N-CHANNEL POWER MOSFETS

FEATURES • Lower RDS(on) • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operation area • Improved high temperature reliability

N-Channel Power MOSFETs, 3.0 A, 350-400 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high voltage, high spaed applications, such as off-line switching power supplies, AC and DC motor controls, relay and solenoid drivers and drivers and other pulse circuits. • Low RDs(on) • VGS

TRANSISTORS N-CHANNEL

400 Volt, 1.8 Ohm HEXFET TO-220AB Plastic Package The HEXFET® technology is the key to International Rectifiers advanced line of power MOSFET transistor. FEATURES: ■ Repetitive Avalanche Ratings ■ Dynamic dv/dt Ratings ■ Simple Drive Requirement ■ Ease of Paralleling

3.3A, 400V, 1.800 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation

isc N-Channel MOSFET Transistor

DESCRITION ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies, UPS,AC and DC motor controls,relay and solenoid drivers. FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements

400 Volt, 1.8 Ohm HEXFET TO-220AB Plastic Package

400 Volt, 1.8 Ohm HEXFET TO-220AB Plastic Package The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well suited for applications

N-Channel Power MOSFETs

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3.3A, 400V, 1.800 Ohm, N-Channel Power MOSFET

Power MOSFET

HEXFET Power MOSFET

SEMICONDUCTORS

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N-channel enhancement mode power mos transistors

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HEXFET Power MOSFET

Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET MOSFETs are well known fo

HEXFET짰 Power MOSFET

Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET MOSFETs are well known fo

Generation V Technology

Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET MOSFETs are well known fo

- 30V P - Channel Enhancement Mode MOSFET

General Description: The IRF7204 is the single P-Channel logic enhancement mode power field effect transistors to provide excellent RDS(on), low gate charge and low gate resistance. It’s up to -30V operation voltage is well suited in switching mode power supply, SMPS, notebook computer power m

Power MOSFET(Vdss=-20V, Rds(on)=0.060ohm, Id=-5.3A)

Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for

HEXFET짰 Power MOSFET

Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

- 30V P - Channel Enhancement Mode MOSFET

Features: RDS(ON)

HEXFET Power MOSFET

Features • Adavanced Process Technology • Ultra Low On-Resistance • P-Channel MOSFET • Surface Mount • Dynamic dv/dt Rating • Fast Switching

HEXFET Power MOSFET

Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for

P-Channel MOSFET

Features • Adavanced Process Technology • Ultra Low On-Resistance • P-Channel MOSFET • Surface Mount • Dynamic dv/dt Rating • Fast Switching

Adavanced Process Technology

Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

HEXFET Power MOSFET

Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

Adavanced Process Technology

Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

HEXFET Power MOSFET

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn

Generation 5 Technology

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn

HEXFET짰 Power MOSFET

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn

Generation 5 Technology

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn

P-channel Enhancement Mode Power MOSFET

Features  VDS= -20V, ID= -13A RDS(ON)

Advanced Power MOSFET (400V, 1.8ohm, 3.3A)

Advanced Power MOSFET (400V, 1.8ohm, 3.3A) FEATURES ♦Avalanche Rugged Technology ♦Rugged Gate Oxide Technology ♦Lower Input Capacitance ♦Improved Gate Charge ♦Extended Safe Operating Area ♦Lower Leakage Current: 10µA (Max.) @ VDS= 400V ♦Lower RDS(ON): 1.408Ω(Typ.)

400V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dv/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datashee

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation

Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dv/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datashee

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provi

Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dv/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datashee

HEXFET POWER MOSFET (VDSS = 400V , RDS(on) = 1.8廓 , ID = 3.3A )

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Surface Mount • Available in Tape & Reel • Dynamic dV/dt Rating • Repetitive Avalanch

Ultra Low On-Resistance

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Generation V Technology

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Generation V Technology

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Generation V Technology

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Generation V Technology

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ADVANCED PROCESS TECHNOLOGY

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ADVANCED PROCESS TECHNOLOGY

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Adavanced Process Technology

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P-Channel 20-V (D-S) MOSFET

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ULTRA LOW ON RESISTANCE

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ULTRA LOW ON RESISTANCE

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Industry-standard pinout SO-8 Package

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Industry-standard pinout SO-8 Package

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P-Channel 30-V (D-S) MOSFET

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Generation 5 Technology

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N-Channel Mosfet Transistor

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isc N-Channel MOSFET Transistor

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N-channel enhancement mode power mos transistors

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Power MOSFET

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Power MOSFET

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HEXFET POWER MOSFET

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