丝印代码：IRF7204；- 30V P - Channel Enhancement Mode MOSFET

Features: RDS(ON)

Adavanced Process Technology

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P-Channel 20-V (D-S) MOSFET

文件：2.01837 Mbytes Page：9 Pages

Power MOSFET(Vdss=-20V, Rds(on)=0.060ohm, Id=-5.3A)

Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for

HIGH DENSITY FIRST-IN FIRST-OUT(FIFO) 4096 x 9-BIT CMOS MEMORY

CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9

DESCRIPTION: The IDT7203/7204/7205/7206/7207/7208 are dual-port memory buffers with internal pointers that load and empty data on a first-in/first-out basis. The device uses Full and Empty flags to prevent data overflow and underflow and expansion logic to allow for unlimited expansion capability

ETHERNET DC/DC CONVERTERS

[Valor Electronics, Inc.]

2,4,6 OR 8-CHANNEL, 5-VOLT, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER