HEXFET Power MOSFET

Features • Adavanced Process Technology • Ultra Low On-Resistance • P-Channel MOSFET • Surface Mount • Dynamic dv/dt Rating • Fast Switching

HEXFET Power MOSFET

Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for

P-Channel MOSFET

Features • Adavanced Process Technology • Ultra Low On-Resistance • P-Channel MOSFET • Surface Mount • Dynamic dv/dt Rating • Fast Switching

采用 SO-8 封装的 IR MOSFET -30 V

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度\n• P 通道MOSFET;

HEXFET Power MOSFET

Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

Adavanced Process Technology

Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

-30V 单个 P 通道 HEXFET Power MOSFET, 采用 SO-8 封装

\n优势:\n• 工业标准引出线 SO-8 封装\n• 与现有表面封装技术兼容\n• 符合 RoHS ， 无卤素\n• 符合MSL1，工业认证;

Adavanced Process Technology

Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

ULTRA LOW ON RESISTANCE

文件：278.95 Kbytes Page：9 Pages

ULTRA LOW ON RESISTANCE

文件：278.95 Kbytes Page：9 Pages

Industry-standard pinout SO-8 Package

文件：279.5 Kbytes Page：9 Pages

Industry-standard pinout SO-8 Package

文件：279.5 Kbytes Page：9 Pages

P-Channel 30-V (D-S) MOSFET

文件：1.08239 Mbytes Page：8 Pages

High Ouput Power Doubler 750 MHz CATV Amplifier

High Ouput Power Doubler 750 MHz CATV Amplifier • Specified for 77 and 110–Channel Performance • Broadband Power Gain - @ f = 40–750 MHz Gp = 20.2 dB (Typ) • Broadband Noise Figure NF = 6.2 dB (Typ) @ 750 MHz • All Gold Metallization • 7 GHz fT Ion–Implanted Transistors • Composite Triple Be

High Ouput Power Doubler 750 MHz CATV Amplifier

Designed specifically for 750 MHz CATV applications. Features ionimplanted, arsenic emitter transistors with an all gold metallization system. • Supply Voltage = 24 Vdc • 6th Generation Die Technology • Specified for 110 Channel Performance • Broadband Power Gain @ f = 50 MHz Gp =

High Ouput Power Doubler 750 MHz CATV Amplifier

High Ouput Power Doubler 750 MHz CATV Amplifier • Specified for 77 and 110–Channel Performance • Broadband Power Gain - @ f = 40–750 MHz Gp = 20.2 dB (Typ) • Broadband Noise Figure NF = 6.2 dB (Typ) @ 750 MHz • All Gold Metallization • 7 GHz fT Ion–Implanted Transistors • Composite Triple Be

MPEG-2 systems demultiplexer

GENERAL DESCRIPTION This document specifies the MPEG-2 systems demultiplexer IC, SAA7205H, for use in MPEG-2 based digital TV receivers, possibly incorporating conditional access. Such receivers are to be implemented in, for instance, a Digital Video Broadcasting (DVB) set-top box, or Integrated

MPEG-2 systems demultiplexer

GENERAL DESCRIPTION This document specifies the MPEG-2 systems demultiplexer IC, SAA7205H, for use in MPEG-2 based digital TV receivers, possibly incorporating conditional access. Such receivers are to be implemented in, for instance, a Digital Video Broadcasting (DVB) set-top box, or Integrated