Power MOSFET(Vdss=-20V, Rds(on)=0.060ohm, Id=-5.3A)

Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for

- 30V P - Channel Enhancement Mode MOSFET

General Description: The IRF7204 is the single P-Channel logic enhancement mode power field effect transistors to provide excellent RDS(on), low gate charge and low gate resistance. It’s up to -30V operation voltage is well suited in switching mode power supply, SMPS, notebook computer power m

采用 SO-8 封装的 -20V 单 P 通道 HEXFET 功率 MOSFET

HEXFET짰 Power MOSFET

Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

- 30V P - Channel Enhancement Mode MOSFET

Features: RDS(ON)

ADVANCED PROCESS TECHNOLOGY

文件：249.27 Kbytes Page：9 Pages

ADVANCED PROCESS TECHNOLOGY

文件：249.27 Kbytes Page：9 Pages

P-Channel 20-V (D-S) MOSFET

文件：2.01837 Mbytes Page：9 Pages

Adavanced Process Technology

文件：249.27 Kbytes Page：9 Pages

PCI 2-Port RS-422, RS-485 Serial Interface

Features • Compliant with RoHS and WEEE directives • Each port individually configurable for RS-422 or RS-485 • 16C850 buffered UARTs with 128-byte FIFOs • Data rates to 460.8K bps • Automatic RS-485 enable/disable • Two DB-9M connectors

HIGH DENSITY FIRST-IN FIRST-OUT(FIFO) 4096 x 9-BIT CMOS MEMORY

7000 SERIES/HIGH RELIABILITY REED RELAYS

文件：1.39554 Mbytes Page：4 Pages

61-CHANNEL BUFFER FOR TFT LCD

文件：321.87 Kbytes Page：12 Pages

100/1000 Base T Gigabit Quad Port Transformer

文件：454.81 Kbytes Page：1 Pages