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IRF610价格
参考价格:¥9.8233
型号:IRF610 品牌:Vishay 备注:这里有IRF610多少钱,2024年最近7天走势,今日出价,今日竞价,IRF610批发/采购报价,IRF610行情走势销售排行榜,IRF610报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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IRF610 | N-ChannelPowerMOSFETs,3.5A,150-200V Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. ●LOWRDS(on) ●VQSRatedat±20V ●SiliconG | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | ||
IRF610 | 3.3A,200V,1.500Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | ||
IRF610 | PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati | VishayVishay Siliconix 威世科技 | ||
IRF610 | iscN-ChannelMOSFETTransistor •DESCRITION •Designedespeciallyforhighvoltage,highspeedapplications, suchasoff-lineswitchingpowersupplies,UPS,ACandDC motorcontrols,relayandsolenoiddrivers. •FEATURES •LowRDS(on) •VGSRatedat±20V •SiliconGateforFastSwitchingSpeed •Rugged •LowDrive | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ||
IRF610 | N-ChannelPowerMOSFETs3.5A,150-200V Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. ●LOWRDS(on) ●VQSRatedat±20V ●SiliconG | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | ||
IRF610 | N-ChannelPowerMOSFETs3.5A,150-200V Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. ●LOWRDS(on) ●VQSRatedat±20V ●SiliconG | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | ||
IRF610 | PowerMOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare RoH | VishayVishay Siliconix 威世科技 | ||
IRF610 | SEMICONDUCTORS 文件:2.43533 Mbytes Page:31 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 | ||
IRF610 | PowerMOSFET 文件:282.85 Kbytes Page:9 Pages | VishayVishay Siliconix 威世科技 | ||
IRF610 | N-ChannelPowerMosfets 文件:344.15 Kbytes Page:5 Pages | ARTSCHIP ARTSCHIP ELECTRONICS CO.,LMITED. | ||
PowerMOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare RoH | VishayVishay Siliconix 威世科技 | |||
HEXFETPowerMOSFET Description Truechip-scalepackagingisavailablefromInternationalRectifier.Throughtheuseofadvancedprocessingtechniques,andauniquepackagingconcept,extremelylowon-resistanceandthehighestpowerdensitiesintheindustryhavebeenmadeavailableforbatteryandloadmanageme | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFETPowerMOSFET Description Truechip-scalepackagingisavailablefromInternationalRectifier.Throughtheuseofadvancedprocessingtechniques,andauniquepackagingconcept,extremelylowon-resistanceandthehighestpowerdensitiesintheindustryhavebeenmadeavailableforbatteryandloadmanagemen | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
N-ChannelPowerMOSFETs,3.5A,150-200V Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. ●LOWRDS(on) ●VQSRatedat±20V ●SiliconG | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
AdvancedPowerMOSFET FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10μA(Max.)@VDS=200V ■LowRDS(ON):1.169Ω(Typ.) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
iscN-ChannelMOSFETTransistor DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES •LowRDS(on)=1.25Ω(TYP) •LowerInputCapacitance •ImprovedGateCharge •ExtendedSafeOperatingArea •RuggedGateOxideTechnology | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
200VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Features •3.3A,200V,RDS(on)=1.5Ω@VGS=10V •Lowgatecharge(typical7.2nC) •LowCrss(typical6.8pF) •Fastswitch | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
Surfacemount DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itpro | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET FEATURES •Surfacemount •Availableintapeandreel •DynamicdV/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatashee | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati | VishayVishay Siliconix 威世科技 | |||
HEXFETPowerMOSFET DESCRIPTION ThirdGenerationMOSFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSMD-220isasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.It | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
Surfacemount DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itpro | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET FEATURES •Surfacemount •Availableintapeandreel •DynamicdV/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatashee | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET FEATURES •Surfacemount •Availableintapeandreel •DynamicdV/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatashee | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET 文件:282.85 Kbytes Page:9 Pages | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET 文件:237.79 Kbytes Page:10 Pages | VishayVishay Siliconix 威世科技 | |||
N-Channel200V(D-S)MOSFET 文件:2.53698 Mbytes Page:9 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
HEXFET짰PowerMOSFET 文件:3.56538 Mbytes Page:7 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFET짰PowerMOSFET 文件:1.87143 Mbytes Page:9 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
PowerMOSFET 文件:237.79 Kbytes Page:10 Pages | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET 文件:237.79 Kbytes Page:10 Pages | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET 文件:237.79 Kbytes Page:10 Pages | VishayVishay Siliconix 威世科技 | |||
Compact,PortableIP67MilitaryFastEthernetSwitch PRODUCTDESCRIPTION EthernetisbecomingthestandardforIP-based componentsinawiderangeofmilitaryandcommercial land,sea,andairapplications.Whenbuilding communicationswheredataprioritizationisnota concernandtheamountoftrafficislow,unmanaged, FastEthernetswitche | ENERCON Enercon Technologies Europe AG | |||
PulseEncapsulatedP.C.BoardMount Features Theseferritecoredtransformersarefullyencapsulatedinahighgradeblackmoldedcase withaUL94V-Orating. Unitsareintendedforwidebandandpulseapplicationsincludingthyristor/triacfiring circuits. Peakpulsevoltageratingmaximumof250V. Insulationtestedto1,000 | HAMMOND Hammond Manufacturing Ltd. | |||
횠6.35mmmountingBlackanodisedaluminiumhousing 文件:411.03 Kbytes Page:4 Pages | MARL Marl International Ltd | |||
LowProfile 文件:146.02 Kbytes Page:2 Pages | OSCILENT Oscilent Corporation | |||
AluminumCapacitors125°C,Non-Polar,Miniature 文件:71.27 Kbytes Page:3 Pages | VishayVishay Siliconix 威世科技 |
IRF610产品属性
- 类型
描述
- 型号
IRF610
- 功能描述
MOSFET N-Chan 200V 3.3 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
VISHAY/威世 |
24+ |
TO-220 |
5715 |
只做原装 有挂有货 假一罚十 |
|||
HAR |
23+ |
原厂封装 |
9888 |
专做原装正品,假一罚百! |
|||
IR |
800 |
正品原装--自家现货-实单可谈 |
|||||
VISHAY/威世 |
21+ |
Tube |
22000 |
只做原装,假一罚十 |
|||
IR |
94 |
94 |
原装正品现货供应 |
||||
IR |
06+ |
TO-220 |
8000 |
原装 |
|||
VISHAY/威世 |
2138+ |
TO-220 |
6900 |
||||
IR |
22+ |
TO-220 |
360000 |
进口原装房间现货实库实数 |
|||
IR |
BGA4 |
7906200 |
|||||
NA |
19+ |
74578 |
原厂代理渠道,每一颗芯片都可追溯原厂; |
IRF610规格书下载地址
IRF610参数引脚图相关
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