IRF610价格

参考价格:¥9.8233

型号:IRF610 品牌:Vishay 备注:这里有IRF610多少钱,2024年最近7天走势,今日出价,今日竞价,IRF610批发/采购报价,IRF610行情走势销售排行榜,IRF610报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IRF610

N-ChannelPowerMOSFETs,3.5A,150-200V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. ●LOWRDS(on) ●VQSRatedat±20V ●SiliconG

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
IRF610

3.3A,200V,1.500Ohm,N-ChannelPowerMOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil
IRF610

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati

VishayVishay Siliconix

威世科技

Vishay
IRF610

iscN-ChannelMOSFETTransistor

•DESCRITION •Designedespeciallyforhighvoltage,highspeedapplications, suchasoff-lineswitchingpowersupplies,UPS,ACandDC motorcontrols,relayandsolenoiddrivers. •FEATURES •LowRDS(on) •VGSRatedat±20V •SiliconGateforFastSwitchingSpeed •Rugged •LowDrive

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
IRF610

N-ChannelPowerMOSFETs3.5A,150-200V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. ●LOWRDS(on) ●VQSRatedat±20V ●SiliconG

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
IRF610

N-ChannelPowerMOSFETs3.5A,150-200V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. ●LOWRDS(on) ●VQSRatedat±20V ●SiliconG

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
IRF610

PowerMOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare RoH

VishayVishay Siliconix

威世科技

Vishay
IRF610

SEMICONDUCTORS

文件:2.43533 Mbytes Page:31 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2
IRF610

PowerMOSFET

文件:282.85 Kbytes Page:9 Pages

VishayVishay Siliconix

威世科技

Vishay
IRF610

N-ChannelPowerMosfets

文件:344.15 Kbytes Page:5 Pages

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

ARTSCHIP

PowerMOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare RoH

VishayVishay Siliconix

威世科技

Vishay

HEXFETPowerMOSFET

Description Truechip-scalepackagingisavailablefromInternationalRectifier.Throughtheuseofadvancedprocessingtechniques,andauniquepackagingconcept,extremelylowon-resistanceandthehighestpowerdensitiesintheindustryhavebeenmadeavailableforbatteryandloadmanageme

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

HEXFETPowerMOSFET

Description Truechip-scalepackagingisavailablefromInternationalRectifier.Throughtheuseofadvancedprocessingtechniques,andauniquepackagingconcept,extremelylowon-resistanceandthehighestpowerdensitiesintheindustryhavebeenmadeavailableforbatteryandloadmanagemen

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

N-ChannelPowerMOSFETs,3.5A,150-200V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. ●LOWRDS(on) ●VQSRatedat±20V ●SiliconG

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

AdvancedPowerMOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10μA(Max.)@VDS=200V ■LowRDS(ON):1.169Ω(Typ.)

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

iscN-ChannelMOSFETTransistor

DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES •LowRDS(on)=1.25Ω(TYP) •LowerInputCapacitance •ImprovedGateCharge •ExtendedSafeOperatingArea •RuggedGateOxideTechnology

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Features •3.3A,200V,RDS(on)=1.5Ω@VGS=10V •Lowgatecharge(typical7.2nC) •LowCrss(typical6.8pF) •Fastswitch

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

Surfacemount

DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itpro

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

FEATURES •Surfacemount •Availableintapeandreel •DynamicdV/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatashee

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati

VishayVishay Siliconix

威世科技

Vishay

HEXFETPowerMOSFET

DESCRIPTION ThirdGenerationMOSFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSMD-220isasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.It

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

Surfacemount

DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itpro

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

FEATURES •Surfacemount •Availableintapeandreel •DynamicdV/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatashee

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

FEATURES •Surfacemount •Availableintapeandreel •DynamicdV/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatashee

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

文件:282.85 Kbytes Page:9 Pages

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

文件:237.79 Kbytes Page:10 Pages

VishayVishay Siliconix

威世科技

Vishay

N-Channel200V(D-S)MOSFET

文件:2.53698 Mbytes Page:9 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

HEXFET짰PowerMOSFET

文件:3.56538 Mbytes Page:7 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

HEXFET짰PowerMOSFET

文件:1.87143 Mbytes Page:9 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

PowerMOSFET

文件:237.79 Kbytes Page:10 Pages

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

文件:237.79 Kbytes Page:10 Pages

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

文件:237.79 Kbytes Page:10 Pages

VishayVishay Siliconix

威世科技

Vishay

Compact,PortableIP67MilitaryFastEthernetSwitch

PRODUCTDESCRIPTION EthernetisbecomingthestandardforIP-based componentsinawiderangeofmilitaryandcommercial land,sea,andairapplications.Whenbuilding communicationswheredataprioritizationisnota concernandtheamountoftrafficislow,unmanaged, FastEthernetswitche

ENERCON

Enercon Technologies Europe AG

ENERCON

PulseEncapsulatedP.C.BoardMount

Features Theseferritecoredtransformersarefullyencapsulatedinahighgradeblackmoldedcase withaUL94V-Orating. Unitsareintendedforwidebandandpulseapplicationsincludingthyristor/triacfiring circuits. Peakpulsevoltageratingmaximumof250V. Insulationtestedto1,000

HAMMOND

Hammond Manufacturing Ltd.

HAMMOND

횠6.35mmmountingBlackanodisedaluminiumhousing

文件:411.03 Kbytes Page:4 Pages

MARL

Marl International Ltd

MARL

LowProfile

文件:146.02 Kbytes Page:2 Pages

OSCILENT

Oscilent Corporation

OSCILENT

AluminumCapacitors125°C,Non-Polar,Miniature

文件:71.27 Kbytes Page:3 Pages

VishayVishay Siliconix

威世科技

Vishay

IRF610产品属性

  • 类型

    描述

  • 型号

    IRF610

  • 功能描述

    MOSFET N-Chan 200V 3.3 Amp

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2024-4-25 14:36:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VISHAY/威世
24+
TO-220
5715
只做原装 有挂有货 假一罚十
HAR
23+
原厂封装
9888
专做原装正品,假一罚百!
IR
800
正品原装--自家现货-实单可谈
VISHAY/威世
21+
Tube
22000
只做原装,假一罚十
IR
94
94
原装正品现货供应
IR
06+
TO-220
8000
原装
VISHAY/威世
2138+
TO-220
6900
IR
22+
TO-220
360000
进口原装房间现货实库实数
IR
BGA4
7906200
NA
19+
74578
原厂代理渠道,每一颗芯片都可追溯原厂;

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