您好,欢迎来到114ic资料网！

芯片资料
  • 芯片资料
  • 库存查询
  • 行业新闻
  • 生产厂家
  • 替换型号
  • 晶体管

位置：首页 > IC中文资料第895页 > IRF610

IRF610价格

参考价格：￥9.8233

型号：IRF610 品牌：Vishay 备注：这里有IRF610多少钱，2025年最近7天走势，今日出价，今日竞价，IRF610批发/采购报价，IRF610行情走势销售排行榜，IRF610报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IRF610

N-ChannelPowerMOSFETs,3.5A,150-200V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. ●LOWRDS(on) ●VQSRatedat±20V ●SiliconG

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
IRF610

3.3A,200V,1.500Ohm,N-ChannelPowerMOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

Intersil

Intersil Corporation

Intersil
IRF610

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
IRF610

N-ChannelPowerMOSFETs3.5A,150-200V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. ●LOWRDS(on) ●VQSRatedat±20V ●SiliconG

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
IRF610

iscN-ChannelMOSFETTransistor

•DESCRITION •Designedespeciallyforhighvoltage,highspeedapplications, suchasoff-lineswitchingpowersupplies,UPS,ACandDC motorcontrols,relayandsolenoiddrivers. •FEATURES •LowRDS(on) •VGSRatedat±20V •SiliconGateforFastSwitchingSpeed •Rugged •LowDrive

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
IRF610

N-ChannelPowerMOSFETs3.5A,150-200V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. ●LOWRDS(on) ●VQSRatedat±20V ●SiliconG

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
IRF610

PowerMOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare RoH

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
IRF610

SEMICONDUCTORS

文件：2.43533 Mbytes Page：31 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

etc2
IRF610

PowerMOSFET

文件：282.85 Kbytes Page：9 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
IRF610

N-ChannelPowerMosfets

文件：344.15 Kbytes Page：5 Pages

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

ARTSCHIP
IRF610_V01

PowerMOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare RoH

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
IRF6100

HEXFETPowerMOSFET

Description Truechip-scalepackagingisavailablefromInternationalRectifier.Throughtheuseofadvancedprocessingtechniques,andauniquepackagingconcept,extremelylowon-resistanceandthehighestpowerdensitiesintheindustryhavebeenmadeavailableforbatteryandloadmanageme

IRF

International Rectifier

IRF
IRF6100PBF

HEXFETPowerMOSFET

Description Truechip-scalepackagingisavailablefromInternationalRectifier.Throughtheuseofadvancedprocessingtechniques,andauniquepackagingconcept,extremelylowon-resistanceandthehighestpowerdensitiesintheindustryhavebeenmadeavailableforbatteryandloadmanagemen

IRF

International Rectifier

IRF
IRF610-613

N-ChannelPowerMOSFETs,3.5A,150-200V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. ●LOWRDS(on) ●VQSRatedat±20V ●SiliconG

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
IRF610A

iscN-ChannelMOSFETTransistor

DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES •LowRDS(on)=1.25Ω(TYP) •LowerInputCapacitance •ImprovedGateCharge •ExtendedSafeOperatingArea •RuggedGateOxideTechnology

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
IRF610A

AdvancedPowerMOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10μA(Max.)@VDS=200V ■LowRDS(ON):1.169Ω(Typ.)

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
IRF610B

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Features •3.3A,200V,RDS(on)=1.5Ω@VGS=10V •Lowgatecharge(typical7.2nC) •LowCrss(typical6.8pF) •Fastswitch

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
IRF610L

Surfacemount

DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itpro

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
IRF610L

PowerMOSFET

FEATURES •Surfacemount •Availableintapeandreel •DynamicdV/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatashee

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
IRF610PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
IRF610S

Surfacemount

DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itpro

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
IRF610S

HEXFETPowerMOSFET

DESCRIPTION ThirdGenerationMOSFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSMD-220isasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.It

IRF

International Rectifier

IRF
IRF610S

PowerMOSFET

FEATURES •Surfacemount •Availableintapeandreel •DynamicdV/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatashee

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
IRF610S_V01

PowerMOSFET

FEATURES •Surfacemount •Availableintapeandreel •DynamicdV/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatashee

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
IRF610_17

PowerMOSFET

文件：282.85 Kbytes Page：9 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
IRF610LPBFA

PowerMOSFET

文件：237.79 Kbytes Page：10 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
IRF610PBF

