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IRF9Z24S中文资料
IRF9Z24S数据手册规格书PDF详情
Description
Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
● Advanced Process Technology
● Surface Mount (IRF9Z24S)
● Low-profile through-hole (IRF9Z24L)
● 175°C Operating Temperature
● Fast Switching
● P- Channel
● Fully Avalanche Rated
IRF9Z24S产品属性
- 类型
描述
- 型号
IRF9Z24S
- 功能描述
MOSFET P-Chan 60V 11 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
25+ |
原装 |
32360 |
VISHAY/威世全新特价IRF9Z24SPBF即刻询购立享优惠#长期有货 |
|||
IR |
SOT-263 |
30216 |
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S |
||||
IR |
24+ |
TO-263 |
1600 |
只做原厂渠道 可追溯货源 |
|||
VISHAY(威世) |
24+ |
TO-263-3 |
7828 |
支持大陆交货,美金交易。原装现货库存。 |
|||
IR |
24+ |
TO-263 |
160825 |
明嘉莱只做原装正品现货 |
|||
VISHAY/威世 |
08+ |
TO-263 |
8000 |
深圳原装进口无铅现货 |
|||
IR |
2450+ |
TO-263 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
IR |
06+ |
TO-263 |
6000 |
全新原装 绝对有货 |
|||
VIS |
23+ |
TO263 |
5000 |
原装正品,假一罚十 |
|||
A |
24+ |
b |
9000 |
IRF9Z24STRRPBF 价格
参考价格：￥5.2834
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IRF9Z24S 芯片相关型号
Datasheet数据表PDF页码索引
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