IRF720价格

参考价格:¥12.5883

型号:IRF720 品牌:Vishay 备注:这里有IRF720多少钱,2025年最近7天走势,今日出价,今日竞价,IRF720批发/采购报价,IRF720行情走势销售排行榜,IRF720报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IRF720

N-CHANNELPOWERMOSFETS

FEATURES •LowerRDS(on) •Improvedinductiveruggedness •Fastswitchingtimes •Ruggedpolysilicongatecellstructure •Lowerinputcapacitance •Extendedsafeoperationarea •Improvedhightemperaturereliability

SamsungSamsung semiconductor

三星三星半导体

Samsung
IRF720

N-ChannelPowerMOSFETs,3.0A,350-400V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspaedapplications,suchasoff-lineswitchingpowersupplies,ACandDCmotorcontrols,relayandsolenoiddriversanddriversandotherpulsecircuits. •LowRDs(on) •VGS

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
IRF720

TRANSISTORSN-CHANNEL

400Volt,1.8OhmHEXFETTO-220ABPlasticPackage TheHEXFET®technologyisthekeytoInternationalRectifiersadvancedlineofpowerMOSFETtransistor. FEATURES: ■RepetitiveAvalancheRatings ■Dynamicdv/dtRatings ■SimpleDriveRequirement ■EaseofParalleling

IRF

International Rectifier

IRF
IRF720

3.3A,400V,1.800Ohm,N-ChannelPowerMOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

Intersil

Intersil Corporation

Intersil
IRF720

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
IRF720

iscN-ChannelMOSFETTransistor

DESCRITION ·Designedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. FEATURES ·LowRDS(on) ·VGSRatedat±20V ·SiliconGateforFastSwitchingSpeed ·Rugged ·LowDriveRequirements

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
IRF720

400Volt,1.8OhmHEXFETTO-220ABPlasticPackage

400Volt,1.8OhmHEXFETTO-220ABPlasticPackage TheHEXFETtransistorsalsofeatureallofthewellestablishedadvantagesofMOSFETssuchasvoltagecontrol,veryfastswitching,easeofparallelingandtemperaturestabilityoftheelectricalparameters. Theyarewellsuitedforapplications

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
IRF720

N-ChannelPowerMOSFETs

文件:333.66 Kbytes Page:6 Pages

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

ARTSCHIP
IRF720

SEMICONDUCTORS

文件:2.43533 Mbytes Page:31 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

etc2
IRF720

N-channelenhancementmodepowermostransistors

文件:343.23 Kbytes Page:6 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

HEXFETPowerMOSFET

Description FifthGenerationHEXFET®powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETMOSFETsarewellknownfo

IRF

International Rectifier

IRF

HEXFET짰PowerMOSFET

Description FifthGenerationHEXFET®powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETMOSFETsarewellknownfo

IRF

International Rectifier

IRF

GenerationVTechnology

Description FifthGenerationHEXFET®powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETMOSFETsarewellknownfo

IRF

International Rectifier

IRF

-30VP-ChannelEnhancementModeMOSFET

GeneralDescription: TheIRF7204isthesingleP-Channellogic enhancementmodepowerfieldeffecttransistorstoprovideexcellentRDS(on),lowgatechargeandlow gateresistance.It’supto-30Voperationvoltageiswell suitedinswitchingmodepowersupply,SMPS,notebookcomputerpowerm

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊欧翊欧半导体

EVVOSEMI

PowerMOSFET(Vdss=-20V,Rds(on)=0.060ohm,Id=-5.3A)

Description FourthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor

IRF

International Rectifier

IRF

HEXFET짰PowerMOSFET

Description FourthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,

IRF

International Rectifier

IRF

-30VP-ChannelEnhancementModeMOSFET

Features: RDS(ON)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

UMW

HEXFETPowerMOSFET

Features •AdavancedProcessTechnology •UltraLowOn-Resistance •P-ChannelMOSFET •SurfaceMount •Dynamicdv/dtRating •FastSwitching

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

HEXFETPowerMOSFET

Description FourthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor

IRF

International Rectifier

IRF

P-ChannelMOSFET

Features •AdavancedProcessTechnology •UltraLowOn-Resistance •P-ChannelMOSFET •SurfaceMount •Dynamicdv/dtRating •FastSwitching

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

AdavancedProcessTechnology

Description FourthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,

IRF

International Rectifier

IRF

HEXFETPowerMOSFET

Description FourthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,

IRF

International Rectifier

IRF

AdavancedProcessTechnology

Description FourthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,

IRF

International Rectifier

IRF

HEXFETPowerMOSFET

Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn

IRF

International Rectifier

IRF

Generation5Technology

Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn

IRF

International Rectifier

IRF

HEXFET짰PowerMOSFET

Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn

IRF

International Rectifier

IRF

Generation5Technology

Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn

IRF

International Rectifier

IRF

P-channelEnhancementModePowerMOSFET

Features VDS=-20V,ID=-13A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

Bychip

AdvancedPowerMOSFET(400V,1.8ohm,3.3A)

AdvancedPowerMOSFET(400V,1.8ohm,3.3A) FEATURES ♦AvalancheRuggedTechnology ♦RuggedGateOxideTechnology ♦LowerInputCapacitance ♦ImprovedGateCharge ♦ExtendedSafeOperatingArea ♦LowerLeakageCurrent:10µA(Max.)@VDS=400V ♦LowerRDS(ON):1.408Ω(Typ.)

