丝印代码：IRF7204；- 30V P - Channel Enhancement Mode MOSFET

General Description: The IRF7204 is the single P-Channel logic enhancement mode power field effect transistors to provide excellent RDS(on), low gate charge and low gate resistance. It’s up to -30V operation voltage is well suited in switching mode power supply, SMPS, notebook computer power m

丝印代码：IRF7204；- 30V P - Channel Enhancement Mode MOSFET

Features: RDS(ON)

采用 SO-8 封装的 -20V 单 P 通道 HEXFET 功率 MOSFET

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度\n• P 通道MOSFET;

Power MOSFET(Vdss=-20V, Rds(on)=0.060ohm, Id=-5.3A)

Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for

HEXFET짰 Power MOSFET

Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

ADVANCED PROCESS TECHNOLOGY

文件：249.27 Kbytes Page：9 Pages

ADVANCED PROCESS TECHNOLOGY

文件：249.27 Kbytes Page：9 Pages

Adavanced Process Technology

文件：249.27 Kbytes Page：9 Pages

P-Channel 20-V (D-S) MOSFET

文件：2.01837 Mbytes Page：9 Pages

HIGH DENSITY FIRST-IN FIRST-OUT(FIFO) 4096 x 9-BIT CMOS MEMORY

CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9

DESCRIPTION: The IDT7203/7204/7205/7206/7207/7208 are dual-port memory buffers with internal pointers that load and empty data on a first-in/first-out basis. The device uses Full and Empty flags to prevent data overflow and underflow and expansion logic to allow for unlimited expansion capability

ETHERNET DC/DC CONVERTERS

[Valor Electronics, Inc.]

2,4,6 OR 8-CHANNEL, 5-VOLT, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER