型号 功能描述 生产厂家&企业 LOGO 操作
IRF7207

HEXFET Power MOSFET

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn

IRF

IRF7207

Generation 5 Technology

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn

IRF

HEXFET짰 Power MOSFET

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn

IRF

Generation 5 Technology

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn

IRF

P-channel Enhancement Mode Power MOSFET

Features  VDS= -20V, ID= -13A RDS(ON)

Bychip

百域芯

Generation 5 Technology

文件:177.2 Kbytes Page:7 Pages

IRF

T-1 Subminiature Lamps

T-1 Subminiature Lamps T-1 Subminiature Short Type Lamps

GILWAY

BNC (M) 50 廓

文件:227.77 Kbytes Page:2 Pages

POMONA

Pomona Electronics

Miniature Rocker Lever Handle Switches

文件:1.58957 Mbytes Page:22 Pages

CK-COMPONENTS

7000 Series Miniature Toggle Switches

文件:1.03503 Mbytes Page:14 Pages

CK-COMPONENTS

1uA Ultra-Low Quiescent Current, 0.6A Output Synchronous BUCK

文件:568.41 Kbytes Page:8 Pages

ACE

IRF7207产品属性

  • 类型

    描述

  • 型号

    IRF7207

  • 功能描述

    MOSFET P-CH 20V 5.4A 8-SOIC

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    HEXFET®

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • MOSFET N 通道,金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大)

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

更新时间:2025-8-17 10:12:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
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IR
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IR
2021+
SO-8
9000
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IR
23+
SOP-8
4560
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SOP8
68500
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SOP8
2960
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