HEXFET짰PowerMOSFET

文件：3.56538 Mbytes Page：7 Pages

IRF

International Rectifier

IRF
IRF610PBF

N-Channel200V(D-S)MOSFET

文件：2.53698 Mbytes Page：9 Pages

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体（台湾）有限公司

VBSEMI
IRF610SPBF

HEXFET짰PowerMOSFET

文件：1.87143 Mbytes Page：9 Pages

IRF

International Rectifier

IRF
IRF610SPBF

PowerMOSFET

文件：237.79 Kbytes Page：10 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
IRF610STRLPBFA

PowerMOSFET

文件：237.79 Kbytes Page：10 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
IRF610STRRPBFA

PowerMOSFET

文件：237.79 Kbytes Page：10 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
610

Compact,PortableIP67MilitaryFastEthernetSwitch

PRODUCTDESCRIPTION EthernetisbecomingthestandardforIP-based componentsinawiderangeofmilitaryandcommercial land,sea,andairapplications.Whenbuilding communicationswheredataprioritizationisnota concernandtheamountoftrafficislow,unmanaged, FastEthernetswitche

ENERCON

Enercon Technologies Europe AG

ENERCON
610A

PulseEncapsulatedP.C.BoardMount

Features Theseferritecoredtransformersarefullyencapsulatedinahighgradeblackmoldedcase withaUL94V-Orating. Unitsareintendedforwidebandandpulseapplicationsincludingthyristor/triacfiring circuits. Peakpulsevoltageratingmaximumof250V. Insulationtestedto1,000

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

HAMMOND
610B

PulseEncapsulatedP.C.BoardMount

Features Theseferritecoredtransformersarefullyencapsulatedinahighgradeblackmoldedcase withaUL94V-Orating. Unitsareintendedforwidebandandpulseapplicationsincludingthyristor/triacfiring circuits. Peakpulsevoltageratingmaximumof250V. Insulationtestedto1,000

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

HAMMOND
610

횠6.35mmmountingBlackanodisedaluminiumhousing

文件：411.03 Kbytes Page：4 Pages

MARL

Marl International Ltd

MARL
610

LowProfile

文件：146.02 Kbytes Page：2 Pages

OSCILENT

Oscilent Corporation

OSCILENT

IRF610产品属性

  • 类型

    描述

  • 型号

    IRF610

  • 功能描述

    MOSFET N-Chan 200V 3.3 Amp

  • RoHS

    否

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS（导通）

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

IRF610供应商更多...

更新时间：2025-7-27 10:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市莱克讯科技有限公司
IRF610
IR
1923+
TO-220
6896
原装进口现货库存专业工厂研究所配单供货
询价
深圳市威尔健半导体有限公司
IRF610
HARRIS/哈里斯
23+
TO
50000
全新原装正品现货,支持订货
询价
深圳市星宇佳科技有限公司
IRF610
INFINEON/英飞凌
96+
TO-220
10
原装进口无铅现货
询价
深圳市赛尔通科技有限公司
IRF610PBF
VISHAY
23+
TO-220
65400
询价
深圳市中联芯电子有限公司
IRF610PBF
VISHAY/威世
24+
TO-220
5715
只做原装 有挂有货 假一罚十
询价
深圳市星佑电子有限公司
IRF610
IR
06+
TO-220
8000
原装
询价
深圳市正迈科技有限公司
IRF610
IR
23+
NA
10658
专业电子元器件供应链正迈科技特价代理特价，原装元器件供应，支持开发样品
询价
深圳市高捷芯城科技有限公司
IRF610STRLPBF
VISHAY(威世)
24+
TO-263-3
8357
支持大陆交货,美金交易。原装现货库存。
询价
深圳市华高宇电子有限公司
IRF610PBF
VISHAY
21+
49950
TO-220-3
询价
深圳市斌能达电子科技有限公司
IRF610
IR
24+
TO-220
2000
全新原装深圳仓库现货有单必成
询价

IRF610芯片相关品牌

  • ABLIC
  • AMD
  • COILCRAFT
  • Good-Ark
  • GREATECS
  • ILLINOISCAPACITOR
  • Infineon
  • KEMET
  • MOLEX9
  • MSYSTEM
  • SSDI
  • WTE

IRF610规格书下载地址

IRF610参数引脚图相关

IRF610数据表相关新闻

DdatasheetPDF页码索引

新数据|IC资料索引|IC关键词|IC库存|IC中文资料|关于我们|联系我们

Copyright © 2003-2025 www.114ic.cn All Rights Reserved 网站备案: 粤ICP备05011613号 粤公网安备 44030402000933号

声明：本站所有资料均来自互联网及网友提供，仅供学习和研究使用，无任何商业目的，版权归原作如有侵权请联系QQ：303638005，本站马上更正

字母索引：ABCDEFGHIJKLMNOPQRSTUVWXYZ0123456789

深圳市市场监督管理局企业主体身份公示