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

400VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

PowerMOSFET

FEATURES •Surface-mount •Availableintapeandreel •Dynamicdv/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatashee

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

PowerMOSFET

FEATURES •Surface-mount •Availableintapeandreel •Dynamicdv/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatashee

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovi

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

PowerMOSFET

FEATURES •Surface-mount •Availableintapeandreel •Dynamicdv/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatashee

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

HEXFETPOWERMOSFET(VDSS=400V,RDS(on)=1.8廓,ID=3.3A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. •SurfaceMount •AvailableinTape&Reel •DynamicdV/dtRating •RepetitiveAvalanch

IRF

International Rectifier

IRF

UltraLowOn-Resistance

文件:644.03 Kbytes Page:7 Pages

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

GenerationVTechnology

文件:179.34 Kbytes Page:7 Pages

IRF

International Rectifier

IRF

GenerationVTechnology

文件:179.34 Kbytes Page:7 Pages

IRF

International Rectifier

IRF

GenerationVTechnology

文件:179.34 Kbytes Page:7 Pages

IRF

International Rectifier

IRF

ADVANCEDPROCESSTECHNOLOGY

文件:249.27 Kbytes Page:9 Pages

IRF

International Rectifier

IRF

ADVANCEDPROCESSTECHNOLOGY

文件:249.27 Kbytes Page:9 Pages

IRF

International Rectifier

IRF

AdavancedProcessTechnology

文件:249.27 Kbytes Page:9 Pages

IRF

International Rectifier

IRF

P-Channel20-V(D-S)MOSFET

文件:2.01837 Mbytes Page:9 Pages

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

ULTRALOWONRESISTANCE

文件:278.95 Kbytes Page:9 Pages

IRF

International Rectifier

IRF

ULTRALOWONRESISTANCE

文件:278.95 Kbytes Page:9 Pages

IRF

International Rectifier

IRF

Industry-standardpinoutSO-8Package

文件:279.5 Kbytes Page:9 Pages

IRF

International Rectifier

IRF

Industry-standardpinoutSO-8Package

文件:279.5 Kbytes Page:9 Pages

IRF

International Rectifier

IRF

P-Channel30-V(D-S)MOSFET

文件:1.08239 Mbytes Page:8 Pages

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

Generation5Technology

文件:177.2 Kbytes Page:7 Pages

IRF

International Rectifier

IRF

N-ChannelMosfetTransistor

文件:203.67 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

iscN-ChannelMOSFETTransistor

文件:64.33 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

N-channelenhancementmodepowermostransistors

文件:343.23 Kbytes Page:6 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

PowerMOSFET

文件:255.7 Kbytes Page:10 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

PowerMOSFET

文件:255.7 Kbytes Page:10 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

HEXFETPOWERMOSFET

文件:372.09 Kbytes Page:8 Pages

IRF

International Rectifier

IRF

PowerMOSFET

文件:255.7 Kbytes Page:10 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

WILMAR??ProtectiveRelays-700Series

SeveraltypesofReversePowerRelaysareavailableincludingrelayssensitivetoreversereactivepower(KVAR).WILMARistheleadingbrandofreversepowerrelays.Ourruggedsealedconstructionprovidescontinuousandreliableoperationunaffectedbyshock,vibrationorothersevereenvironmen

MACOMTyco Electronics

玛科姆技术方案控股有限公司

MACOM

PUSHBUTTONSWITCHES

文件:105.21 Kbytes Page:1 Pages

E-SWITCH

E-switch

E-SWITCH

TripodMountingLug

文件:96.88 Kbytes Page:1 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

etc2

IRF720产品属性

  • 类型

    描述

  • 型号

    IRF720

  • 功能描述

    MOSFET N-Chan 400V 3.0 Amp

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-6-10 19:09:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
24+
TO 220
160906
明嘉莱只做原装正品现货
IR
24+
SOP-8
14873
保证进口原装现货假一赔十
IR
22+
SOP-8
10000
只做原装承诺假一罚十
IR
24+
SOP-8
45000
热卖优势现货
IRF
24+
SOP-8
8150
绝对原装现货,价格低,欢迎询购!
INFINEON/英飞凌
20+
SOP-8
38700
深圳原装无铅现货正规报关
INFINEON/英飞凌
23+
SOP8
52000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
IR
24+
TO-263
501318
免费送样原盒原包现货一手渠道联系
IR(国际整流器)
24+
N/A
13840
原厂可订货,技术支持,直接渠道。可签保供合同
IR
24+
SOIC8
48650
优势价格公司库存~!!

IRF720芯片相关品牌

  • ADVANTECH
  • AICTECH
  • AXIOMTEK
  • bookham
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  • Maxim
  • PYRAMID
  • SOCAY
  • TEMEX
  • TURCK
  • ZETTLER

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