒伟业电子有限公司 深圳市福田区华强北振兴路101号华匀大厦2栋5楼516 网站 http://www.kehengweiyedz.cn 网站http://www.kehengweiye.com 邮箱：yulin522@126.com 0755-83200050 15817287769 柯先生
2020-4-18IRFB3607PBF
深圳市科恒伟业电子有限公司 深圳市福田区华强北振兴路101号华匀大厦2栋5楼516 网站 http://www.kehengweiyedz.cn 网站http://www.kehengweiye.com 邮箱：yulin522@126.com 0755-83200050 15817287769 柯先生
2020-4-18
DdatasheetPDF页码索引
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